J. Lundsgaard Hansen

1.0k citations

51 papers · 831 indexed · h-index 17

Electrical and Electronic Engineering top 10%
Atomic and Molecular Physics, and Optics top 10%
Materials Chemistry
Biomedical Engineering
Computational Mechanics top 10%

Co-authors: A. Nylandsted Larsen Jacob Fage-Pedersen Nikolaj Zangenberg П. И. Гайдук S. Yu. Shiryaev Erik Vilain Thomsen D. Skarlatos Ole Hansen
Topics: Silicon and Solar Cell Technologies (23 papers)Silicon Nanostructures and Photoluminescence (16 papers)Semiconductor materials and interfaces (14 papers)
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Structural Biology
Journals: Physical Review Letters Physical review. B, Condensed matter Applied Physics Letters
Partner nations: Denmark Germany United States

In The Last Decade

J. Lundsgaard Hansen

51 papers receiving 802 citations

Peers

Countries citing papers authored by J. Lundsgaard Hansen

Since Specialization

Citations

This map shows the geographic impact of J. Lundsgaard Hansen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Lundsgaard Hansen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Lundsgaard Hansen more than expected).

Fields of papers citing papers by J. Lundsgaard Hansen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Lundsgaard Hansen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Lundsgaard Hansen. The network helps show where J. Lundsgaard Hansen may publish in the future.

