Greg Heuss

409 total citations
13 papers, 315 citations indexed

About

Greg Heuss is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Greg Heuss has authored 13 papers receiving a total of 315 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Greg Heuss's work include Semiconductor materials and devices (13 papers), Semiconductor materials and interfaces (10 papers) and Copper Interconnects and Reliability (4 papers). Greg Heuss is often cited by papers focused on Semiconductor materials and devices (13 papers), Semiconductor materials and interfaces (10 papers) and Copper Interconnects and Reliability (4 papers). Greg Heuss collaborates with scholars based in United States and South Korea. Greg Heuss's co-authors include Veena Misra, Huicai Zhong, You-Seok Suh, Dim‐Lee Kwong, Choongho Lee, Jae Hoon Lee, Dae-Gyu Park, Jaehoon Lee and Gregory N. Parsons and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Electron Device Letters.

In The Last Decade

Greg Heuss

12 papers receiving 291 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Greg Heuss United States 11 298 90 61 58 42 13 315
S. Shamuilia Belgium 11 348 1.2× 225 2.5× 77 1.3× 97 1.7× 17 0.4× 16 389
M. Bude United States 4 392 1.3× 217 2.4× 42 0.7× 55 0.9× 19 0.5× 5 409
K. Onishi United States 11 374 1.3× 70 0.8× 39 0.6× 42 0.7× 23 0.5× 18 380
V. Dhandapani United States 6 555 1.9× 128 1.4× 114 1.9× 43 0.7× 42 1.0× 10 575
P. Sivasubramani United States 11 424 1.4× 245 2.7× 63 1.0× 64 1.1× 17 0.4× 26 445
Katsunori Onishi United States 5 358 1.2× 118 1.3× 37 0.6× 52 0.9× 27 0.6× 10 369
L.B. La United States 7 399 1.3× 170 1.9× 48 0.8× 42 0.7× 32 0.8× 13 413
Y. Ma United States 9 307 1.0× 147 1.6× 37 0.6× 37 0.6× 11 0.3× 17 320
J.H. Sim United States 15 693 2.3× 126 1.4× 75 1.2× 39 0.7× 13 0.3× 45 707
Elke Erben Germany 12 347 1.2× 170 1.9× 31 0.5× 44 0.8× 9 0.2× 31 364

Countries citing papers authored by Greg Heuss

Since Specialization
Citations

This map shows the geographic impact of Greg Heuss's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Greg Heuss with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Greg Heuss more than expected).

Fields of papers citing papers by Greg Heuss

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Greg Heuss. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Greg Heuss. The network helps show where Greg Heuss may publish in the future.

Co-authorship network of co-authors of Greg Heuss

This figure shows the co-authorship network connecting the top 25 collaborators of Greg Heuss. A scholar is included among the top collaborators of Greg Heuss based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Greg Heuss. Greg Heuss is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
Suh, You-Seok, Greg Heuss, & Veena Misra. (2004). Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(1). 175–179. 15 indexed citations
2.
Suh, You-Seok, Greg Heuss, Jae Hoon Lee, & Veena Misra. (2003). Effect of the composition on the electrical properties of TaSi/sub x/Ny metal gate electrodes. IEEE Electron Device Letters. 24(7). 439–441. 19 indexed citations
3.
Lee, Jae Hoon, et al.. (2003). Tunable work function dual metal gate technology for bulk and non-bulk CMOS. 359–362. 28 indexed citations
4.
Suh, You-Seok, et al.. (2003). Thermal Stability of TaSi[sub x]N[sub y] Films Deposited by Reactive Sputtering on SiO[sub 2]. Journal of The Electrochemical Society. 150(5). F79–F79. 13 indexed citations
5.
6.
Zhong, Huicai, et al.. (2002). Properties of Ru-Ta alloys as gate electrodes for NMOS and PMOS silicon devices. 20.5.1–20.5.4. 30 indexed citations
7.
Suh, You-Seok, Greg Heuss, & Veena Misra. (2002). Electrical characteristics of TaSixNy/SiO2/Si structures by Fowler–Nordheim current analysis. Applied Physics Letters. 80(8). 1403–1405. 26 indexed citations
8.
Suh, You-Seok, Greg Heuss, Jaehoon Lee, & Veena Misra. (2002). The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors. MRS Proceedings. 716.
9.
Zhong, Huicai, et al.. (2001). Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics. Journal of Electronic Materials. 30(12). 1493–1498. 16 indexed citations
10.
Misra, Veena, Greg Heuss, & Huicai Zhong. (2001). Use of metal–oxide–semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2. Applied Physics Letters. 78(26). 4166–4168. 57 indexed citations
11.
Zhong, Huicai, et al.. (2001). Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics. Applied Physics Letters. 78(8). 1134–1136. 52 indexed citations
12.
Zhong, Huicai, et al.. (2001). Promising Gate Stacks with Ru & RuO2 Gate Electrodes and Y-silicate Dielectrics. MRS Proceedings. 670. 3 indexed citations
13.
Zhong, Huicai, Greg Heuss, & Veena Misra. (2000). Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS. IEEE Electron Device Letters. 21(12). 593–595. 46 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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