Steven Hung

601 total citations
12 papers, 450 citations indexed

About

Steven Hung is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Steven Hung has authored 12 papers receiving a total of 450 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 3 papers in Mechanics of Materials and 2 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Steven Hung's work include Semiconductor materials and devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). Steven Hung is often cited by papers focused on Semiconductor materials and devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). Steven Hung collaborates with scholars based in United States, Germany and Belgium. Steven Hung's co-authors include J. F. Gibbons, Ant Ural, Hongjie Dai, Jien Cao, Erhan Yenilmez, Yoshio Nishi, Yiming Li, Marco Rolandi, W. Ray Kim and David J. Mann and has published in prestigious journals such as Nano Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Steven Hung

12 papers receiving 433 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Steven Hung United States 4 361 184 148 49 36 12 450
N.S. Lee South Korea 3 285 0.8× 77 0.4× 114 0.8× 61 1.2× 20 0.6× 4 316
Hiroo Hongo Japan 10 276 0.8× 117 0.6× 108 0.7× 68 1.4× 32 0.9× 27 350
Anatoly G. Kolosko Russia 11 247 0.7× 139 0.8× 105 0.7× 75 1.5× 13 0.4× 71 317
Lewis M. Gomez Puerto Rico 7 218 0.6× 112 0.6× 178 1.2× 78 1.6× 7 0.2× 12 318
Shih‐wei Chang United States 6 233 0.6× 215 1.2× 268 1.8× 43 0.9× 21 0.6× 9 344
Sojung Kang South Korea 7 330 0.9× 179 1.0× 59 0.4× 48 1.0× 9 0.3× 8 392
Fan Ming United States 5 299 0.8× 148 0.8× 120 0.8× 50 1.0× 8 0.2× 6 333
Junghun Choi South Korea 9 297 0.8× 193 1.0× 99 0.7× 87 1.8× 20 0.6× 18 374
Chang Niu United States 10 241 0.7× 293 1.6× 82 0.6× 68 1.4× 6 0.2× 45 429
Amirmohammad Zare United States 5 197 0.5× 119 0.6× 67 0.5× 82 1.7× 25 0.7× 7 323

Countries citing papers authored by Steven Hung

Since Specialization
Citations

This map shows the geographic impact of Steven Hung's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Steven Hung with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Steven Hung more than expected).

Fields of papers citing papers by Steven Hung

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Steven Hung. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Steven Hung. The network helps show where Steven Hung may publish in the future.

Co-authorship network of co-authors of Steven Hung

This figure shows the co-authorship network connecting the top 25 collaborators of Steven Hung. A scholar is included among the top collaborators of Steven Hung based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Steven Hung. Steven Hung is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

12 of 12 papers shown
1.
Colombeau, B., et al.. (2021). Source/Drain Extension Doping Engineering for Variability Suppression and Performance Enhancement in 3-nm Node FinFETs. IEEE Transactions on Electron Devices. 68(3). 1352–1357. 15 indexed citations
2.
Bao, Ruqiang, Steven Hung, Miaomiao Wang, et al.. (2018). Novel Materials and Processes in Replacement Metal Gate for Advanced CMOS Technology. 11.4.1–11.4.4. 8 indexed citations
3.
Chen, Michael S., et al.. (2013). Novel metal gates for high κ applications. Journal of Applied Physics. 113(3). 3 indexed citations
4.
Fu, Xinyu, Kun Xu, Yu Lei, et al.. (2012). Replacement metal gate extendible to 11 nm technology. 81–82. 1 indexed citations
5.
Liu, Guojun, Zhigang Xie, Zhenbin Ge, et al.. (2010). High-k/metal gate stacks in gate first and replacement gate schemes. 256–259. 11 indexed citations
6.
Arghavani, Reza, et al.. (2008). Implementation of High-k / Metal Gate in High-Volume Manufacturing. ECS Transactions. 13(1). 131–142. 1 indexed citations
7.
Ahmed, Khaled, G. Conti, Steven Hung, et al.. (2008). Enabling Effective Work Function Tuning by RF-PVD Metal Oxide on High-k Gate Dielectric. ECS Transactions. 13(1). 143–150. 2 indexed citations
8.
Li, Mingfu, X.P. Wang, H.Y. Yu, et al.. (2006). A novel high-k gate dielectric HfLaO for next generation CMOS technology. National University of Singapore. 25. 372–375. 3 indexed citations
9.
Ye, Mengqi, et al.. (2006). Study of metal gate deposition by magnetron sputtering. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(5). 2214–2219. 1 indexed citations
10.
Li, Yiming, David J. Mann, Marco Rolandi, et al.. (2004). Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method. Nano Letters. 4(2). 317–321. 402 indexed citations
11.
Ahmed, Khaled, Shreyas S. Kher, Steven Hung, et al.. (2004). Tunable Workfunction with TaN Metal Gate on HfO2-HfxSiyO Dielectrics. MRS Proceedings. 811. 2 indexed citations
12.
Hung, Steven, et al.. (1994). Non-Contact Temperature Measurement with Infrared Interferometry. MRS Proceedings. 340. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026