M. Iwase

2.9k total citations · 1 hit paper
54 papers, 2.2k citations indexed

About

M. Iwase is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Iwase has authored 54 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 15 papers in Materials Chemistry. Recurrent topics in M. Iwase's work include Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). M. Iwase is often cited by papers focused on Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). M. Iwase collaborates with scholars based in Japan and United States. M. Iwase's co-authors include Akira Toriumi, H. Tango, S. Takagi, Shinichi Takagi, Kenji Taniguchi, Hiroshi Morisaki, M. Yoshimi, Yutaka Akiyama, Satoshi Nozaki and Chihiro Hamaguchi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

M. Iwase

52 papers receiving 2.1k citations

Hit Papers

On the universality of inversion layer mobility in Si MOS... 1994 2026 2004 2015 1994 250 500 750 1000
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
    1994 1.2k citations S. Takagi, Akira Toriumi et al. IEEE Transactions on Electron Devices profile →

Peers

M. Iwase
A. Keffous Algeria
L. A. Kosyachenko Ukraine
Xufeng Wang United States
Daxing Han United States
B. Pivac Croatia
T. L. Smith United States
A. А. Lebedev Russia
B. L. Sharma India
Tomohiro Itoh Japan
V. V. Kveder Russia
A. Keffous Algeria
M. Iwase
Citations per year, relative to M. Iwase M. Iwase (= 1×) peers A. Keffous

Countries citing papers authored by M. Iwase

Since Specialization
Citations

This map shows the geographic impact of M. Iwase's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Iwase with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Iwase more than expected).

Fields of papers citing papers by M. Iwase

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Iwase. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Iwase. The network helps show where M. Iwase may publish in the future.

Co-authorship network of co-authors of M. Iwase

This figure shows the co-authorship network connecting the top 25 collaborators of M. Iwase. A scholar is included among the top collaborators of M. Iwase based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Iwase. M. Iwase is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Murakoshi, Atsushi, et al.. (2013). Improvement of P–N Junction Leakage and Reduction in Interface State Density in Transistors by Cryo Implantation Technology. Japanese Journal of Applied Physics. 52(10R). 105501–105501. 6 indexed citations
3.
Hasegawa, M., et al.. (2008). Water Vapor Pressures of LiCl-2H2O-Saturated Solutions and C2H2O4-2H2O-C2H2O4 Mixtures. High Temperature Materials and Processes. 27(1). 19–22. 2 indexed citations
4.
Mizuno, Tomohisa, M. Iwase, T. Shibata, et al.. (2002). Performance fluctuations of 0.10 μm MOSFETs-limitation of 0.1 μm ULSIs. 13–14. 8 indexed citations
5.
Hazama, H., M. Iwase, & S. Takagi. (2002). Hot carrier reliability in deep submicrometer MOSFETs. ed 32. 569–572. 3 indexed citations
6.
Sato, Kazunobu, et al.. (2000). Effect of Hydrogen Treatment on High Efficiency Electroluminescence Device Using Silicon Nanocrystals. MRS Proceedings. 638. 2 indexed citations
7.
Uchida, H., et al.. (1999). Effect of alakaline pretreatments (KOH, NaOH, LiOH) on electrochemical hydriding rate and work function of LaNi2.5Co2.5. Journal of Alloys and Compounds. 293-295. 751–755. 14 indexed citations
8.
Wakaki, Moriaki, M. Iwase, Yoshiyuki Show, et al.. (1996). Raman spectroscopy of germanium films deposited with cluster-beam technique. Physica B Condensed Matter. 219-220. 535–537. 15 indexed citations
9.
Show, Yoshiyuki, et al.. (1996). Correlation between light emission and dangling bonds in porous silicon. Applied Surface Science. 92. 617–620. 11 indexed citations
10.
Sato, Seiichi, Satoshi Nozaki, Hiroshi Morisaki, & M. Iwase. (1995). Tetragonal germanium flims deposited by the cluster-beam evaporation technique. Applied Physics Letters. 66(23). 3176–3178. 61 indexed citations
11.
Nozaki, Shinji, Seiichi Sato, Hiroshi Ono, Hiroshi Morisaki, & M. Iwase. (1995). Phase Transformation of Germanium Ultrafine Particles at High Temperature. MRS Proceedings. 405. 4 indexed citations
12.
Takagi, S., Akira Toriumi, M. Iwase, & H. Tango. (1994). On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration. IEEE Transactions on Electron Devices. 41(12). 2357–2362. 1164 indexed citations breakdown →
13.
Inaba, S., Tomohisa Mizuno, M. Iwase, et al.. (1994). Inverter performance of 0.10 μm CMOS operating at room temperature. IEEE Transactions on Electron Devices. 41(12). 2399–2404. 9 indexed citations
14.
Ohnuma, H., K. Ieki, M. Iwase, et al.. (1990). The 16O() reaction at 35 MeV. Nuclear Physics A. 514(2). 273–294. 11 indexed citations
15.
Ohata, Akiko, Akira Toriumi, M. Iwase, & Kenji Natori. (1990). Observation of random telegraph signals: Anomalous nature of defects at the Si/SiO2 interface. Journal of Applied Physics. 68(1). 200–204. 60 indexed citations
16.
Ozawa, Yoshio, M. Iwase, & Akira Toriumi. (1989). Interface State Generation Due to Electron Tunneling into Thin Oxides. Reliability physics. 22–27. 4 indexed citations
17.
Peterson, R.J., M. Yasue, Masahiko Tanaka, et al.. (1988). Forbidden (p,d) pickup to stretched states ofAl26. Physical Review C. 38(5). 2026–2035. 5 indexed citations
18.
Yoshimi, M., et al.. (1988). Study of the operation speed of half-micron design rule CMOS ring oscillators. Electronics Letters. 24(3). 146–147. 3 indexed citations
19.
Toriumi, Akira, M. Iwase, T. Wada, & Kenji Taniguchi. (1986). Reliability in submicron MOSFETs stressed at 77 K. 382–385. 8 indexed citations
20.
Shimizu, Masaki, M. Iwase, & Hiroshi Morisaki. (1985). Schottky-barrier heights at granular-metal/Si interface. Journal of Applied Physics. 57(8). 2953–2955. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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