R. Galloni

657 total citations
49 papers, 485 citations indexed

About

R. Galloni is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. Galloni has authored 49 papers receiving a total of 485 indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 17 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. Galloni's work include Silicon and Solar Cell Technologies (30 papers), Thin-Film Transistor Technologies (27 papers) and Semiconductor materials and interfaces (17 papers). R. Galloni is often cited by papers focused on Silicon and Solar Cell Technologies (30 papers), Thin-Film Transistor Technologies (27 papers) and Semiconductor materials and interfaces (17 papers). R. Galloni collaborates with scholars based in Italy, United States and Denmark. R. Galloni's co-authors include R. Rizzoli, C. Summonte, F. Zignani, P. Rava, Candido Fabrizio Pirri, E. Tresso, A. Desalvo, Fabrizio Giorgis, A. Nylandsted Larsen and Angela Sardo and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Renewable Energy.

In The Last Decade

R. Galloni

42 papers receiving 418 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Galloni Italy 11 460 232 141 70 24 49 485
Steven C. Shatas United States 10 400 0.9× 144 0.6× 145 1.0× 45 0.6× 39 1.6× 26 445
S. Oğuz United States 8 383 0.8× 264 1.1× 90 0.6× 25 0.4× 39 1.6× 14 412
T. J. Grasby United Kingdom 15 464 1.0× 92 0.4× 224 1.6× 37 0.5× 61 2.5× 28 512
M. Arienzo United States 12 436 0.9× 175 0.8× 190 1.3× 16 0.2× 32 1.3× 31 478
P. Warren France 13 457 1.0× 195 0.8× 270 1.9× 27 0.4× 48 2.0× 40 485
J.R. Pfiester United States 13 661 1.4× 128 0.6× 166 1.2× 23 0.3× 49 2.0× 49 673
R. Kurps Germany 12 427 0.9× 118 0.5× 202 1.4× 52 0.7× 50 2.1× 50 461
M. Omri France 10 375 0.8× 87 0.4× 259 1.8× 109 1.6× 27 1.1× 27 444
Taroh Inada Japan 12 294 0.6× 69 0.3× 159 1.1× 44 0.6× 32 1.3× 36 331
B. Bourdon France 10 344 0.7× 273 1.2× 55 0.4× 21 0.3× 15 0.6× 25 381

Countries citing papers authored by R. Galloni

Since Specialization
Citations

This map shows the geographic impact of R. Galloni's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Galloni with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Galloni more than expected).

Fields of papers citing papers by R. Galloni

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Galloni. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Galloni. The network helps show where R. Galloni may publish in the future.

Co-authorship network of co-authors of R. Galloni

This figure shows the co-authorship network connecting the top 25 collaborators of R. Galloni. A scholar is included among the top collaborators of R. Galloni based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Galloni. R. Galloni is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kerp, H., et al.. (1999). Influence of crucible material and source alloy composition on thermally evaporated indium tin oxide layers. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(2). 611–614. 1 indexed citations
2.
Rubinelli, F.A., J.K. Rath, R.E.I. Schropp, et al.. (1998). Photocarrier collection in a-SiC:H/c-Si heterojunction solar cells. Journal of Non-Crystalline Solids. 227-230. 1291–1294. 21 indexed citations
3.
Desalvo, A., Fabrizio Giorgis, Candido Fabrizio Pirri, et al.. (1997). Optoelectronic properties, structure and composition of a-SiC:H films grown in undiluted and H2 diluted silane-methane plasma. Journal of Applied Physics. 81(12). 7973–7980. 50 indexed citations
4.
Galloni, R., C. Summonte, E. Centurioni, et al.. (1997). Influence of Front Contact Material on Silicon Heterojunction Solar Cell Performance. MRS Proceedings. 467. 5 indexed citations
5.
Galloni, R.. (1996). Amorphous silicon solar cells. Renewable Energy. 8(1-4). 400–404. 14 indexed citations
6.
Rava, P., F. Demichelis, Fabrizio Giorgis, et al.. (1995). Powder Dissipation in PECVD for SiH4-CH4-H2 Gas Mixtures. Journal de Physique IV (Proceedings). 5(C5). C5–1125.
7.
Demichelis, F., Fabrizio Giorgis, Candido Fabrizio Pirri, et al.. (1995). High quality a-SiC:H films and their application in p-i-n structures for optoelectronic devices. PORTO Publications Open Repository TOrino (Politecnico di Torino). 24. 61–65.
8.
Galloni, R., R. Rizzoli, C. Summonte, et al.. (1994). Defect Distribution and Bonding Structure in High Band Gap a-Si1−xCx:H Films Deposited in H2 Dilution. MRS Proceedings. 336. 5 indexed citations
9.
Demichelis, F., Candido Fabrizio Pirri, E. Tresso, et al.. (1994). The influence of hydrogen dilution on the optoelectronic and structural properties of hydrogenated amorphous silicon carbide films. Philosophical Magazine B. 69(2). 377–386. 33 indexed citations
10.
Fonseca, Fernando Josepetti, R. Galloni, & A. Nylandsted Larsen. (1993). Electrical activation of potassium and phosphorus ions implanted in hydrogenated amorphous silicon. Philosophical Magazine B. 67(1). 107–115. 7 indexed citations
11.
Galloni, R., Y. S. Tsuo, David W. Baker, & F. Zignani. (1989). Boron doping and hydrogenation by ion implantation of a-Si:H. Journal of Non-Crystalline Solids. 114. 271–273. 3 indexed citations
12.
Cuevas, A., et al.. (1987). Comparison and optimization of different n+ dopant profiles for silicon solar cells. pvsp. 918–924. 1 indexed citations
13.
Bianconi, M., R. Galloni, & A. Mazzone. (1986). Metal grid optimization and emitter tailoring in crystalline silicon solar cells. 55(4). 271–275. 1 indexed citations
14.
Larsen, A. Nylandsted, et al.. (1986). The nature of electrically inactive antimony in silicon. Journal of Applied Physics. 59(6). 1908–1917. 64 indexed citations
15.
16.
Galloni, R. & Angela Sardo. (1983). Fully automatic apparatus for the determination of doping profiles in Si by electrical measurements and anodic stripping. Review of Scientific Instruments. 54(3). 369–373. 29 indexed citations
17.
Campisano, S. U., et al.. (1983). Decomposition kinetics of supersaturated solid solutions in ion implanted silicon. Nuclear Instruments and Methods in Physics Research. 209-210. 645–650. 2 indexed citations
18.
Bentini, G. G., L. Correrá, R. Galloni, et al.. (1982). Unanalyzed ion implantation procedure with incoherent light scanning annealing for silicon solar cells manufacturing. 759–763. 2 indexed citations
19.
Finetti, M., R. Galloni, & A. M. Mazzone. (1979). Influence of impurities and crystalline defects on electron mobility in heavily doped silicon. Journal of Applied Physics. 50(3). 1381–1385. 22 indexed citations
20.
Galloni, R., et al.. (1978). An automated system for the controlled stripping of thin silicon layers. Revue de Physique Appliquée. 13(2). 81–84. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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