K. Ohuchi

644 total citations
48 papers, 341 citations indexed

About

K. Ohuchi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, K. Ohuchi has authored 48 papers receiving a total of 341 indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 4 papers in Biomedical Engineering. Recurrent topics in K. Ohuchi's work include Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (17 papers). K. Ohuchi is often cited by papers focused on Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (17 papers). K. Ohuchi collaborates with scholars based in Japan, United States and Canada. K. Ohuchi's co-authors include Masakatsu Tsuchiaki, K. Adachi, Akira Nishiyama, Y. Toyoshima, K. Ishimaru, M. Takayanagi, A. Hokazono, Kazuhiro Matsuda, Masatoshi Hori and Ichiro Mizushima and has published in prestigious journals such as Applied Physics Letters, IEEE Journal of Solid-State Circuits and Japanese Journal of Applied Physics.

In The Last Decade

K. Ohuchi

44 papers receiving 322 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Ohuchi Japan 10 298 143 45 33 20 48 341
A. Lucero United States 17 669 2.2× 136 1.0× 8 0.2× 15 0.5× 7 0.3× 52 756
Takuji Kimura United States 8 373 1.3× 385 2.7× 16 0.4× 7 0.2× 26 1.3× 32 459
Minquan Li China 11 283 0.9× 89 0.6× 63 1.4× 13 0.4× 8 0.4× 79 437
A. Tervonen Finland 13 426 1.4× 255 1.8× 63 1.4× 54 1.6× 23 1.1× 34 509
S. Assefa United States 11 333 1.1× 192 1.3× 28 0.6× 15 0.5× 5 0.3× 42 495
G. T. Bottger Germany 10 255 0.9× 125 0.9× 76 1.7× 30 0.9× 88 4.4× 40 490
Nasiha Nikolic Australia 12 300 1.0× 70 0.5× 24 0.5× 5 0.2× 21 1.1× 41 477
Berthold Schmidt Germany 11 290 1.0× 157 1.1× 24 0.5× 31 0.9× 4 0.2× 64 378
S. Taguchi Japan 8 206 0.7× 42 0.3× 45 1.0× 51 1.5× 8 0.4× 20 299

Countries citing papers authored by K. Ohuchi

Since Specialization
Citations

This map shows the geographic impact of K. Ohuchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Ohuchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Ohuchi more than expected).

Fields of papers citing papers by K. Ohuchi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Ohuchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Ohuchi. The network helps show where K. Ohuchi may publish in the future.

Co-authorship network of co-authors of K. Ohuchi

This figure shows the co-authorship network connecting the top 25 collaborators of K. Ohuchi. A scholar is included among the top collaborators of K. Ohuchi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Ohuchi. K. Ohuchi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yamamoto, Kentaro, Toshiki Watanabe, Yoshiharu Uchimoto, et al.. (2024). Influence of Primary Particle Morphology and Hydrophilicity of Carbon Matrix on Electrode Coating Quality and Performance of Practical High‐Energy‐Density Li–S Batteries. Advanced Materials Interfaces. 11(7). 2 indexed citations
2.
Ohuchi, K., et al.. (2012). Accurate Method of Measuring Specific Contact Resistivity of Interface between Silicide and Silicon and Its Application. Japanese Journal of Applied Physics. 51(10R). 101302–101302.
3.
4.
Ohuchi, K., et al.. (2007). A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32nm node and beyond. Solid-State Electronics. 51(11-12). 1437–1443. 11 indexed citations
5.
Adachi, K., K. Ohuchi, N. Aoki, et al.. (2006). Direct Observation of 2-D Dopant Profiles of MOSFETs Activated by Millisecond Anneal. 104–107. 1 indexed citations
6.
Hori, Masatoshi, K. Ohuchi, & Kazuhiro Matsuda. (2006). Role of host plant volatile in the host-finding behavior of the strawberry leaf beetle, Galerucella vittaticollis Baly (Coleoptera: Chrysomelidae). Applied Entomology and Zoology. 41(2). 357–363. 24 indexed citations
7.
Adachi, K., K. Ohuchi, Takayuki Ito, et al.. (2006). Issues and Optimization of Millisecond Anneal Process for 45 nm node and beyond. MRS Proceedings. 912. 3 indexed citations
8.
9.
Yamauchi, Takashi, Atsuhiro Kinoshita, K. Ohuchi, & Koichi Kato. (2005). Dopant Redistribution at Nickel Silicide/Silicon Interface. 1 indexed citations
10.
Ohuchi, K., K. Adachi, A. Hokazono, & Y. Toyoshima. (2002). S/D Engineering for Sub-100 nm MOSFET using Ultra Shallow Junction Formation Technique, Elevated S/D Structure and SALICIDE Technique. MRS Proceedings. 717. 5 indexed citations
11.
Ohuchi, K., K. Adachi, A. Hokazono, & Y. Toyoshima. (2002). Source/drain engineering for sub 100-nm technology node. 7–12. 10 indexed citations
12.
13.
Hokazono, A., K. Ohuchi, K. Miyano, et al.. (2002). Source/drain engineering for sub-100 nm CMOS using selective epitaxial growth technique. 243–246. 21 indexed citations
14.
Miyano, K., Ichiro Mizushima, A. Hokazono, K. Ohuchi, & Y. Tsunashima. (2002). Low thermal budget elevated source/drain technology utilizing novel solid phase epitaxy and selective vapor phase etching. 433–436. 2 indexed citations
15.
Ohuchi, K., K. Adachi, Atsushi Murakoshi, et al.. (2001). Ultrashallow Junction Formation for Sub-100 nm Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Controlling Transient Enhanced Diffusion. Japanese Journal of Applied Physics. 40(4S). 2701–2701. 3 indexed citations
16.
Ohuchi, K., et al.. (1999). Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 µm CMOS and Beyond. Japanese Journal of Applied Physics. 38(4S). 2238–2238. 2 indexed citations
17.
Ohuchi, K., et al.. (1995). A High Performance 0.05μm MOSFET with Thin SOI/Buried Oxide Structure. 1 indexed citations
18.
Tanaka, Tomoharu, Yohei Iwata, Yasunori Tanaka, et al.. (1990). A 4-Mbit NAND-EEPROM with tight programmed V t distribution. 105–106. 8 indexed citations
19.
Hamamoto, T., et al.. (1986). Asymmetry of the Substrate Current Characteristics Enhanced by the Gate Bird's Beak. Symposium on VLSI Technology. 67–68. 6 indexed citations
20.
Takeishi, Y., Hisashi Hara, Toshinori Sato, K. Ohuchi, & H. Tango. (1971). The channel-conductance increase of conventional MOS transistors by avalanche injection: Application to read-only memory. 104–106. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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