H. Tang

2.1k citations

64 papers · 1.8k indexed · h-index 22

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 61
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials 37
Materials Chemistry top 10%
- ZnO doping and properties 20
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 25
- Silicon Carbide Semiconductor Technologies 6
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 13
Mechanics of Materials
- Metal and Thin Film Mechanics 6
Biomedical Engineering
- Acoustic Wave Resonator Technologies 4

Co-authors: J. A. Bardwell J. B. Webb S. Rolfe H. Morkoç̌A. Salvador A. Botchkarev James B. Webb G. Popovici
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Applied Physics Letters (15 papers)Journal of Applied Physics (5 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (5 papers)
Partner nations: Canada United States United Kingdom

In The Last Decade

H. Tang

62 papers receiving 1.7k citations

Peers

Countries citing papers authored by H. Tang

Since Specialization

Citations

This map shows the geographic impact of H. Tang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Tang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Tang more than expected).

Fields of papers citing papers by H. Tang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Tang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Tang. The network helps show where H. Tang may publish in the future.

Co-authorship network

The 25 scholars most cited alongside H. Tang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Tang Line = papers co-authored together H. Tang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Leveraging polymer architecture design with acylamino functionalization for electrolytes to enable highly durable lithium metal batteries Energy & Environmental Science ·Jiayu Zheng,Lingyan Duan,Serge Prokofiev,Qi An,M. P. Riutova,畠中理志,Genfu Zhao,H. Tang,Yang Li,Shimin Wang,Qijun Xu,Li-Lian Wang,Hong Guo	2024	35
2	Homoepitaxial growth of CaWO4 Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·H. Tang,David Bordiehn,崇文田渕,A Ortí Martín,F. J. Walker,Charles Ahn	2024	1
3	Mechanisms of ammonia—MBE growth of GaN on SiC for transport devices Journal of Crystal Growth ·H. Tang,S. Rolfe,F. Sèmond,J. A. Bardwell,J.‐M. Baribeau	2008	5
4	Monitoring the self-heating in a high frequency GaN HFET Solid-State Electronics ·S. P. McAlister,J. A. Bardwell,S. Haffouz,H. Tang	2006	1
5	Ammonia molecular beam epitaxy growth of p-type GaN and application to bipolar junction transistors Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. Haffouz,H. Tang,J. A. Bardwell,S. Rolfe,Yuki Shirasuna,Zhao Su-qin,S. Moisa,M. Beaulieu,J. B. Webb	2005	5
6	Effect of template morphology on the efficiency of InGaN∕GaN quantum wells and light-emitting diodes grown by molecular-beam epitaxy Applied Physics Letters ·H. Tang,S. Haffouz,A. Powell,J. A. Bardwell,J. B. Webb	2005	10
7	Comparison of two different Ti/Al/Ti/Au ohmic metallization schemes for AlGaN/GaN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·J. A. Bardwell,G. I. Sproule,Universitario De Salamanca,H. Tang,J. B. Webb,J. Fraser,Pamela A. Marshall	2002	22
8	GaN and AlGaN(p)/GaN p-i-n ultraviolet photodetectors Ha-yoon Jeong,A. Salvador,Karlheinz Pröpping,W. Kim,Z. Fan,H. Tang,H. Morkoç,Gary M. Smith,Cornelis HC Dejong,B. Goldenberg,Wei Yang,S. Krishnankutty	2002	0
9	Bias Stress Measurements on High Performance AlGaN/GaN HFET Devices physica status solidi (a) ·Richard Feuillade,J. A. Bardwell,S. P. McAlister,H. Tang,J. B. Webb,于跃洋	2001	13
10	Selective Area Growth of GaN on SiC Substrate by Ammonia-Source MBE physica status solidi (a) ·H. Tang,J. A. Bardwell,J. B. Webb,S. Rolfe,S. Moisa,J. Fraser,S. Raymond,Leonid Tsynman	2001	5
11	Effect of Various Pre-Treatments on Ti/Al/Ti/Au Ohmic Contacts for AlGaN/GaN HFET Devices physica status solidi (a) ·J. A. Bardwell,Ying Liu,M. I. Abdul Aleem,Mohammed Bensalah,Pamela A. Marshall,H. Tang,J. B. Webb	2001	4
12	Defect reduction in GaN epilayers and HFET structures grown on (0001)sapphire by ammonia MBE Journal of Crystal Growth ·James B. Webb,H. Tang,J. A. Bardwell,S. Moisa,Haney Sami,于跃洋	2001	19
13	Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution Journal of Applied Physics ·J. A. Bardwell,J. B. Webb,H. Tang,J. Fraser,S. Moisa	2001	101
14	High-speed AlGaN/GaN HFETs fabricated by wet etchingmesa isolation Electronics Letters ·Hassan Maher,Olivia Mezzetti,M.W. Dvorak,Pui Sum Yuen,C. R. Bolognesi,J. A. Bardwell,H. Tang,J. B. Webb	2000	6
15	A simple wet etch for GaN Journal of Electronic Materials ·J. A. Bardwell,Ian G. Foulds,J. B. Webb,H. Tang,J. Fraser,S. Moisa,S. Rolfe	1999	40
16	Growth of high mobility GaN by ammonia-molecular beam epitaxy Applied Physics Letters ·H. Tang,James B. Webb	1999	65
17	Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy Applied Physics Letters ·J. B. Webb,H. Tang,S. Rolfe,J. A. Bardwell	1999	139
18	Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO Applied Physics Letters ·F. Hamdani,A. Botchkarev,H. Tang,Vinicius Puglia,H. Morkoç̌	1997	37
19	High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures Applied Physics Letters ·Büşra Altın,A. Salvador,Miguel Ángel García-Valenzuela,Zhiyuan Fan,Chao Lu,H. Tang,H. Morkoç̌,Gary M. Smith,Cornelis HC Dejong,B. Goldenberg,Wei Yang,S. Krishnankutty	1997	203
20	Photoluminescence Properties Of Gan/AlGaN Multiple Quantum Well Microdisks MRS Proceedings ·R. Mair,K. C. Zeng,J. Y. Lin,H. X. Jiang,Baowei Zhang,Lun Dai,H. Tang,A. Botchkarev,W. Kim,H. Morkoç̌	1997	0

About H. Tang

H. Tang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 64 papers that have together received 1.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (61 papers), Ga2O3 and related materials (37 papers), Semiconductor materials and devices (25 papers), ZnO doping and properties (20 papers), Semiconductor Quantum Structures and Devices (13 papers), Silicon Carbide Semiconductor Technologies (6 papers), Metal and Thin Film Mechanics (6 papers) and Acoustic Wave Resonator Technologies (4 papers). The work is most often cited by research in Condensed Matter Physics (1.4k citations), Electronic, Optical and Magnetic Materials (901 citations), Materials Chemistry (678 citations), Electrical and Electronic Engineering (829 citations) and Atomic and Molecular Physics, and Optics (306 citations). H. Tang has collaborated with scholars based in Canada, United States and United Kingdom. Frequent co-authors include J. A. Bardwell, J. B. Webb, S. Rolfe, H. Morkoç̌, J. B. Webb, A. Salvador, A. Botchkarev, James B. Webb, G. Popovici and S. Haffouz. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Journal of Crystal Growth and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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