T. G. Andersson

2.3k citations

118 papers · 1.9k indexed · h-index 20

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 38
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices 64
- Quantum and electron transport phenomena 17
- Surface and Thin Film Phenomena 13
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 12
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 40
- Advanced Semiconductor Detectors and Materials 13
- Semiconductor Lasers and Optical Devices 12
Surfaces, Coatings and Films top 5%

Co-authors: S. Norrman O. Hunderi Claes‐Göran Granqvist Ashraf Uddin V. D. Kulakovskiĭ J. T. Vallin K. Prabhakaran Stefan P. Svensson
Cited by: Condensed Matter Physics Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials
Journals: Applied Physics Letters (15 papers)Journal of Applied Physics (14 papers)Physical review. B, Condensed matter (7 papers)
Partner nations: Sweden China Germany

In The Last Decade

T. G. Andersson

114 papers receiving 1.8k citations

Peers

Countries citing papers authored by T. G. Andersson

Since Specialization

Citations

This map shows the geographic impact of T. G. Andersson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. G. Andersson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. G. Andersson more than expected).

Fields of papers citing papers by T. G. Andersson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. G. Andersson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. G. Andersson. The network helps show where T. G. Andersson may publish in the future.

Co-authorship network

The 25 scholars most cited alongside T. G. Andersson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. G. Andersson Line = papers co-authored together T. G. Andersson links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 μm intersubband absorption Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Ziquan He,T. G. Andersson,Petter Holmström,Maréchal Maréchal,Y. Zhang,S. Lourdudoss,L. Thylén	2007	6
2	Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq3 films Solid State Communications ·保史藤野,Ashraf Uddin,T. G. Andersson	2007	4
3	Encapsulation of OLED device by Using Anisotropic Conductive Adhesive Yan Zhang,金純美,Takashi Nagasawa,Johan Liu,T. G. Andersson,А.S. Kudussov	2007	3
4	Two-dimensional electron mobility limitation mechanisms in AlxGa1-xN/GaN hetero¬structures Chalmers Publication Library (Chalmers University of Technology) ·Diana M Marshall,Valarezo Macías,T. G. Andersson	2005	27
5	Mobility in epitaxial GaN: Limitations of free-electron concentration due to dislocations and compensation Physical review. B, Condensed matter ·Diana M Marshall,T. G. Andersson	2003	40
6	Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBE Applied Surface Science ·AJAY K BHARADWAJ,J.V. Thordson,Qiming Zhao,T. G. Andersson	2000	2
7	Diffusion of Nitrogen from a Buried Doping Layer in Gallium Arsenide Revealing the Prominent Role of As Interstitials Physical Review Letters ·David Zeldin,N. A. Stolwijk,J.V. Thordson,U. Södervall,T. G. Andersson	1998	41
8	Si δ-layers embedded in GaAs Applied Physics Letters ·P. O. Holtz,Bo E. Sernelius,長間弘宣,Г. Позина,Henry H. Radamson,Lynnette D. Madsen,J. P. McCaffrey,B. Ḿonemar,J.V. Thordson,T. G. Andersson	1998	1
9	Room-temperature excitons in strained InGaAs/GaAs quantum wells Journal of Physics Condensed Matter ·Wenzhong Shen,Saskia Sikabonyi,S. C. Shen,Rosinei Aparecida de Souza,T. G. Andersson	1995	2
10	Interfacial Microstructure of In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs Strained Layers Materials science forum ·E.M. Beekman,T. G. Andersson,G. L. Dunlop	1995	1
11	Tailoring InAs/Ga1-InxSb superlattices for long-wavelength IR applications Superlattices and Microstructures ·C.-R. Schmidt,T. G. Andersson	1994	14
12	Preparation of a Pt-GaAs Schottky contact by ion plating Solid-State Electronics ·G. Pető,T. G. Andersson	1991	2
13	Magnetic field increased LO-phonon Raman scattering in selectively doped n-AlGaAs/InGaAs/GaAs quantum well Superlattices and Microstructures ·L. V. Butov,V. D. Kulakovskiǐ,知男村瀬,T. G. Andersson	1991	0
14	Phototransmission study of strained-layer InxGa1−x As/GaAs single quantum well structures Journal of Applied Physics ·Shu Yuan,Shumin Wang,Shixiong Qian,山下信,T. G. Andersson,Kelli Stetson	1990	1
15	Band edge offsets in strained (InGa)As-(AlGa)As heterostructures Solid State Communications ·T. G. Andersson,Ram Sagar Roy,V. D. Kulakovskiĭ,Ashraf Uddin,J. T. Vallin	1987	22
16	Variation of the critical layer thickness with In content in strained InxGa1−xAs-GaAs quantum wells grown by molecular beam epitaxy Applied Physics Letters ·T. G. Andersson,S. Petovar,V. D. Kulakovskiĭ,Ashraf Uddin,J. T. Vallin	1987	206
17	A platinum evaporation source for molecular beam epitaxy applications Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Mikayla Rae Hargis,Rufiza Zhilania Fadhilla,T. G. Andersson	1986	1
18	Interpretation of low-energy Auger spectra from AlAs and GaAs(001): Applications to surface preparation Physical review. B, Condensed matter ·Stefan P. Svensson,P. O. Nilsson,T. G. Andersson	1985	11
19	A spectrum data processing system Computer Physics Communications ·J. M. Ahearn,Stefan P. Svensson,T. G. Andersson	1982	1
20	A model for the structure of coalescence grown discontinuous metal films physica status solidi (a) ·T. G. Andersson,S. Norrman	1980	2

About T. G. Andersson

T. G. Andersson is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 118 papers that have together received 1.9k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (64 papers), Semiconductor materials and devices (40 papers), GaN-based semiconductor devices and materials (38 papers), Quantum and electron transport phenomena (17 papers), Surface and Thin Film Phenomena (13 papers), Advanced Semiconductor Detectors and Materials (13 papers), Ga2O3 and related materials (12 papers) and Semiconductor Lasers and Optical Devices (12 papers). The work is most often cited by research in Condensed Matter Physics (678 citations), Atomic and Molecular Physics, and Optics (1.2k citations), Electronic, Optical and Magnetic Materials (457 citations), Electrical and Electronic Engineering (1.1k citations) and Surfaces, Coatings and Films (129 citations). T. G. Andersson has collaborated with scholars based in Sweden, China and Germany. Frequent co-authors include S. Norrman, O. Hunderi, Claes‐Göran Granqvist, Ashraf Uddin, V. D. Kulakovskiĭ, J. T. Vallin, K. Prabhakaran, Stefan P. Svensson, J.V. Thordson and J. R. Söderström. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Physical review. B, Condensed matter, Thin Solid Films and Journal of Crystal Growth.

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