Co-authorship network of co-authors of J. Lundsgaard Hansen

This figure shows the co-authorship network connecting the top 25 collaborators of J. Lundsgaard Hansen. A scholar is included among the top collaborators of J. Lundsgaard Hansen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Lundsgaard Hansen. J. Lundsgaard Hansen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Bias-Dependent Dynamics of Degradation and Recovery in Perovskite Solar Cells 2021 ·ACS Applied Energy Materials ·(unknown),Mark Khenkin,Damian Głowienka,Bhushan Ramesh Patil,(unknown),İlker Doğan,J. Lundsgaard Hansen,Till Leißner,Jacek Fiutowski,Horst‐Günter Rubahn,Brian Julsgaard,Péter Balling,Vida Turkovic,Yulia Galagan,Eugene A. Katz,Morten Madsen	16
2	Tin-based donors in SiSn alloys 2019 ·Journal of Applied Physics ·(unknown),(unknown),J. Lundsgaard Hansen,A. Nylandsted Larsen,Brian Julsgaard	2
3	Self-Diffusion in Amorphous Silicon by Local Bond Rearrangements 2018 ·Physical Review Letters ·(unknown),(unknown),(unknown),(unknown),Dominique Bougeard,Roman Böttger,J. Lundsgaard Hansen,A. Nylandsted Larsen,M. Posselt,H. Bracht	21
4	Irradiation-induced nano-voids in strained tin precipitates in silicon 2014 ·Applied Physics Letters ·П. И. Гайдук,J. Lundsgaard Hansen,A. Nylandsted Larsen	2
5	Evolution ofE-centers during the annealing of Sb-doped Si0.8Ge0.2 2011 ·Physical Review B ·Simo Kilpeläinen,Filip Tuomisto,J. Slotte,J. Lundsgaard Hansen,A. Nylandsted Larsen	15
6	Future aspects of X-ray emission from crystal undulators at channeling of positrons 2011 ·(unknown),D. Krambrich,W. Lauth,B. Buonomo,С.Б. Дабагов,G. Mazzitelli,L. Quintieri,J. Lundsgaard Hansen,E. Uggerhøj,B. Azadegan,(unknown),W. Wagner	4
7	X-ray emission from a crystal undulator - Experimental results at channeling of electrons 2011 ·(unknown),D. Krambrich,W. Lauth,J. Lundsgaard Hansen,E. Uggerhøj	8
8	Effect of Ge doping on the creation of luminescent radiation defects in MBE Si 2006 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·(unknown),Н. А. Соболев,Joaquim P. Leitão,M.C. Carmo,Rui N. Pereira,J. Lundsgaard Hansen,A. Nylandsted Larsen	3
9	Piezoresistance of silicon and strained Si0.9Ge0.1 2005 ·Sensors and Actuators A Physical ·(unknown),Ole Hansen,A. Nylandsted Larsen,J. Lundsgaard Hansen,(unknown),Erik Vilain Thomsen	45
10	Electrical deactivation by vacancy-impurity complexes in highly As-doped Si 2003 ·Physical review. B, Condensed matter ·V. Ranki,K. Saarinen,Jacob Fage-Pedersen,J. Lundsgaard Hansen,A. Nylandsted Larsen	29
11	Boron and phosphorus diffusion in strained and relaxed Si and SiGe 2003 ·Journal of Applied Physics ·Nikolaj Zangenberg,Jacob Fage-Pedersen,J. Lundsgaard Hansen,A. Nylandsted Larsen	90
12	Ge Self-Diffusion in EpitaxialSi1−xGexLayers 2001 ·Physical Review Letters ·Nikolaj Zangenberg,J. Lundsgaard Hansen,Jacob Fage-Pedersen,A. Nylandsted Larsen	118
13	Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density 2000 ·Thin Solid Films ·П. И. Гайдук,A. Nylandsted Larsen,J. Lundsgaard Hansen	41
14	Nanostructure of Ge deposited on Si(001): a study by XPS peak shape analysis and AFM 1999 ·Thin Solid Films ·Adam Cohen Simonsen,Marika Schleberger,S. Tougaard,J. Lundsgaard Hansen,A. Nylandsted Larsen	19
15	Surfactant-mediated growth of Si 1-x Sn x layers by molecular-beam epitaxy 1999 ·Applied Physics A ·(unknown),J. Lundsgaard Hansen,J. Chevallier,A. Nylandsted Larsen	8
16	Activation Enthalpy of Sb Diffusion in Biaxially Compressed SiGe Layers 1998 ·MRS Proceedings ·Andrej Kuznetsov,J. Cardenas,B. G. Svensson,A. Nylandsted Larsen,J. Lundsgaard Hansen	1
17	Effect of injection of Si self-interstitials on Sb diffusion inSi/Si1−xGex/Siheterostructures 1998 ·Physical review. B, Condensed matter ·A. Yu. Kuznetsov,Jan Grahn,J. Cardenas,B. G. Svensson,J. Lundsgaard Hansen,A. Nylandsted Larsen	6
18	Surface morphology of silicon–tin alloys grown by molecular beam epitaxy on Si and Si1−xGex substrates 1996 ·Applied Physics Letters ·(unknown),S. Yu. Shiryaev,J. Lundsgaard Hansen,A. Nylandsted Larsen	8
19	Thermal stability of highly Sb-doped molecular beam epitaxy silicon grown at low temperatures: Structural and electrical characterization 1994 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Erik Vilain Thomsen,Ole Hansen,(unknown),J. Lundsgaard Hansen,S. Yu. Shiryaev,Agnete Larsen	9
20	Structure of 3,6-bis(dimethylamino)-2,5-diisopropylthieno[3,2-b]thiophene 1992 ·Acta Crystallographica Section C Crystal Structure Communications ·Frank W. Heinemann,H. Hartung,J. Lundsgaard Hansen,(unknown),H. Matschiner	1

About J. Lundsgaard Hansen

J. Lundsgaard Hansen is a scholar working on Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films and Structural Biology, having authored 51 papers that have together received 831 indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (23 papers), Silicon Nanostructures and Photoluminescence (16 papers) and Semiconductor materials and interfaces (14 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (377 citations), Electrical and Electronic Engineering (638 citations) and Structural Biology (14 citations). J. Lundsgaard Hansen has collaborated with scholars based in Denmark, Germany and United States. Frequent co-authors include A. Nylandsted Larsen, Jacob Fage-Pedersen, Nikolaj Zangenberg, П. И. Гайдук, S. Yu. Shiryaev, Erik Vilain Thomsen, D. Skarlatos, Ole Hansen, A. Claverie and A. Kanjilal. Their work appears in journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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