N. Shigyo

818 total citations
54 papers, 523 citations indexed

About

N. Shigyo is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, N. Shigyo has authored 54 papers receiving a total of 523 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 5 papers in Hardware and Architecture and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in N. Shigyo's work include Advancements in Semiconductor Devices and Circuit Design (37 papers), Semiconductor materials and devices (32 papers) and Silicon Carbide Semiconductor Technologies (25 papers). N. Shigyo is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (37 papers), Semiconductor materials and devices (32 papers) and Silicon Carbide Semiconductor Technologies (25 papers). N. Shigyo collaborates with scholars based in Japan and France. N. Shigyo's co-authors include T. Wada, H. Tango, M. Yoshimi, M. Norishima, Shin Nakamura, K. Katō, Hiroki Tanimoto, K. Hieda, T. Hamamoto and Y. Ushiku and has published in prestigious journals such as Applied Physics Letters, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices.

In The Last Decade

N. Shigyo

48 papers receiving 497 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Shigyo Japan 12 494 76 52 34 31 54 523
Renaud Gillon Belgium 15 880 1.8× 100 1.3× 72 1.4× 42 1.2× 16 0.5× 107 919
S. Kumashiro Japan 14 467 0.9× 102 1.3× 51 1.0× 54 1.6× 41 1.3× 64 523
Thomas A. DeMassa United States 11 393 0.8× 67 0.9× 69 1.3× 32 0.9× 11 0.4× 44 413
Xuejue Huang United States 11 1.1k 2.2× 41 0.5× 156 3.0× 38 1.1× 69 2.2× 26 1.1k
Jeffrey B. Johnson United States 12 415 0.8× 41 0.5× 41 0.8× 21 0.6× 32 1.0× 49 431
Ickhyun Song United States 15 705 1.4× 59 0.8× 81 1.6× 28 0.8× 32 1.0× 75 753
Yungseon Eo South Korea 12 330 0.7× 36 0.5× 28 0.5× 16 0.5× 40 1.3× 46 349
D. Becher United States 10 613 1.2× 119 1.6× 125 2.4× 34 1.0× 74 2.4× 20 652
R.C. Booth United Kingdom 9 258 0.5× 122 1.6× 26 0.5× 18 0.5× 16 0.5× 29 289
Kazuo Terada Japan 11 450 0.9× 25 0.3× 71 1.4× 22 0.6× 50 1.6× 62 474

Countries citing papers authored by N. Shigyo

Since Specialization
Citations

This map shows the geographic impact of N. Shigyo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Shigyo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Shigyo more than expected).

Fields of papers citing papers by N. Shigyo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Shigyo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Shigyo. The network helps show where N. Shigyo may publish in the future.

Co-authorship network of co-authors of N. Shigyo

This figure shows the co-authorship network connecting the top 25 collaborators of N. Shigyo. A scholar is included among the top collaborators of N. Shigyo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Shigyo. N. Shigyo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Ilyin, Y., et al.. (2014). Busbar System for ITER Magnets. IEEE Transactions on Applied Superconductivity. 24(3). 1–5. 9 indexed citations
3.
Shigyo, N., et al.. (2006). Alpha and Neutron SER of embedded-SRAM and Novel Estimation Method. 1–3. 2 indexed citations
4.
Miura–Mattausch, M., Hans Jürgen Mattausch, S. Kumashiro, et al.. (2003). Precise physical modeling of the reverse-short-channel effect for circuit simulation. 207–210.
5.
Shigyo, N., Hiroshi Kawashima, & S. Yasuda. (2003). Design of ESD protection device using statistical methods. 337–340.
6.
7.
8.
Kinoshita, Shigeru, et al.. (2002). Calibration Method for High-Density-Plasma Chemical Vapor Deposition Simulation. Japanese Journal of Applied Physics. 41(Part 1, No. 4A). 1974–1980. 2 indexed citations
9.
Shigyo, N., et al.. (2000). Technology CAD based statistical simulation of MOSFETs. Solid-State Electronics. 44(6). 1001–1007. 4 indexed citations
10.
Shigyo, N., et al.. (1998). Verification of saturation velocity lowering in MOSFET's inversion layer. IEEE Transactions on Electron Devices. 45(2). 460–464. 4 indexed citations
11.
Yoshimi, M., Akira Nishiyama, Atsushi Murakoshi, et al.. (1997). Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure. IEEE Transactions on Electron Devices. 44(3). 423–430. 37 indexed citations
12.
Shigyo, N., et al.. (1997). "Depletion isolation effect" of surrounding gate transistors. IEEE Transactions on Electron Devices. 44(12). 2303–2305. 11 indexed citations
13.
Shigyo, N., et al.. (1996). Improvements on Subthreshold-Swing and Short-Channel Effects of Buried-Channel MOSFET's : Counter-Doped Surface-Channel MOSFET (CDSC). Transactions of the Institute of Electronics, Information and Communication Engineers. 79(6). 244–251. 3 indexed citations
14.
Shigyo, N., et al.. (1996). Alleviation of subthreshold swing and short‐channel effect in buried‐channel MOSFETs: The counter‐doped surface‐channel MOSFET structure. Electronics and Communications in Japan (Part II Electronics). 79(11). 43–50. 4 indexed citations
15.
Shigyo, N., et al.. (1996). Analysis of Si–Ge Source Structure in 0.15 µm SOI MOSFETs Using Two-Dimensional Device Simulation. Japanese Journal of Applied Physics. 35(2S). 992–992. 4 indexed citations
16.
Shigyo, N., et al.. (1993). Physical models for bipolar device simulation and their effects on cutoff frequency. IEEE Transactions on Electron Devices. 40(11). 2087–2089. 2 indexed citations
17.
Shigyo, N., et al.. (1992). An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration. Transactions of the Institute of Electronics, Information and Communication Engineers. 75(2). 156–160. 7 indexed citations
18.
Shigyo, N., et al.. (1986). Analysis of Submicron MOS Device Characteristics Using a Composite Full Three-Dimensional Process/Device Simulation System. Symposium on VLSI Technology. 15–16. 2 indexed citations
19.
Shigyo, N., et al.. (1986). Three-dimensional device simulation using a mixed process/device simulator. 28(1). 301–327. 1 indexed citations
20.
Shigyo, N., et al.. (1982). Analysis of Inverse Narrow-Channel Effect Based on a Three-Dimensional Simulation. Symposium on VLSI Technology. 54–55. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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