S.C. Chen

508 citations

22 papers · 273 indexed · h-index 10

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Silicon and Solar Cell Technologies
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in ⓘ

Electrical and Electronic Engineering 22
- Semiconductor materials and devices 21
- Advancements in Semiconductor Devices and Circuit Design 17
- Integrated Circuits and Semiconductor Failure Analysis 10
- Ferroelectric and Negative Capacitance Devices 8
- Silicon and Solar Cell Technologies 2
- Silicon Carbide Semiconductor Technologies 2
Electronic, Optical and Magnetic Materials 2
- Copper Interconnects and Reliability 2

Co-authors: Yinxi Jin (13 shared papers)M.S. Liang (10 shared papers)H.J. Tao (8 shared papers)C.C. Chen (4 shared papers)Tuo‐Hung Hou (5 shared papers)C.H. Diaz (3 shared papers)Yunfei Hou (8 shared papers)T.L. Lee (2 shared papers)
Journals: IEEE Electron Device Letters (7 papers)IEEE Transactions on Electron Devices (2 papers)IEEE Transactions on Device and Materials Reliability (1 paper)ECS Meeting Abstracts (1 paper)
Partner nations: Taiwan United States Singapore

In The Last Decade

S.C. Chen

22 papers receiving 264 citations

Peers

Countries citing papers authored by S.C. Chen

Since Specialization

Citations

This map shows the geographic impact of S.C. Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.C. Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.C. Chen more than expected).

Fields of papers citing papers by S.C. Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.C. Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.C. Chen. The network helps show where S.C. Chen may publish in the future.

