Shenglei Zhao

1.7k total citations
103 papers, 1.3k citations indexed

About

Shenglei Zhao is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Shenglei Zhao has authored 103 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 85 papers in Condensed Matter Physics, 69 papers in Electrical and Electronic Engineering and 50 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Shenglei Zhao's work include GaN-based semiconductor devices and materials (85 papers), Ga2O3 and related materials (50 papers) and Semiconductor materials and devices (38 papers). Shenglei Zhao is often cited by papers focused on GaN-based semiconductor devices and materials (85 papers), Ga2O3 and related materials (50 papers) and Semiconductor materials and devices (38 papers). Shenglei Zhao collaborates with scholars based in China, Macao and United Kingdom. Shenglei Zhao's co-authors include Jincheng Zhang, Yue Hao, Yue Hao, Hong Zhou, Chunfu Zhang, Yachao Zhang, Qian Feng, Xiaohua Ma, Jing Ning and Zhaoke Bian and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Industrial Electronics and IEEE Transactions on Power Electronics.

In The Last Decade

Shenglei Zhao

94 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shenglei Zhao China 19 822 811 707 458 201 103 1.3k
Jossue Montes United States 19 557 0.7× 556 0.7× 444 0.6× 270 0.6× 161 0.8× 34 850
Xuanwu Kang China 28 1.3k 1.6× 1.5k 1.9× 1.1k 1.6× 718 1.6× 308 1.5× 85 2.1k
Dong‐Seok Kim South Korea 16 639 0.8× 688 0.8× 392 0.6× 287 0.6× 146 0.7× 87 1.0k
Austin Hickman United States 13 508 0.6× 616 0.8× 640 0.9× 564 1.2× 116 0.6× 22 1.1k
Yimen Zhang China 17 1.3k 1.5× 171 0.2× 379 0.5× 476 1.0× 410 2.0× 258 1.6k
Tamara Isaacs‐Smith United States 19 1.0k 1.3× 159 0.2× 259 0.4× 246 0.5× 305 1.5× 81 1.2k
Meng Qi United States 11 769 0.9× 824 1.0× 488 0.7× 251 0.5× 182 0.9× 33 1.1k
Shaowen Han China 12 530 0.6× 611 0.8× 290 0.4× 118 0.3× 146 0.7× 19 704
Kanglin Xiong United States 15 359 0.4× 298 0.4× 170 0.2× 254 0.6× 191 1.0× 42 652
Jinyan Wang China 22 1.1k 1.4× 1.3k 1.6× 696 1.0× 265 0.6× 270 1.3× 116 1.5k

Countries citing papers authored by Shenglei Zhao

Since Specialization
Citations

This map shows the geographic impact of Shenglei Zhao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shenglei Zhao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shenglei Zhao more than expected).

Fields of papers citing papers by Shenglei Zhao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shenglei Zhao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shenglei Zhao. The network helps show where Shenglei Zhao may publish in the future.

Co-authorship network of co-authors of Shenglei Zhao

This figure shows the co-authorship network connecting the top 25 collaborators of Shenglei Zhao. A scholar is included among the top collaborators of Shenglei Zhao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shenglei Zhao. Shenglei Zhao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Song, Xiufeng, Shenglei Zhao, Kui Dang, et al.. (2025). 710 GHz GaN gradient doped Schottky barrier diode with high breakdown voltage. Applied Physics Letters. 126(10).
2.
3.
Zhao, Shenglei, et al.. (2025). Rock burst early warning utilizing acoustic emission and electromagnetic radiation adaptive noise reduction and multi-image feature fusion: a case study. Engineering Applications of Artificial Intelligence. 157. 111312–111312. 2 indexed citations
4.
Song, Xiufeng, Tian‐Jun Dai, Zhongxu Wang, et al.. (2024). Impact of negative gate stress on the reliability of p-GaN gate HEMT devices under dynamic switching operation. Physica Scripta. 99(12). 125607–125607.
5.
Chen, Wensuo, et al.. (2024). High performance E-mode NiO/β-Ga2O3 HJ-FET with high conduction band offset and thin recessed channel. Micro and Nanostructures. 195. 207963–207963.
6.
Chen, Wensuo, et al.. (2024). Novel superjunction Fin-based NiO/β-Ga2O3 HJFET with additional surface drift region channels for record-high performance. Microelectronics Journal. 151. 106325–106325. 2 indexed citations
7.
Liu, Y., Bochao Zhao, Yao Li, et al.. (2024). High quality heavy Sn doping β‑Ga2O3 film with high mobility grown by time division transport Metal Organic Chemical Vapor Deposition. Journal of Alloys and Compounds. 1003. 175756–175756. 4 indexed citations
8.
Zhao, Shenglei, Xiufeng Song, Xuejing Sun, et al.. (2024). Improved gate reliability of normally off p-GaN gate HEMTs with in situ SiN cap-layer. Applied Physics Letters. 125(19). 1 indexed citations
9.
10.
Tian, Xusheng, Chunfu Zhang, Shenglei Zhao, et al.. (2023). Influence of swift heavy ion irradiation on electrical characteristics of β-Ga2O3 Schottky barrier diode. Semiconductor Science and Technology. 38(3). 35018–35018. 10 indexed citations
11.
Zhao, Shenglei, Jincheng Zhang, Lin Du, et al.. (2023). Parameter Shift of Quasi-Vertical GaN-on-Si Schottky Barrier Diodes Under On-State Forward-Current (2–4 kA/cm2) Stress. IEEE Transactions on Electron Devices. 70(3). 959–962. 3 indexed citations
12.
Wu, Yinhe, Jincheng Zhang, Shenglei Zhao, et al.. (2022). Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs. Science China Information Sciences. 65(8). 9 indexed citations
13.
Wang, Chenlu, Jincheng Zhang, Shengrui Xu, et al.. (2021). Progress in state-of-the-art technologies of Ga 2 O 3 devices. Journal of Physics D Applied Physics. 54(24). 243001–243001. 133 indexed citations
14.
Wang, Haiyong, Wei Mao, Shenglei Zhao, et al.. (2021). Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain. Superlattices and Microstructures. 156. 106931–106931. 9 indexed citations
15.
Wang, Haiyong, Wei Mao, Shenglei Zhao, et al.. (2021). High-performance reverse blocking p-GaN HEMTs with recessed Schottky and p-GaN isolation blocks drain. Applied Physics Letters. 119(2). 7 indexed citations
16.
Wang, Haiyong, Wei Mao, Shenglei Zhao, et al.. (2020). 1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V. IEEE Journal of the Electron Devices Society. 9. 125–129. 16 indexed citations
17.
Chen, Jiabo, Zhaoke Bian, Zhihong Liu, et al.. (2019). High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment. Semiconductor Science and Technology. 34(11). 115019–115019. 16 indexed citations
18.
Bian, Zhaoke, Jincheng Zhang, Shenglei Zhao, et al.. (2019). Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes. Journal of Physics D Applied Physics. 53(4). 45103–45103. 9 indexed citations
19.
Zhou, Hong, Jincheng Zhang, Chunfu Zhang, et al.. (2019). A review of the most recent progresses of state-of-art gallium oxide power devices. Journal of Semiconductors. 40(1). 11803–11803. 113 indexed citations
20.
Zhang, Kai, Minhan Mi, Shenglei Zhao, et al.. (2014). Enhancement‐mode AlGaN/GaN HEMTs with thin and high Al composition barrier layers using O2 plasma implantation. physica status solidi (a). 212(5). 1081–1085. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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