Bei Ma

471 total citations
32 papers, 388 citations indexed

About

Bei Ma is a scholar working on Condensed Matter Physics, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Bei Ma has authored 32 papers receiving a total of 388 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Condensed Matter Physics, 15 papers in Materials Chemistry and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Bei Ma's work include GaN-based semiconductor devices and materials (22 papers), ZnO doping and properties (11 papers) and Semiconductor Quantum Structures and Devices (9 papers). Bei Ma is often cited by papers focused on GaN-based semiconductor devices and materials (22 papers), ZnO doping and properties (11 papers) and Semiconductor Quantum Structures and Devices (9 papers). Bei Ma collaborates with scholars based in Japan, China and United States. Bei Ma's co-authors include Hideto Miyake, Weiguo Hu, Kazumasa Hiramatsu, Yoshihiro Ishitani, Reina Miyagawa, Zhong Lin Wang, Ting Liu, Mitsuhisa Narukawa, Dabing Li and Xiong Pu and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Nano Energy.

In The Last Decade

Bei Ma

31 papers receiving 372 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Bei Ma Japan 10 251 176 134 112 106 32 388
Liang Jing China 10 210 0.8× 170 1.0× 97 0.7× 204 1.8× 177 1.7× 18 406
J. Senawiratne United States 9 175 0.7× 328 1.9× 108 0.8× 151 1.3× 41 0.4× 25 446
Xuewang Wu United States 11 61 0.2× 279 1.6× 90 0.7× 125 1.1× 48 0.5× 16 376
Yiqiang Ni China 13 340 1.4× 160 0.9× 222 1.7× 225 2.0× 37 0.3× 42 426
Laurent Divay France 10 76 0.3× 302 1.7× 97 0.7× 156 1.4× 52 0.5× 34 407
Marek Ekielski Poland 11 131 0.5× 135 0.8× 124 0.9× 278 2.5× 67 0.6× 43 389
Haicheng Cao Saudi Arabia 16 357 1.4× 319 1.8× 248 1.9× 272 2.4× 112 1.1× 47 632
Jana Přívratská Czechia 7 50 0.2× 211 1.2× 177 1.3× 98 0.9× 159 1.5× 12 413
Haibo Yin China 15 483 1.9× 181 1.0× 254 1.9× 361 3.2× 81 0.8× 61 614
S. C. Hung Taiwan 11 75 0.3× 234 1.3× 58 0.4× 259 2.3× 130 1.2× 29 392

Countries citing papers authored by Bei Ma

Since Specialization
Citations

This map shows the geographic impact of Bei Ma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bei Ma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bei Ma more than expected).

Fields of papers citing papers by Bei Ma

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bei Ma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bei Ma. The network helps show where Bei Ma may publish in the future.

Co-authorship network of co-authors of Bei Ma

This figure shows the co-authorship network connecting the top 25 collaborators of Bei Ma. A scholar is included among the top collaborators of Bei Ma based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Bei Ma. Bei Ma is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kirilenko, Pavel, et al.. (2023). High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates. AIP Advances. 13(4). 4 indexed citations
2.
Ma, Bei, et al.. (2022). Thermal radiation resonating with longitudinal optical phonon from surface micro-stripe structures on metal-gallium nitride and sapphire. Materials Science in Semiconductor Processing. 147. 106726–106726. 9 indexed citations
3.
Ma, Bei, Kohei Ueno, Atsushi Kobayashi, et al.. (2020). Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN. Applied Physics Letters. 117(19). 7 indexed citations
4.
5.
Zhang, Shuo, Bei Ma, Qilin Hua, et al.. (2020). Strain-controlled power devices as inspired by human reflex. Nature Communications. 11(1). 326–326. 68 indexed citations
6.
Jiang, Chunyan, Yan Chen, Jiangman Sun, et al.. (2018). Enhanced photocurrent in InGaN/GaN MQWs solar cells by coupling plasmonic with piezo-phototronic effect. Nano Energy. 57. 300–306. 39 indexed citations
7.
8.
Ma, Bei, et al.. (2016). 半導体のフォノンエネルギー域における多重離散状態と連続状態の量子干渉のRaman研究 p型Ga0.5In0.5P薄膜の例. Journal of Physics D Applied Physics. 49(37). 13. 3 indexed citations
9.
Ma, Bei, et al.. (2016). Depth profile characterization technique for electron density in GaN films by infrared reflectance spectroscopy. Japanese Journal of Applied Physics. 55(5S). 05FH02–05FH02. 4 indexed citations
10.
Zhao, Zhenfu, Chunyan Jiang, Xiong Pu, et al.. (2016). Robust Pb2+ sensor based on flexible ZnO/ZnS core-shell nanoarrays. Applied Physics Letters. 108(15). 4 indexed citations
11.
Ishitani, Yoshihiro, et al.. (2016). Excitation and deexcitation dynamics of excitons in a GaN film based on the analysis of radiation from high-order states. Journal of Physics D Applied Physics. 49(24). 245102–245102. 6 indexed citations
12.
Ma, Bei & Linbo Wang. (2015). An application of rapid detection technologies in a national regulatory laboratory setting: Differentiating imported and domestic drug products of oxcarbazepine using handheld Raman, near infrared, and portable FTIR analyzers. 18(2). 2 indexed citations
13.
Ma, Bei, et al.. (2012). Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates. Applied Physics Letters. 100(1). 16 indexed citations
14.
Ma, Bei, Hideto Miyake, Kazumasa Hiramatsu, & Hiroshi Harima. (2011). Stress analysis of a‐plane GaN grown on r‐plane sapphire substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2066–2068. 1 indexed citations
15.
Hu, Weiguo, Bei Ma, Dabing Li, et al.. (2010). Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions. Japanese Journal of Applied Physics. 49(3R). 35701–35701. 7 indexed citations
16.
Ma, Bei, Reina Miyagawa, Weiguo Hu, et al.. (2009). Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE. Journal of Crystal Growth. 311(10). 2899–2902. 18 indexed citations
17.
Li, Dabing, Bei Ma, Reina Miyagawa, et al.. (2009). Photoluminescence study of Si-doped a-plane GaN grown by MOVPE. Journal of Crystal Growth. 311(10). 2906–2909. 19 indexed citations
18.
Ma, Bei, Weiguo Hu, Hideto Miyake, & Kazumasa Hiramatsu. (2009). Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy. Applied Physics Letters. 95(12). 17 indexed citations
19.
Hu, Weiguo, Bei Ma, Dabing Li, Hideto Miyake, & Kazumasa Hiramatsu. (2009). In-plane electric field induced by polarization and lateral photovoltaic effect in a-plane GaN. Applied Physics Letters. 94(23). 8 indexed citations
20.
Ma, Bei, et al.. (2003). Characterizing batch reactions with in situ spectroscopic measurements, calorimetry and dynamic modeling. Journal of Chemometrics. 17(8-9). 470–479. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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