Y.D. Chan

428 total citations
48 papers, 332 citations indexed

About

Y.D. Chan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Y.D. Chan has authored 48 papers receiving a total of 332 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Y.D. Chan's work include Semiconductor materials and devices (41 papers), Advancements in Semiconductor Devices and Circuit Design (32 papers) and Integrated Circuits and Semiconductor Failure Analysis (24 papers). Y.D. Chan is often cited by papers focused on Semiconductor materials and devices (41 papers), Advancements in Semiconductor Devices and Circuit Design (32 papers) and Integrated Circuits and Semiconductor Failure Analysis (24 papers). Y.D. Chan collaborates with scholars based in United States, China and Poland. Y.D. Chan's co-authors include Osama O. Awadelkarim, S.J. Fonash, C.R. Viswanathan, Tomasz Brożek, Stephen J. Fonash, Murat Okandan, Kitt Reinhardt, J. Werking, Zhitang Song and Zhen Xu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Y.D. Chan

40 papers receiving 315 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Y.D. Chan United States 11 328 50 28 23 13 48 332
R. Kies France 10 317 1.0× 84 1.7× 19 0.7× 33 1.4× 7 0.5× 21 323
L. Prabhu United States 10 242 0.7× 72 1.4× 27 1.0× 28 1.2× 4 0.3× 17 256
N. Zamani United States 5 364 1.1× 127 2.5× 17 0.6× 72 3.1× 8 0.6× 12 391
T. Grabolla Germany 10 224 0.7× 63 1.3× 9 0.3× 42 1.8× 18 1.4× 31 263
Mats O. Andersson Sweden 12 340 1.0× 79 1.6× 30 1.1× 97 4.2× 5 0.4× 20 358
Elke Erben Germany 12 347 1.1× 170 3.4× 44 1.6× 31 1.3× 5 0.4× 31 364
Paul Vande Voorde United States 11 537 1.6× 84 1.7× 24 0.9× 103 4.5× 5 0.4× 25 555
Arito Ogawa Japan 10 404 1.2× 118 2.4× 42 1.5× 93 4.0× 9 0.7× 30 421
K. Onishi United States 11 374 1.1× 70 1.4× 42 1.5× 39 1.7× 5 0.4× 18 380
Mike Oertel Germany 6 306 0.9× 280 5.6× 38 1.4× 19 0.8× 15 1.2× 10 348

Countries citing papers authored by Y.D. Chan

Since Specialization
Citations

This map shows the geographic impact of Y.D. Chan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y.D. Chan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y.D. Chan more than expected).

Fields of papers citing papers by Y.D. Chan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y.D. Chan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y.D. Chan. The network helps show where Y.D. Chan may publish in the future.

Co-authorship network of co-authors of Y.D. Chan

This figure shows the co-authorship network connecting the top 25 collaborators of Y.D. Chan. A scholar is included among the top collaborators of Y.D. Chan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y.D. Chan. Y.D. Chan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Li, Juntao, Yangyang Xia, Bo Liu, et al.. (2016). Direct evidence of reactive ion etching induced damages in Ge2Sb2Te5 based on different halogen plasmas. Applied Surface Science. 378. 163–166. 21 indexed citations
2.
3.
Brożek, Tomasz, Y.D. Chan, & C.R. Viswanathan. (2005). Threshold voltage degradation in plasma damaged cmos transistors - role of electron and hole traps related to charging damage. 1627–1630. 2 indexed citations
4.
5.
Bersuker, G., et al.. (2002). Short loop monitor for charging damage in implantation process. 77–80. 1 indexed citations
6.
7.
8.
Current, Michael, et al.. (2002). A study of wafer charging with CHARM and SPIDER monitors. 61–64. 1 indexed citations
9.
10.
Brożek, Tomasz, et al.. (2002). LDD charge pumping-direct measurement of interface states in the overlap region. 45–48. 2 indexed citations
11.
Brożek, Tomasz, Y.D. Chan, & C.R. Viswanathan. (1998). Gate oxide leakage due to temperature accelerated degradation under plasma charging conditions. Microelectronics Reliability. 38(1). 73–79. 7 indexed citations
12.
Brożek, Tomasz, et al.. (1998). Charge injection using gate-induced-drain-leakage current for characterization of plasma edge damage in CMOS devices. IEEE Transactions on Semiconductor Manufacturing. 11(2). 211–216. 6 indexed citations
13.
Brożek, Tomasz, Y.D. Chan, & C.R. Viswanathan. (1996). Enhanced Hole Trapping in MOS Devices Damaged by Plasma-Induced Charging. European Solid-State Device Research Conference. 365–368. 1 indexed citations
14.
Okandan, Murat, et al.. (1996). Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure. IEEE Electron Device Letters. 17(8). 388–390. 10 indexed citations
15.
Brożek, Tomasz, Y.D. Chan, & C.R. Viswanathan. (1996). Generation of Hole Traps in Silicon Dioxide Under Fowler-Nordheim Stress. MRS Proceedings. 428. 1 indexed citations
16.
Brożek, Tomasz, Y.D. Chan, & C.R. Viswanathan. (1996). Temperature accelerated gate oxide degradation under plasma-induced charging. IEEE Electron Device Letters. 17(6). 288–290. 7 indexed citations
17.
Brożek, Tomasz, Y.D. Chan, & C.R. Viswanathan. (1995). Plasma Etching Induced Gate Oxide Leakage. European Solid-State Device Research Conference. 255–258. 1 indexed citations
18.
Awadelkarim, Osama O., et al.. (1994). Electrical properties of contact etched p-Si: A comparison between magnetically enhanced and conventional reactive ion etching. Journal of Applied Physics. 76(4). 2270–2278. 26 indexed citations
19.
Chan, Y.D.. (1994). Using SEMATECH Electrical Test Structures in Assessing Plasma Induced Damage in Poly Etching. Japanese Journal of Applied Physics. 33(7S). 4458–4458. 20 indexed citations
20.
Awadelkarim, Osama O., et al.. (1993). Creation of deep gap states in Si during Cl2 or HBr plasma etch exposures. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 11(4). 1332–1336. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by R. Kies Breakdown of academic impact, for papers by L. Prabhu Breakdown of academic impact, for papers by N. Zamani Breakdown of academic impact, for papers by T. Grabolla Breakdown of academic impact, for papers by Mats O. Andersson Breakdown of academic impact, for papers by Elke Erben Breakdown of academic impact, for papers by Paul Vande Voorde Breakdown of academic impact, for papers by Arito Ogawa Breakdown of academic impact, for papers by K. Onishi Breakdown of academic impact, for papers by Mike Oertel
Rankless by CCL
2026