Co-authors

The 25 scholars most cited alongside S.C. Chen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S.C. Chen Line = papers co-authored together S.C. Chen links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 22 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65nm high-performance strained-Si device application Chien‐Hao Chen, T.L. Lee, Tuo‐Hung Hou, C.L. Chen, C.C. Chen, J. Hsu, Kaixuan Cheng, Yu‐Jing Chiu, H.J. Tao, Yinxi Jin, C.H. Diaz, S.C. Chen, M.S. Liang	2004	77
2	Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide IEEE Electron Device Letters ·Wei-Ting Wu, Bing‐Yue Tsui, Y.P. Huang, Fan-Chun Hsieh, M.C. Chen, Yunfei Hou, Yinxi Jin, H.J. Tao, S.C. Chen, M.S. Liang	2006	26
3	Determination of deep ultrathin equivalent oxide thickness (EOT) from measuring flat-band C-V curve IEEE Transactions on Electron Devices ·Chang‐Hsiao Chen, Y.K. Fang, Ching-Fen Yang, S.F. Ting, Yong-Shiuan Tsair, M.F. Wang, L.G. Yao, S.C. Chen, C.H. Yu, Liang Meng	2002	22
4	Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion IEEE Electron Device Letters ·Chang‐Hsiao Chen, Y.K. Fang, Chih-Wei Yang, S.F. Ting, Yong-Shiuan Tsair, Miao Yu, Tuo‐Hung Hou, M.F. Wang, S.C. Chen, Chengpu Yu, M.S. Liang	2001	18
5	High performance tantalum carbide metal gate stacks for nMOSFET application Yunfei Hou, Fan-Yu Yen, P.F. Hsu, Vincent S. Chang, Phyllis Shi Ya Lim, C.L. Hung, L.G. Yao, Jack Jiang, H.J. Lin, Yinxi Jin, S.M. Jang, H.J. Tao, S.C. Chen, Mong Liang	2006	17
6	Advanced Dual Metal Gate MOSFETs with High-k Dielectric for CMOS Application P.F. Hsu, Jian-Yuan Chiou, Kai Yin, Jae‐Joon Lee, R.L. Hwang, Yuanwei Jin, S. M. Chang, H.J. Tao, S.C. Chen, Mong Liang, T.P. Ma, Yunfei Hou, Fan-Yu Yen, Vincent S. Chang, Phyllis Shi Ya Lim, C.L. Hung, L.G. Yao, Ji Jiang, Huey‐Jiuan Lin	2006	15
7	The physical mechanism investigation of AC TDDB behavior in advanced gate stack C.L. Chen, S. W. Chang, S.C. Chen, Y.-H. Lee, Y. W. Lee, Dongsheng Huang, J.R. Shih, Kai-Bin Wu	2014	15
8	Impact of STI on the Reliability of Narrow-Width pMOSFETs With Advanced ALD N/O Gate Stack IEEE Transactions on Device and Materials Reliability ·Steve S. Chung, Chih‐Hua Yeh, Hsien-Tsung Feng, Chao‐Sung Lai, J.-J. Yang, C.C. Chen, Yinxi Jin, S.C. Chen, Mong Liang	2006	13
9	High-Temperature Stable $\hbox{Ir}_{x}\hbox{Si}$ Gates With High Work Function on HfSiON p-MOSFETs IEEE Transactions on Electron Devices ·B.F. Hung, Mong-Song Liang, Chao‐Hsin Wu, Albert Chin, S. J. Wang, Fan-Yu Yen, Y.T. Hou, Yinxi Jin, H.J. Tao, S.C. Chen	2007	11
10	High-Temperature Stable HfLaON p-MOSFETs With High-Work-Function $\hbox{Ir}_{3}\hbox{Si}$ Gate IEEE Electron Device Letters ·Chien‐Hung Wu, B.F. Hung, Albert Chin, S. J. Wang, X.P. Wang, M.-F. Li, Chunxiang Zhu, Fan-Yu Yen, Yunfei Hou, Yinxi Jin, H.J. Tao, S.C. Chen, M.S. Liang	2007	11
11	High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies IEEE Electron Device Letters ·Chang‐Hsiao Chen, Y.K. Fang, Chih-Wei Yang, S.F. Ting, Yong-Shiuan Tsair, M.F. Wang, Yih‐Jyh Lin, Miao Yu, S.C. Chen, Chengpu Yu, M.S. Liang	2001	8
12	HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide IEEE Electron Device Letters ·Desheng Wu, B.F. Hung, Albert Chin, S.J. Wang, Fan-Yu Yen, Yunfei Hou, Yinxi Jin, H.J. Tao, S.C. Chen, M.S. Liang	2006	8
13	Channel Stress Modulation and Pattern Loading Effect Minimization of Milli-Second Super Anneal for Sub-65nm High Performance SiGe CMOS Chien‐Hao Chen, T. Lee, Ken Goto, C.H. Diaz, S.C. Chen, Mong Liang, C. F. Nieh, Da-Wei Lin, Kai‐Wei Ku, J.C. Sheu, Maosheng Yu, L. T. Wang, H.H. Lin, H. H. Chang	2006	7
14	Direct determination of interface and bulk traps in stacked HfO/sub 2/ dielectrics using charge pumping method Tuo‐Hung Hou, M.F. Wang, Kristiina Mai, Yih‐Jyh Lin, Ming Yang, L.G. Yao, Yinxi Jin, S.C. Chen, Mong Liang	2004	5
15	The impact of STI induced reliabilities for scaled p-MOSFET in an advanced multiple oxide CMOS technology Steve S. Chung, Chih‐Hua Yeh, Sirui Feng, Chao‐Sung Lai, J.-J. Yang, C.C. Chen, Yinxi Jin, S.C. Chen, M.S. Liang	2004	5
16	HfSiON n-MOSFETs Using Low-Work Function$hboxHfSi_x$Gate IEEE Electron Device Letters ·C.H. Wu, B.F. Hung, Albert Chin, S.J. Wang, Fan-Yu Yen, Yunfei Hou, Yinxi Jin, H.J. Tao, S.C. Chen, Mong Liang	2006	4
17	Effective Work Function Engineering of $\hbox{Ta}_{x}\hbox{C}_{y}$ Metal Gate on Hf-Based Dielectrics IEEE Electron Device Letters ·Fan-Yu Yen, C.L. Hung, Yunfei Hou, P.F. Hsu, Vincent S. Chang, Phyllis Shi Ya Lim, L.G. Yao, Jack Jiang, H.J. Lin, C.C. Chen, Yinxi Jin, S.M. Jang, H.J. Tao, S.C. Chen, M.S. Liang	2007	3
18	Relaxation-Free Strained SiGe with Super Anneal for 32nm High Performance PMOS and beyond Ming Yu, J. H. Li, H.H. Lin, C.H. Chen, Kai‐Wei Ku, C. F. Nieh, H. Hisa, Yu‐Miin Sheu, Chao‐Hsu Tsai, Y.L. Wang, Hui-Chen Chu, Huijuan Cheng, T.L. Lee, S.C. Chen, M.S. Liang	2006	3
19	Effects of base oxide in HfSiO/SiO/sub 2/ high-k gate stacks W.-H. Wu, M.C. Chen, M.F. Wang, Tuo‐Hung Hou, L.G. Yao, Yinxi Jin, S.C. Chen, Mong Liang	2004	2
20	Base oxide scaling limit of thermally-enhanced remote plasma nitridation (TE-RPN) process for ultra-thin gate dielectric formation Miao Yu, H.T. Huang, Chang‐Hsiao Chen, M.F. Wang, Tuo‐Hung Hou, Yih‐Jyh Lin, S.M. Jang, C.H. Diaz, J.Y.-C. Sun, Y.K. Fang, S.C. Chen, Chengpu Yu, M.S. Liang	2002	1

About S.C. Chen

S.C. Chen is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Materials Chemistry and Infectious Diseases, having authored 22 papers that have together received 273 indexed citations. Recurring topics across this work include Semiconductor materials and devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers), Ferroelectric and Negative Capacitance Devices (8 papers), Semiconductor materials and interfaces (3 papers), Silicon and Solar Cell Technologies (2 papers), Copper Interconnects and Reliability (2 papers) and Silicon Carbide Semiconductor Technologies (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (263 citations), Atomic and Molecular Physics, and Optics (37 citations), Materials Chemistry (39 citations), Electronic, Optical and Magnetic Materials (12 citations) and Condensed Matter Physics (6 citations). S.C. Chen has collaborated with scholars based in Taiwan, United States and Singapore. Frequent co-authors include Yinxi Jin, M.S. Liang, H.J. Tao, C.C. Chen, Tuo‐Hung Hou, C.H. Diaz, Yunfei Hou, T.L. Lee, Chien‐Hao Chen and Yu‐Jing Chiu. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Device and Materials Reliability and ECS Meeting Abstracts.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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