Satoru Nagao

930 total citations
21 papers, 786 citations indexed

About

Satoru Nagao is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Satoru Nagao has authored 21 papers receiving a total of 786 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Condensed Matter Physics, 10 papers in Electrical and Electronic Engineering and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Satoru Nagao's work include GaN-based semiconductor devices and materials (14 papers), Ga2O3 and related materials (7 papers) and ZnO doping and properties (7 papers). Satoru Nagao is often cited by papers focused on GaN-based semiconductor devices and materials (14 papers), Ga2O3 and related materials (7 papers) and ZnO doping and properties (7 papers). Satoru Nagao collaborates with scholars based in Japan, Poland and South Korea. Satoru Nagao's co-authors include H. Namita, Kenji Fujito, Tae Mochizuki, Shuichi Kubo, Kenji Shimoyama, Tsunenobu Kimoto, Jun Suda, Yoshio Bando, Tsunenori Sakamoto and Kohei Ueno and has published in prestigious journals such as Applied Physics Letters, Japanese Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Satoru Nagao

21 papers receiving 757 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Satoru Nagao Japan 10 623 364 348 340 263 21 786
B. Borisov United States 15 639 1.0× 424 1.2× 304 0.9× 310 0.9× 164 0.6× 43 788
S.J. Chang Taiwan 16 612 1.0× 298 0.8× 342 1.0× 417 1.2× 220 0.8× 48 812
Y.P. Hsu Taiwan 17 577 0.9× 215 0.6× 379 1.1× 307 0.9× 207 0.8× 24 700
Masatomo Shibata Japan 11 518 0.8× 258 0.7× 277 0.8× 300 0.9× 130 0.5× 11 597
Tomoyuki Tanikawa Japan 17 699 1.1× 376 1.0× 356 1.0× 290 0.9× 262 1.0× 80 840
Takuji Okahisa Japan 7 644 1.0× 335 0.9× 301 0.9× 249 0.7× 223 0.8× 8 686
A. Usui Japan 11 644 1.0× 365 1.0× 334 1.0× 334 1.0× 184 0.7× 24 745
Ryuji Katayama Japan 14 628 1.0× 264 0.7× 288 0.8× 357 1.1× 421 1.6× 129 808
Kensaku Motoki Japan 6 559 0.9× 284 0.8× 257 0.7× 245 0.7× 160 0.6× 6 603
R. Hickman United States 11 612 1.0× 314 0.9× 207 0.6× 381 1.1× 146 0.6× 20 675

Countries citing papers authored by Satoru Nagao

Since Specialization
Citations

This map shows the geographic impact of Satoru Nagao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Satoru Nagao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Satoru Nagao more than expected).

Fields of papers citing papers by Satoru Nagao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Satoru Nagao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Satoru Nagao. The network helps show where Satoru Nagao may publish in the future.

Co-authorship network of co-authors of Satoru Nagao

This figure shows the co-authorship network connecting the top 25 collaborators of Satoru Nagao. A scholar is included among the top collaborators of Satoru Nagao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Satoru Nagao. Satoru Nagao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tsukada, Yusuke, Yuuki Enatsu, Shuichi Kubo, et al.. (2016). High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds. Japanese Journal of Applied Physics. 55(5S). 05FC01–05FC01. 34 indexed citations
2.
Miyake, Hideto, et al.. (2014). Selective-area growth of GaN on non- and semi-polar bulk GaN substrates. Japanese Journal of Applied Physics. 53(5S1). 05FL04–05FL04. 9 indexed citations
3.
Miyake, Hideto, et al.. (2013). 有機金属気相エピタキシーによる半極性(2021)及び(2021)GaN基板の選択領域成長. Japanese Journal of Applied Physics. 52. 1–8. 1 indexed citations
4.
Chichibu, Shigefusa F., Yoichi Ishikawa, K. Hazu, et al.. (2013). Spatio-Time-Resolved Cathodoluminescence Studies on Freestanding GaN Substrates Grown by Hydride Vapor Phase Epitaxy. ECS Transactions. 50(42). 1–8. 2 indexed citations
5.
Ma, Bei, et al.. (2013). Selective Area Growth of Semipolar (2021) and (2021) GaN Substrates by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics. 52(8S). 08JC06–08JC06. 5 indexed citations
6.
Suda, Jun, et al.. (2010). Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates. Applied Physics Express. 3(10). 101003–101003. 127 indexed citations
7.
Ueno, Kohei, et al.. (2009). Room temperature growth of semipolar AlN (1$ \bar 1 $02) films on ZnO (1$ \bar 1 $02) substrates by pulsed laser deposition. physica status solidi (RRL) - Rapid Research Letters. 3(2-3). 58–60. 11 indexed citations
8.
Kobayashi, Atsushi, Kohei Ueno, Jitsuo Ohta, et al.. (2009). Room‐temperature epitaxial growth of high‐quality m ‐plane InGaN films on ZnO substrates. physica status solidi (RRL) - Rapid Research Letters. 3(4). 124–126. 16 indexed citations
9.
Fujito, Kenji, et al.. (2009). Bulk GaN crystals grown by HVPE. Journal of Crystal Growth. 311(10). 3011–3014. 291 indexed citations
10.
Lee, Hyojong, Jun‐Seok Ha, Hyun‐Jae Lee, et al.. (2008). Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer. Journal of Crystal Growth. 311(3). 470–473. 5 indexed citations
11.
Kobayashi, Atsushi, et al.. (2008). Growth and characterization of nonpolar and semipolar (Al,In,Ga) N films on ZnO substrates. IEICE technical report. Speech. 108(323). 17–20. 3 indexed citations
12.
Fujito, Kenji, et al.. (2008). High‐quality nonpolar m ‐plane GaN substrates grown by HVPE. physica status solidi (a). 205(5). 1056–1059. 137 indexed citations
13.
Ueno, Kohei, et al.. (2007). Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers. Applied Physics Letters. 91(8). 24 indexed citations
14.
Kobayashi, Atsushi, Satoshi Kawano, Kohei Ueno, et al.. (2007). Growth of a-plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer. Applied Physics Letters. 91(19). 17 indexed citations
15.
16.
Nakayama, Takeshi, F. Minami, Satoru Nagao, Yuichi Inoue, & Hideki Gotoh. (1993). Pressure Dependence of Band Discontinuity in GaAs/AlInP Quantum Well Structures. Japanese Journal of Applied Physics. 32(S1). 151–151. 2 indexed citations
17.
Nagao, Satoru, et al.. (1993). Layer-by-layer growth mechanism of AlxGa1-xP grown by gas-source MBE. Journal of Crystal Growth. 127(1-4). 213–216. 2 indexed citations
18.
Nagao, Satoru, et al.. (1989). Growth of (AlIn)P/GaAs single quantum well structure on (001) GaAs by gas source MBE using AsH3 and PH3 gas. Journal of Crystal Growth. 95(1-4). 163–166. 4 indexed citations
19.
Shimoyama, Kenji, et al.. (1988). CW Operation and Extremely Low Capacitance of TJ-BH MQW Laser Diodes Fabricated by Entire MOVPE : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials. Japanese Journal of Applied Physics. 27(12). 1 indexed citations
20.
Sakamoto, Tsunenori, et al.. (1987). Reflection High-Energy Electron Diffraction Intensity Oscillations during GexSi1-x MBE Growth on Si(001) Substrates. Japanese Journal of Applied Physics. 26(5R). 666–666. 76 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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