S. Corcoran

509 total citations
24 papers, 410 citations indexed

About

S. Corcoran is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Surfaces, Coatings and Films. According to data from OpenAlex, S. Corcoran has authored 24 papers receiving a total of 410 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 15 papers in Computational Mechanics and 4 papers in Surfaces, Coatings and Films. Recurrent topics in S. Corcoran's work include Ion-surface interactions and analysis (15 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers) and Silicon and Solar Cell Technologies (9 papers). S. Corcoran is often cited by papers focused on Ion-surface interactions and analysis (15 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers) and Silicon and Solar Cell Technologies (9 papers). S. Corcoran collaborates with scholars based in United States, United Kingdom and Taiwan. S. Corcoran's co-authors include K. Wittmaack, D. P. Griffis, J. Kavalieros, M. Metz, G. Dewey, M. Radosavljević, Uday Shah, Niloy Mukherjee, R. Chau and B. Chu-Kung and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and Applied Surface Science.

In The Last Decade

S. Corcoran

20 papers receiving 388 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Corcoran United States 10 376 108 101 92 82 24 410
R. Kurps Germany 12 427 1.1× 52 0.5× 202 2.0× 118 1.3× 50 0.6× 50 461
E. Ishida United States 7 309 0.8× 115 1.1× 107 1.1× 68 0.7× 53 0.6× 17 357
T. J. Grasby United Kingdom 15 464 1.2× 37 0.3× 224 2.2× 92 1.0× 61 0.7× 28 512
P. Scheiblin France 15 764 2.0× 95 0.9× 159 1.6× 107 1.2× 114 1.4× 51 793
R. H. Kastl United States 9 419 1.1× 150 1.4× 186 1.8× 92 1.0× 22 0.3× 11 452
T. Kuroi Japan 10 349 0.9× 97 0.9× 64 0.6× 58 0.6× 41 0.5× 72 392
A. La Ferla Italy 11 272 0.7× 213 2.0× 65 0.6× 64 0.7× 25 0.3× 36 331
R. G. Mazur United States 7 268 0.7× 31 0.3× 156 1.5× 56 0.6× 31 0.4× 17 301
I. Lagnado United States 11 403 1.1× 41 0.4× 87 0.9× 60 0.7× 61 0.7× 32 424
B. Anthony United States 10 292 0.8× 52 0.5× 75 0.7× 178 1.9× 28 0.3× 19 331

Countries citing papers authored by S. Corcoran

Since Specialization
Citations

This map shows the geographic impact of S. Corcoran's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Corcoran with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Corcoran more than expected).

Fields of papers citing papers by S. Corcoran

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Corcoran. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Corcoran. The network helps show where S. Corcoran may publish in the future.

Co-authorship network of co-authors of S. Corcoran

This figure shows the co-authorship network connecting the top 25 collaborators of S. Corcoran. A scholar is included among the top collaborators of S. Corcoran based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Corcoran. S. Corcoran is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
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Jones, K. S., et al.. (2007). 3-D analysis of semiconductor dopant distributions in a patterned structure using LEAP. Ultramicroscopy. 108(6). 536–539. 15 indexed citations
4.
Cea, S., et al.. (2003). Modeling of ultrahighly doped shallow junctions for aggressively scaled CMOS. 46. 875–878. 6 indexed citations
5.
Corcoran, S., Jerry Hunter, & A. Budrevich. (2003). SIMS characterization of ion implanted materials: current status and future opportunities. 1. 452–460. 1 indexed citations
6.
Dowsett, M. G., et al.. (2002). Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resistive Si1−xGex alloy layers. Applied Surface Science. 203-204. 500–503. 15 indexed citations
7.
Corcoran, S., et al.. (2002). In-line measurement of Xj on 300 mm wafers. 169–172. 1 indexed citations
8.
9.
Law, Mark E., et al.. (2002). Nonmelt laser annealing of 5-KeV and 1-KeV boron-implanted silicon. IEEE Transactions on Electron Devices. 49(7). 1118–1123. 22 indexed citations
10.
Wittmaack, K. & S. Corcoran. (1998). Sources of error in quantitative depth profiling of shallow doping distributions by secondary-ion-mass spectrometry in combination with oxygen flooding. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(1). 272–279. 55 indexed citations
11.
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Venables, D., et al.. (1997). Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique. Journal of Applied Physics. 82(11). 5811–5815. 5 indexed citations
13.
Felch, Susan B., et al.. (1993). A comparison of three techniques for profiling ultra-shallow p+-n junctions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 74(1-2). 156–159. 7 indexed citations
14.
Corcoran, S. & Susan B. Felch. (1992). Evaluation of polyencapsulation, oxygen leak, and low energy ion bombardment in the reduction of secondary ion mass spectrometry surface ion yield transients. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(1). 342–347. 9 indexed citations
15.
Yu, Ning, et al.. (1991). Channeling effect of P implantation in Si(100). Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 59-60. 1061–1066. 5 indexed citations
16.
Corcoran, S., et al.. (1989). Characterization of a fast atom source for secondary ion mass spectrometry. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 7(3). 1706–1711.
17.
Corcoran, S., W. S. Woodward, Richard W. Linton, & D. P. Griffis. (1989). PC-based interface for the Cameca IMS-3f ion microscope. Review of Scientific Instruments. 60(11). 3560–3562.
18.
Palmour, John W., R. F. Davis, Hoyoul Kong, S. Corcoran, & D. P. Griffis. (1989). Dopant Redistribution during Thermal Oxidation of Monocrystalline Beta ‐ SiC Thin Films. Journal of The Electrochemical Society. 136(2). 502–507. 31 indexed citations
19.
Linton, Richard W., et al.. (1989). Applications of Sims to Spatially Modified Polymer Film Characterization. MRS Proceedings. 153.
20.
Osburn, C. M., Dipika Sharma, D. P. Griffis, et al.. (1988). The Effects of Titanium Silicide Formation on Dopant Redistribution. Journal of The Electrochemical Society. 135(6). 1490–1504. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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