A. E. Belyaev

1.9k citations

182 papers · 1.5k · h-index 21

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
- Semiconductor materials and interfaces

Papers in

Atomic and Molecular Physics, and Optics 107
- Semiconductor Quantum Structures and Devices 73
- Semiconductor materials and interfaces 42
- Quantum and electron transport phenomena 21
Electrical and Electronic Engineering 94
- Semiconductor materials and devices 28

Co-authors: S. А. Vitusevich (63 shared papers)N. Klein (30 shared papers)Serhiy Danylyuk (32 shared papers)V.P. Kladko (35 shared papers)Р. В. Конакова (53 shared papers)M. V. Petrychuk (24 shared papers)S. Ostapenko (7 shared papers)V. A. Kochelap (11 shared papers)
Journals: Journal of Applied Physics (15 papers)Applied Physics Letters (13 papers)Physical review. B, Condensed matter (5 papers)Nanotechnology (5 papers)Nanoscale Research Letters (5 papers)
Partner nations: Ukraine Germany United States

In The Last Decade

A. E. Belyaev

158 papers receiving 1.4k citations

Peers

Countries citing papers authored by A. E. Belyaev

Since Specialization

Citations

This map shows the geographic impact of A. E. Belyaev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. E. Belyaev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. E. Belyaev more than expected).

Fields of papers citing papers by A. E. Belyaev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. E. Belyaev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. E. Belyaev. The network helps show where A. E. Belyaev may publish in the future.

