S.C. Chen

508 total citations
22 papers, 273 citations indexed

About

S.C. Chen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, S.C. Chen has authored 22 papers receiving a total of 273 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 2 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in S.C. Chen's work include Semiconductor materials and devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). S.C. Chen is often cited by papers focused on Semiconductor materials and devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). S.C. Chen collaborates with scholars based in Taiwan, United States and Singapore. S.C. Chen's co-authors include Yinxi Jin, M.S. Liang, H.J. Tao, Tuo‐Hung Hou, C.C. Chen, Yunfei Hou, C.H. Diaz, Yu‐Jing Chiu, T.L. Lee and Chien‐Hao Chen and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and IEEE Transactions on Device and Materials Reliability.

In The Last Decade

S.C. Chen

22 papers receiving 264 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S.C. Chen Taiwan 10 263 39 37 20 12 22 273
Dimitris P. Ioannou United States 11 308 1.2× 34 0.9× 29 0.8× 16 0.8× 11 0.9× 33 312
H.J. Tao Taiwan 9 199 0.8× 28 0.7× 30 0.8× 18 0.9× 9 0.8× 20 206
G. Boccardi Belgium 10 213 0.8× 33 0.8× 40 1.1× 45 2.3× 19 1.6× 33 222
Ching-Sung Ho China 6 268 1.0× 33 0.8× 16 0.4× 43 2.1× 9 0.8× 7 284
Wei Yip Loh Singapore 9 332 1.3× 68 1.7× 63 1.7× 46 2.3× 18 1.5× 27 348
Wolfgang Gös Austria 8 393 1.5× 64 1.6× 41 1.1× 13 0.7× 8 0.7× 15 407
Masakazu Shimaya Japan 9 347 1.3× 58 1.5× 37 1.0× 12 0.6× 7 0.6× 30 353
G. Charitat France 10 343 1.3× 36 0.9× 28 0.8× 22 1.1× 16 1.3× 44 349
Oliver Blank Austria 8 388 1.5× 43 1.1× 32 0.9× 8 0.4× 20 1.7× 14 396
J. Mogab United States 8 209 0.8× 26 0.7× 26 0.7× 19 0.9× 18 1.5× 12 211

Countries citing papers authored by S.C. Chen

Since Specialization
Citations

This map shows the geographic impact of S.C. Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.C. Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.C. Chen more than expected).

Fields of papers citing papers by S.C. Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.C. Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.C. Chen. The network helps show where S.C. Chen may publish in the future.

Co-authorship network of co-authors of S.C. Chen

This figure shows the co-authorship network connecting the top 25 collaborators of S.C. Chen. A scholar is included among the top collaborators of S.C. Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.C. Chen. S.C. Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Chang, S. W., et al.. (2014). The physical mechanism investigation of AC TDDB behavior in advanced gate stack. 5B.5.1–5B.5.5. 15 indexed citations
3.
Hou, Yunfei, Vincent S. Chang, C.C. Chen, et al.. (2007). Effective Work Function Engineering of $\hbox{Ta}_{x}\hbox{C}_{y}$ Metal Gate on Hf-Based Dielectrics. IEEE Electron Device Letters. 28(3). 201–203. 3 indexed citations
4.
Wu, Chao‐Hsin, et al.. (2007). High-Temperature Stable $\hbox{Ir}_{x}\hbox{Si}$ Gates With High Work Function on HfSiON p-MOSFETs. IEEE Transactions on Electron Devices. 54(2). 257–261. 11 indexed citations
5.
Wu, Chien‐Hung, Albert Chin, X.P. Wang, et al.. (2007). High-Temperature Stable HfLaON p-MOSFETs With High-Work-Function $\hbox{Ir}_{3}\hbox{Si}$ Gate. IEEE Electron Device Letters. 28(4). 292–294. 11 indexed citations
6.
7.
Chang, Vincent S., Yunfei Hou, Huey‐Jiuan Lin, et al.. (2006). Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD). ECS Meeting Abstracts. MA2005-02(12). 483–483. 1 indexed citations
8.
Tsui, Bing‐Yue, Yunfei Hou, Yinxi Jin, et al.. (2006). Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide. IEEE Electron Device Letters. 27(5). 399–401. 26 indexed citations
9.
Yin, Kai, Jae‐Joon Lee, Yuanwei Jin, et al.. (2006). Advanced Dual Metal Gate MOSFETs with High-k Dielectric for CMOS Application. 11–12. 15 indexed citations
10.
Hou, Yunfei, Vincent S. Chang, Yinxi Jin, et al.. (2006). High performance tantalum carbide metal gate stacks for nMOSFET application. 31–34. 17 indexed citations
11.
Wu, Desheng, Albert Chin, Yunfei Hou, et al.. (2006). HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide. IEEE Electron Device Letters. 27(6). 454–456. 8 indexed citations
12.
13.
Chin, Albert, Yunfei Hou, Yinxi Jin, et al.. (2006). HfSiON n-MOSFETs Using Low-Work Function$hboxHfSi_x$Gate. IEEE Electron Device Letters. 27(9). 762–764. 4 indexed citations
14.
Chung, Steve S., Chih‐Hua Yeh, Chao‐Sung Lai, et al.. (2006). Impact of STI on the Reliability of Narrow-Width pMOSFETs With Advanced ALD N/O Gate Stack. IEEE Transactions on Device and Materials Reliability. 6(1). 95–101. 13 indexed citations
15.
Hou, Tuo‐Hung, et al.. (2004). Effects of base oxide in HfSiO/SiO/sub 2/ high-k gate stacks. 50. 25–28. 2 indexed citations
16.
Chen, Chien‐Hao, T.L. Lee, Tuo‐Hung Hou, et al.. (2004). Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65nm high-performance strained-Si device application. 56–57. 77 indexed citations
17.
18.
Yu, Miao, Chang‐Hsiao Chen, Tuo‐Hung Hou, et al.. (2002). Base oxide scaling limit of thermally-enhanced remote plasma nitridation (TE-RPN) process for ultra-thin gate dielectric formation. 35. 179–182. 1 indexed citations
19.
Chen, Chang‐Hsiao, Y.K. Fang, Chih-Wei Yang, et al.. (2001). Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion. IEEE Electron Device Letters. 22(8). 378–380. 18 indexed citations
20.
Chen, Chang‐Hsiao, Y.K. Fang, Chih-Wei Yang, et al.. (2001). High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies. IEEE Electron Device Letters. 22(6). 260–262. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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