Daniel F. Downey

423 total citations
23 papers, 317 citations indexed

About

Daniel F. Downey is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Daniel F. Downey has authored 23 papers receiving a total of 317 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 13 papers in Computational Mechanics and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Daniel F. Downey's work include Silicon and Solar Cell Technologies (19 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers) and Ion-surface interactions and analysis (13 papers). Daniel F. Downey is often cited by papers focused on Silicon and Solar Cell Technologies (19 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers) and Ion-surface interactions and analysis (13 papers). Daniel F. Downey collaborates with scholars based in United States and Germany. Daniel F. Downey's co-authors include K. S. Jones, E. Ishida, S. Marcus, Wilfried Lerch, W. Skorupa, T. Gebel, R.A. Yankov, C. M. Osburn, William L. Harrington and R.B. Liebert and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Thin Solid Films.

In The Last Decade

Daniel F. Downey

22 papers receiving 302 citations

Peers

Daniel F. Downey
G. Rajeswaran United States
Atsushi Murakoshi Japan
A. Lawerenz Germany
E. Ishida United States
R. G. Mazur United States
J. D. Hong South Korea
R. Galloni Italy
Anjan Bhattacharyya United States
Kentaro Nouchi Japan
D. E. W. Vandenhoudt Netherlands
G. Rajeswaran United States
Daniel F. Downey
Citations per year, relative to Daniel F. Downey Daniel F. Downey (= 1×) peers G. Rajeswaran

Countries citing papers authored by Daniel F. Downey

Since Specialization
Citations

This map shows the geographic impact of Daniel F. Downey's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel F. Downey with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel F. Downey more than expected).

Fields of papers citing papers by Daniel F. Downey

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daniel F. Downey. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel F. Downey. The network helps show where Daniel F. Downey may publish in the future.

Co-authorship network of co-authors of Daniel F. Downey

This figure shows the co-authorship network connecting the top 25 collaborators of Daniel F. Downey. A scholar is included among the top collaborators of Daniel F. Downey based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daniel F. Downey. Daniel F. Downey is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Skorupa, W., et al.. (2005). Advanced Thermal Processing of Ultrashallow Implanted Junctions Using Flash Lamp Annealing. Journal of The Electrochemical Society. 152(6). G436–G436. 69 indexed citations
2.
Skorupa, W., R.A. Yankov, W. Anwand, et al.. (2004). Ultra-shallow junctions produced by plasma doping and flash lamp annealing. Materials Science and Engineering B. 114-115. 358–361. 23 indexed citations
3.
Jones, K. S., et al.. (2001). Defect Evolution from Low Energy, Amorphizing, Germanium Implants on Silicon. MRS Proceedings. 669. 2 indexed citations
4.
Liu, Jinning, et al.. (1999). Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants. MRS Proceedings. 568. 4 indexed citations
5.
Downey, Daniel F., et al.. (1999). Effects of “fast” rapid thermal anneals on sub-keV boron and BF2 ion implants. Journal of Electronic Materials. 28(12). 1340–1344. 20 indexed citations
6.
Marcus, S., et al.. (1998). RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF2 ion implants. Journal of Electronic Materials. 27(12). 1291–1295. 6 indexed citations
7.
8.
Downey, Daniel F., et al.. (1998). Optimization of RTA parameters to produce ultra-shallow, highly activated B+, BF 2 + , and As+ ion implanted junctions. Journal of Electronic Materials. 27(12). 1296–1314. 13 indexed citations
9.
Downey, Daniel F., et al.. (1998). The Effects of Small Concentrations of Oxygen in RTP Annealing of Low Energy Boron, BF2 and Arsenic Ion Implants. MRS Proceedings. 525. 19 indexed citations
10.
Downey, Daniel F., et al.. (1998). Effect of fluorine on the diffusion of boron in ion implanted Si. Applied Physics Letters. 73(9). 1263–1265. 93 indexed citations
11.
Downey, Daniel F., et al.. (1997). Rapid Thermal Process Requirements for The Annealing of Ultra-Shallow Junctions. MRS Proceedings. 470. 5 indexed citations
12.
Downey, Daniel F., et al.. (1997). Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF2+ ion implants. Thin Solid Films. 308-309. 562–569. 13 indexed citations
13.
14.
Downey, Daniel F. & G. Angel. (1995). Metals contamination in high and medium current implanters. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 96(1-2). 68–74. 7 indexed citations
15.
Downey, Daniel F. & R.B. Liebert. (1991). Control of BF2 dissociation in high-current ion implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 55(1-4). 49–54. 4 indexed citations
16.
Downey, Daniel F., et al.. (1991). Control of wafer charging on the Varian EXTRION 1000 ion implanter. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 55(1-4). 77–81.
17.
Liebert, R.B., et al.. (1991). Control of metal contamination in the Varian Extrion 1000 ion implantation system. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 55(1-4). 71–76. 4 indexed citations
18.
Downey, Daniel F., et al.. (1987). RTP shallow junction formation of low energy boron implants into preamorphized silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 21(1-4). 505–508. 7 indexed citations
19.
Liebert, R.B., et al.. (1987). Planar channeling effects in a batch process ion implanter. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 21(1-4). 391–395. 4 indexed citations
20.
Downey, Daniel F., et al.. (1985). Wafer Temperature Rise In Rapid Thermal Processing (RTP): A Study Of Chamber Effects And Hulk Silicon Material Parameters. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 530. 97–97. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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