Co-authors

The 25 scholars most cited alongside A. E. Belyaev, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. E. Belyaev Line = papers co-authored together A. E. Belyaev links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 182 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Crack detection and analyses using resonance ultrasonic vibrations in full-size crystalline silicon wafers Applied Physics Letters ·A. E. Belyaev, O. Polupan, William J. Dallas, S. Ostapenko, Daniel Baldwin Hess, J. Wohlgemuth	2006	61
2	Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants Materials Science and Engineering C ·Oleksandr Gryshkov, N.I. Klyui, V.P. Temchenko, Vitalii S. Kyselov, Anamika Chatterjee, A. E. Belyaev, Lothar Lauterboeck, Dmytro Iarmolenko, Birgit Glasmacher	2016	58
3	Effects ofγ-irradiation on AlGaN/GaN-based HEMTs physica status solidi (a) ·S. А. Vitusevich, N. Klein, A. E. Belyaev, Serhiy Danylyuk, M. V. Petrychuk, Р. В. Конакова, A. M. Kurakin, A. E. Rengevich, A.Yu. Avksentyev, B. A. Danilchenko, V. Tilak, J. Smart, A. Vertiatchikh, L.F. Eastman	2003	51
4	Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·C. T. Foxon, С. В. Новиков, A. E. Belyaev, Lixia Zhao, O. Makarovsky, D. J. Walker, L. Eaves, R.I Dykeman, Serhiy Danylyuk, S. А. Vitusevich, Menno J. Kappers, J. S. Barnard, C. J. Humphreys	2003	45
5	Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation Journal of Applied Physics ·A. M. Kurakin, S. А. Vitusevich, Serhiy Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, B. A. Danilchenko, Р. В. Конакова, A. E. Belyaev	2008	43
6	Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels Applied Physics Letters ·S. А. Vitusevich, Serhiy Danylyuk, N. Klein, M. V. Petrychuk, A.Yu. Avksentyev, V. N. Sokolov, V. A. Kochelap, A. E. Belyaev, V. Tilak, J. Smart, A. Vertiatchikh, L.F. Eastman	2003	42
7	Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures Journal of Applied Physics ·A. M. Kurakin, S. А. Vitusevich, Serhiy Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, А. В. Наумов, A. E. Belyaev	2009	37
8	Resonance ultrasonic vibration diagnostics of elastic stress in full-size silicon wafers Semiconductor Science and Technology ·A. E. Belyaev, O. Polupan, S. Ostapenko, Daniel Baldwin Hess, J.P. Kalejs	2006	36
9	Substrate effects on the strain relaxation in GaN/AlN short-period superlattices Nanoscale Research Letters ·V.P. Kladko, (unknown), P. M. Lytvyn, Oleksandr Yefanov, N. V. Safriuk, A. E. Belyaev, Yuriy I. Mazur, E. A. DeCuir, Morgan E. Ware, Gregory J. Salamo	2012	36
10	Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate Journal of Applied Physics ·V.P. Kladko, О.F. Kolomys, M. V. Slobodian, V. V. Strelchuk, V. G. Raycheva, A. E. Belyaev, S. S. Bukalov, H. Hardtdegen, Viktor Sydoruk, N. Klein, S. А. Vitusevich	2009	31
11	Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)] Applied Physics Letters ·A. E. Belyaev, C. T. Foxon, С. В. Новиков, O. Makarovsky, L. Eaves, Menno J. Kappers, C. J. Humphreys	2003	31
12	Noise and transport characterization of single molecular break junctions with individual molecule Journal of Applied Physics ·Viktor Sydoruk, Dong Xiang, S. А. Vitusevich, M. V. Petrychuk, Anton Vladyka, Yi Zhang, Andreas Offenhäusser, V. A. Kochelap, A. E. Belyaev, Dirk Mayer	2012	30
13	Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride Semiconductors ·A. E. Belyaev, Н. С. Болтовец, V. N. Ivanov, V.P. Kladko, Р. В. Конакова, Ya. Ya. Kudrik, (unknown), В. В. Миленин, Yu. N. Sveshnikov, В. Н. Шеремет	2008	29
14	Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation Applied Surface Science ·S. А. Vitusevich, A. M. Kurakin, Р. В. Конакова, A. E. Belyaev, N. Klein	2008	29
15	Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors Applied Physics Letters ·S. А. Vitusevich, Serhiy Danylyuk, N. Klein, M. V. Petrychuk, V. N. Sokolov, V. A. Kochelap, A. E. Belyaev, V. Tilak, J. Smart, A. Vertiatchikh, L.F. Eastman	2002	27
16	Sensitivity of resorcinarene films towards aliphatic alcohols Sensors and Actuators B Chemical ·I.A. Koshets, Z.I. Kazantseva, A. E. Belyaev, Vitaly I. Kаlchеnkо	2009	24
17	Hot-electron transport in AlGaN∕GaN two-dimensional conducting channels Applied Physics Letters ·B. A. Danilchenko, S. E. Zelensky, E. Drok, S. А. Vitusevich, Serhiy Danylyuk, N. Klein, H. Lüth, A. E. Belyaev, V. A. Kochelap	2004	23
18	Investigation of spin-orbit interaction inAlGaN∕GaNheterostructures with large electron density Physical Review B ·A. E. Belyaev, V. G. Raicheva, A. M. Kurakin, N. Klein, S. А. Vitusevich	2008	22
19	AlGaN/GaN High Electron Mobility Transistor Structures: Self-Heating Effect and Performance Degradation IEEE Transactions on Device and Materials Reliability ·S. А. Vitusevich, A. M. Kurakin, N. Klein, M. V. Petrychuk, А. В. Наумов, A. E. Belyaev	2008	22
20	Mechanism of contact resistance formation in ohmic contacts with high dislocation density Journal of Applied Physics ·А. В. Саченко, A. E. Belyaev, Н. С. Болтовец, Р. В. Конакова, Ya. Ya. Kudryk, С. В. Новицкий, В. Н. Шеремет, J. Li, S. А. Vitusevich	2012	21

About A. E. Belyaev

A. E. Belyaev is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 182 papers that have together received 1.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (83 papers), Semiconductor Quantum Structures and Devices (73 papers), Semiconductor materials and interfaces (42 papers), Semiconductor materials and devices (28 papers), ZnO doping and properties (26 papers), Ga2O3 and related materials (23 papers), Quantum and electron transport phenomena (21 papers) and Metal and Thin Film Mechanics (18 papers). The work is most often cited by research in Condensed Matter Physics (763 citations), Atomic and Molecular Physics, and Optics (635 citations), Electronic, Optical and Magnetic Materials (312 citations), Electrical and Electronic Engineering (757 citations) and Materials Chemistry (378 citations). A. E. Belyaev has collaborated with scholars based in Ukraine, Germany and United States. Frequent co-authors include S. А. Vitusevich, N. Klein, Serhiy Danylyuk, V.P. Kladko, Р. В. Конакова, M. V. Petrychuk, S. Ostapenko, V. A. Kochelap, Daniel Baldwin Hess and H. Hardtdegen. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Physical review. B, Condensed matter, Nanotechnology and Nanoscale Research Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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A. E. Belyaev

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