Daigo Kikuta

598 total citations
41 papers, 495 citations indexed

About

Daigo Kikuta is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Daigo Kikuta has authored 41 papers receiving a total of 495 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Condensed Matter Physics, 36 papers in Electrical and Electronic Engineering and 15 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Daigo Kikuta's work include GaN-based semiconductor devices and materials (39 papers), Semiconductor materials and devices (34 papers) and Ga2O3 and related materials (15 papers). Daigo Kikuta is often cited by papers focused on GaN-based semiconductor devices and materials (39 papers), Semiconductor materials and devices (34 papers) and Ga2O3 and related materials (15 papers). Daigo Kikuta collaborates with scholars based in Japan and Switzerland. Daigo Kikuta's co-authors include Tetsuo Narita, Tetsu Kachi, Tsutomu Uesugi, Jin‐Ping Ao, Yasuo Ohno, Kenji Itoh, Yoshiki Naoi, Keita Kataoka, Kazuyoshi Tomita and Tamotsu Hashizume and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

Daigo Kikuta

40 papers receiving 480 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Daigo Kikuta Japan 11 417 417 225 62 53 41 495
Yujin Hori Japan 8 610 1.5× 566 1.4× 428 1.9× 127 2.0× 59 1.1× 10 670
Yuuki Enatsu Japan 10 436 1.0× 307 0.7× 209 0.9× 108 1.7× 59 1.1× 14 461
Dong Ji United States 13 625 1.5× 548 1.3× 295 1.3× 111 1.8× 91 1.7× 30 686
Joachim Wuerfl Germany 10 370 0.9× 379 0.9× 158 0.7× 72 1.2× 80 1.5× 23 466
Chihoko Mizue Japan 7 674 1.6× 621 1.5× 446 2.0× 141 2.3× 91 1.7× 11 740
Dave Bour United States 8 653 1.6× 601 1.4× 312 1.4× 130 2.1× 153 2.9× 10 751
Marcin Miczek Japan 7 548 1.3× 511 1.2× 348 1.5× 116 1.9× 81 1.5× 9 601
Zhongda Li United States 10 349 0.8× 383 0.9× 182 0.8× 101 1.6× 90 1.7× 34 488
Quanbin Zhou China 12 311 0.7× 224 0.5× 157 0.7× 133 2.1× 79 1.5× 28 376
Brianna S. Eller United States 8 336 0.8× 331 0.8× 278 1.2× 165 2.7× 83 1.6× 12 486

Countries citing papers authored by Daigo Kikuta

Since Specialization
Citations

This map shows the geographic impact of Daigo Kikuta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daigo Kikuta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daigo Kikuta more than expected).

Fields of papers citing papers by Daigo Kikuta

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daigo Kikuta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daigo Kikuta. The network helps show where Daigo Kikuta may publish in the future.

Co-authorship network of co-authors of Daigo Kikuta

This figure shows the co-authorship network connecting the top 25 collaborators of Daigo Kikuta. A scholar is included among the top collaborators of Daigo Kikuta based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daigo Kikuta. Daigo Kikuta is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Iguchi, Hiroko, Tetsuo Narita, Emi Kano, et al.. (2024). Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor. Applied Physics Letters. 125(2). 4 indexed citations
2.
Narita, Tetsuo, Hiroko Iguchi, Daigo Kikuta, et al.. (2024). Engineered interface charges and traps in GaN MOSFETs providing high channel mobility and E-mode operation. Japanese Journal of Applied Physics. 63(12). 120801–120801. 3 indexed citations
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Narita, Tetsuo, Kazuyoshi Tomita, Hiroko Iguchi, et al.. (2024). Transport Properties in GaN Metal–Oxide–Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack. physica status solidi (RRL) - Rapid Research Letters. 18(12). 2 indexed citations
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Tomita, Kazuyoshi, Emi Kano, Nobuyuki Ikarashi, et al.. (2023). Over 200 cm2 V−1 s−1 of electron inversion channel mobility for AlSiO/GaN MOSFET with nitrided interface. Applied Physics Express. 16(7). 74002–74002. 16 indexed citations
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Tomita, Kazuyoshi, et al.. (2021). Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics. 129(8). 19 indexed citations
11.
Narita, Tetsuo, Daigo Kikuta, Koji Shiozaki, et al.. (2020). Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide(Al2O3)1−x(SiO2)x: First-Principles Exploration of Gate Oxides inGaN-Based Power Devices. Physical Review Applied. 14(1). 9 indexed citations
12.
Isomura, Noritake, Daigo Kikuta, Naoko Takahashi, Satoru Kosaka, & Keita Kataoka. (2020). Local atomic structure of the GaN-side of the Al2O3/GaN interface revealed by X-ray absorption spectroscopy. Applied Surface Science. 515. 146058–146058. 5 indexed citations
13.
Kikuta, Daigo, et al.. (2019). Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices. Applied Physics Express. 13(2). 26504–26504. 38 indexed citations
14.
Isomura, Noritake, Daigo Kikuta, N. Takahashi, Satoru Kosaka, & Keita Kataoka. (2019). Local atomic structure analysis of GaN surfaces via X-ray absorption spectroscopy by detecting Auger electrons with low energies. Journal of Synchrotron Radiation. 26(6). 1951–1955. 6 indexed citations
15.
Kikuta, Daigo, et al.. (2016). Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 35(1). 58 indexed citations
16.
Okamoto, Masayuki, Eiji Hiraki, Toshihiko Tanaka, et al.. (2014). Experimental Validation of Normally-On GaN HEMT and Its Gate Drive Circuit. IEEE Transactions on Industry Applications. 51(3). 2415–2422. 37 indexed citations
17.
Hori, Yujin, Daigo Kikuta, Tetsuo Narita, et al.. (2012). Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces. Japanese Journal of Applied Physics. 51(6R). 60201–60201. 24 indexed citations
18.
Kikuta, Daigo, Tetsuo Narita, Naoko Takahashi, et al.. (2011). Study on post‐etching processes for p‐type GaN using HAX‐PES. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(3-4). 927–930. 4 indexed citations
19.
Okada, Morihito, Motohiro Kamei, Daigo Kikuta, et al.. (2004). Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor. Applied Physics Letters. 84(20). 3996–3998. 6 indexed citations
20.
Nishino, Katsushi, Daigo Kikuta, & Shiro Sakai. (2002). Bulk GaN growth by direct synthesis method. Journal of Crystal Growth. 237-239. 922–925. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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