Z.-Q. Fang

1.3k citations

45 papers · 1.1k indexed · h-index 21

Electrical and Electronic Engineering top 5%
Condensed Matter Physics top 2%
Electronic, Optical and Magnetic Materials top 5%
Materials Chemistry top 10%
Atomic and Molecular Physics, and Optics top 10%

Co-authors: D. C. Look B. Claflin J. W. Hemsky M. Mack I. Adesida Dae‐Hyeong Kim R. J. Molnar R. Vetury
Topics: Semiconductor materials and devices (30 papers)GaN-based semiconductor devices and materials (16 papers)Ga2O3 and related materials (14 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: United States South Korea Russia

In The Last Decade

Z.-Q. Fang

43 papers receiving 1.1k citations

Peers

Countries citing papers authored by Z.-Q. Fang

Since Specialization

Citations

This map shows the geographic impact of Z.-Q. Fang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Z.-Q. Fang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Z.-Q. Fang more than expected).

Fields of papers citing papers by Z.-Q. Fang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Z.-Q. Fang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Z.-Q. Fang. The network helps show where Z.-Q. Fang may publish in the future.

Co-authorship network of co-authors of Z.-Q. Fang

This figure shows the co-authorship network connecting the top 25 collaborators of Z.-Q. Fang. A scholar is included among the top collaborators of Z.-Q. Fang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Z.-Q. Fang. Z.-Q. Fang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	A 40nm 4Mb High-Reliability STT-MRAM Achieving 18ns Write-Time and 94.9% Wafer-Level-Die-Yield Across -55°C-to-125°C 2025 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·(unknown),(unknown),(unknown),Yibo Liu,Z.-Q. Fang,(unknown),(unknown),(unknown),(unknown),(unknown),Bo Liu,(unknown),Jun Yang,Qiming Shao,Hao Cai	1
2	Spin-Orbit Torque MRAM TCAM for Tested Model With Cross-Layer Three-Level Reliability Amortizing 2025 ·IEEE Transactions on Electron Devices ·Hongjin Zhu,Z.-Q. Fang,(unknown),Yibo Liu,Yan Cui,Hao Cai	1
3	Deep Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Studied by Current-Mode Deep-Level Transient Spectroscopy: Influence of Device Location 2011 ·Journal of Electronic Materials ·Z.-Q. Fang,B. Claflin,D. C. Look	7
4	Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy 2010 ·Journal of Applied Physics ·H. Tang,Z.-Q. Fang,S. Rolfe,J. A. Bardwell,S. Raymond	24
5	Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes 2009 ·Journal of Applied Physics ·Z.-Q. Fang,G. C. Farlow,B. Claflin,D. C. Look,(unknown)	22
6	Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy 2008 ·Journal of Applied Physics ·Z.-Q. Fang,B. Claflin,D. C. Look,(unknown),H. L. Mosbacker,L. J. Brillson	21
7	Electron irradiation induced deep centers in hydrothermally grown ZnO 2007 ·Journal of Applied Physics ·Z.-Q. Fang,B. Claflin,D. C. Look,G. C. Farlow	37
8	Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates 2005 ·Journal of Electronic Materials ·Z.-Q. Fang,B. Claflin,D. C. Look,(unknown),W. C. Mitchel	25
9	Thermoelectric effect spectroscopy of deep levels in semi-insulating GaN 2002 ·Journal of Applied Physics ·U.V. Desnica,(unknown),Z.-Q. Fang,D. C. Look	16
10	Deep centers in a free-standing GaN layer 2001 ·Applied Physics Letters ·Z.-Q. Fang,D. C. Look,Paolo Visconti,(unknown),Chao Lu,Feng Yun,H. Morkoç̌,(unknown),(unknown)	89
11	Characterization of near-surface traps in semiconductors: GaN 2001 ·Applied Physics Letters ·D. C. Look,Z.-Q. Fang	34
12	Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy 1999 ·Journal of Electronic Materials ·Z.-Q. Fang,(unknown),D. C. Look,(unknown),J. E. Van Nostrand	8
13	Effect of high-temperature annealing on electrical and optical properties of undoped semi-insulating GaAs 1998 ·Journal of Applied Physics ·Z.-Q. Fang,D. C. Reynolds,D. C. Look,(unknown),(unknown),Robert Jones	2
14	Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy 1998 ·Journal of Applied Physics ·Wook Kim,A. Botchkarev,H. Morkoç̌,Z.-Q. Fang,D. C. Look,David J. Smith	10
15	Microscopic nature of thermally stimulated current and electrical compensation in semi-insulating GaAs 1997 ·Journal of Applied Physics ·S. Kuisma,K. Saarinen,(unknown),Z.-Q. Fang,D. C. Look	10
16	Effect of multistep wafer-annealing on main traps in Czochralski-grown semi-insulating GaAs 1996 ·Applied Physics Letters ·Z.-Q. Fang,D. C. Look,(unknown),(unknown)	6
17	Simple measurement of 300 K electron capture cross section for EL2 in GaAs 1996 ·Journal of Applied Physics ·D. C. Look,Z.-Q. Fang	13
18	Convenient determination of concentration and energy in deep-level transient spectroscopy 1995 ·Journal of Applied Physics ·D. C. Look,Z.-Q. Fang,J. R. Sizelove	12
19	Deep traps in molecular-beam-epitaxial GaAs grown at low temperatures 1994 ·Journal of Applied Physics ·D. C. Look,Z.-Q. Fang,Hideki Yamamoto,J. R. Sizelove,M. G. Mier,C. E. Stutz	27
20	Traps in semi-insulating InP studied by thermally stimulated current spectroscopy 1992 ·Applied Physics Letters ·Z.-Q. Fang,D. C. Look,J.H. Zhao	30

About Z.-Q. Fang

Z.-Q. Fang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Surfaces, Coatings and Films, having authored 45 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (30 papers), GaN-based semiconductor devices and materials (16 papers) and Ga2O3 and related materials (14 papers). The work is most often cited by research in Condensed Matter Physics (678 citations), Electronic, Optical and Magnetic Materials (424 citations) and Electrical and Electronic Engineering (756 citations). Z.-Q. Fang has collaborated with scholars based in United States, South Korea and Russia. Frequent co-authors include D. C. Look, D. C. Look, B. Claflin, J. W. Hemsky, M. Mack, I. Adesida, Dae‐Hyeong Kim, R. J. Molnar, R. Vetury and Mourad Benamara. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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