Atsushi Murakoshi

559 total citations
34 papers, 349 citations indexed

About

Atsushi Murakoshi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, Atsushi Murakoshi has authored 34 papers receiving a total of 349 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 8 papers in Computational Mechanics. Recurrent topics in Atsushi Murakoshi's work include Silicon and Solar Cell Technologies (17 papers), Semiconductor materials and devices (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (16 papers). Atsushi Murakoshi is often cited by papers focused on Silicon and Solar Cell Technologies (17 papers), Semiconductor materials and devices (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (16 papers). Atsushi Murakoshi collaborates with scholars based in Japan and United States. Atsushi Murakoshi's co-authors include K. Suguro, M. Tomita, Ichiro Mizushima, Katsuya Okumura, Mariko Suzuki, T. Arikado, Takayuki Ito, Masaki Yoshioka, Masayuki Watanabe and M. Kashiwagi and has published in prestigious journals such as Applied Physics Letters, Applied Surface Science and IEEE Transactions on Electron Devices.

In The Last Decade

Atsushi Murakoshi

32 papers receiving 324 citations

Peers

Atsushi Murakoshi
Daniel F. Downey United States
S. Corcoran United States
Fulvio Mazzamuto France
R. Galloni Italy
T. D. Day United States
Nobuo Toyokura Japan
T. Barge France
Anjan Bhattacharyya United States
R. G. Mazur United States
A. Buczkowski United States
Daniel F. Downey United States
Atsushi Murakoshi
Citations per year, relative to Atsushi Murakoshi Atsushi Murakoshi (= 1×) peers Daniel F. Downey

Countries citing papers authored by Atsushi Murakoshi

Since Specialization
Citations

This map shows the geographic impact of Atsushi Murakoshi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Atsushi Murakoshi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Atsushi Murakoshi more than expected).

Fields of papers citing papers by Atsushi Murakoshi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Atsushi Murakoshi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Atsushi Murakoshi. The network helps show where Atsushi Murakoshi may publish in the future.

Co-authorship network of co-authors of Atsushi Murakoshi

This figure shows the co-authorship network connecting the top 25 collaborators of Atsushi Murakoshi. A scholar is included among the top collaborators of Atsushi Murakoshi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Atsushi Murakoshi. Atsushi Murakoshi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
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Murakoshi, Atsushi, et al.. (2014). Reduction of surface roughness and defect density by cryogenic implantation of arsenic. Japanese Journal of Applied Physics. 53(6). 66507–66507. 6 indexed citations
3.
Murakoshi, Atsushi, et al.. (2013). Improvement of P–N Junction Leakage and Reduction in Interface State Density in Transistors by Cryo Implantation Technology. Japanese Journal of Applied Physics. 52(10R). 105501–105501. 6 indexed citations
4.
Murakoshi, Atsushi, et al.. (2013). Ultralow Contact Resistivity for a Metal/p-Type Silicon Interface by High-Concentration Germanium and Boron Doping Combined with Low-Temperature Annealing. Japanese Journal of Applied Physics. 52(7R). 75802–75802. 6 indexed citations
5.
Takemura, Takato, et al.. (2007). Three-Dimensional Fabric Analysis for Anisotropic Material Using Multi-Directional Scanning Line —Application to X-ray CT Image—. MATERIALS TRANSACTIONS. 48(6). 1173–1178. 6 indexed citations
6.
Tomita, M., et al.. (2004). Ultra-shallow depth profiling with secondary ion mass spectrometry. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(1). 317–322. 15 indexed citations
7.
Tsuchiaki, Masakatsu, et al.. (2003). Systematic Investigation of Leakage Suppression by Pre-Silicide Implantation for CoSi2Formation on Shallow n+/p Si Diodes. Japanese Journal of Applied Physics. 42(Part 1, No. 4B). 1847–1854. 4 indexed citations
8.
Tomita, M., et al.. (2003). Depth profiling for ultrashallow implants using backside secondary ion mass spectrometry. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(4). 1422–1427. 6 indexed citations
9.
Yoshimi, M., Akira Nishiyama, Atsushi Murakoshi, et al.. (2002). Bandgap engineering technology for suppressing the substrate-floating-effect in 0.15 μm SOI-MOSFETs. 80–81.
10.
Tomita, M., et al.. (2002). Accurate SIMS depth profiling for ultra-shallow implants using backside SIMS. Applied Surface Science. 203-204. 264–267. 19 indexed citations
11.
12.
Suzuki, Masatoshi, et al.. (2002). Application of NRA to evaluation of boron implants in Si for shallow junctions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 190(1-4). 552–555. 2 indexed citations
13.
Ohuchi, K., K. Adachi, Atsushi Murakoshi, et al.. (2001). Ultrashallow Junction Formation for Sub-100 nm Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Controlling Transient Enhanced Diffusion. Japanese Journal of Applied Physics. 40(4S). 2701–2701. 3 indexed citations
14.
Akasaka, Y., Tomohiro Saito, Atsushi Yagishita, et al.. (2001). Surface Channel Metal Gate Complementary MOS with Light Counter Doping and Single Work Function Gate Electrode. Japanese Journal of Applied Physics. 40(4S). 2603–2603. 2 indexed citations
15.
Murakoshi, Atsushi, et al.. (2000). Cryo-Implantation Technology for Controlling Defects and impurity out diffusion. MRS Proceedings. 610. 8 indexed citations
16.
Ohuchi, K., et al.. (1999). Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 µm CMOS and Beyond. Japanese Journal of Applied Physics. 38(4S). 2238–2238. 2 indexed citations
17.
Aoyama, Tomonori, Atsushi Murakoshi, M. Koike, Shiro Takeno, & Keitaro Imai. (1998). Interfacial Layers between Si and Ru Films Deposited by Sputtering in Ar/O2 Mixture Ambient. Japanese Journal of Applied Physics. 37(2B). L242–L242. 6 indexed citations
18.
Mizushima, Ichiro, et al.. (1998). Ultra high dose boron ion implantation: super-saturation of boron and its application. Materials Chemistry and Physics. 54(1-3). 54–59. 6 indexed citations
19.
Aoyama, Tomonori, Atsushi Murakoshi, & Keitaro Imai. (1998). Ru Electrode Deposited by Sputtering in Ar/O2 Mixture Ambient. Japanese Journal of Applied Physics. 37(10R). 5701–5701. 10 indexed citations
20.
Yoshimi, M., Akira Nishiyama, Atsushi Murakoshi, et al.. (1997). Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure. IEEE Transactions on Electron Devices. 44(3). 423–430. 37 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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