V. N. Sokolov

480 total citations
52 papers, 337 citations indexed

About

V. N. Sokolov is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, V. N. Sokolov has authored 52 papers receiving a total of 337 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Atomic and Molecular Physics, and Optics, 28 papers in Electrical and Electronic Engineering and 14 papers in Condensed Matter Physics. Recurrent topics in V. N. Sokolov's work include Semiconductor Quantum Structures and Devices (24 papers), Quantum and electron transport phenomena (17 papers) and GaN-based semiconductor devices and materials (14 papers). V. N. Sokolov is often cited by papers focused on Semiconductor Quantum Structures and Devices (24 papers), Quantum and electron transport phenomena (17 papers) and GaN-based semiconductor devices and materials (14 papers). V. N. Sokolov collaborates with scholars based in United States, Ukraine and Germany. V. N. Sokolov's co-authors include V. A. Kochelap, K. W. Kim, Dwight Woolard, G. J. Iafrate, М. P. Kulish, R.J. Trew, J. B. Krieger, E. F. Venger, V. Tilak and Edwin Barry and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

V. N. Sokolov

47 papers receiving 317 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. N. Sokolov United States 10 211 202 143 57 42 52 337
Neil J. Pilgrim United Kingdom 11 240 1.1× 297 1.5× 164 1.1× 32 0.6× 72 1.7× 22 426
A. V. Velichko United Kingdom 12 133 0.6× 197 1.0× 213 1.5× 195 3.4× 69 1.6× 52 375
S. Morohashi Japan 10 199 0.9× 236 1.2× 327 2.3× 51 0.9× 47 1.1× 40 450
N. Dyakonova France 11 358 1.7× 546 2.7× 104 0.7× 126 2.2× 89 2.1× 47 648
David Wisbey United States 9 268 1.3× 160 0.8× 174 1.2× 35 0.6× 48 1.1× 20 433
Seiichiro Ariyoshi Japan 9 76 0.4× 208 1.0× 101 0.7× 31 0.5× 14 0.3× 56 325
C.-C. Chi United States 5 182 0.9× 250 1.2× 64 0.4× 44 0.8× 65 1.5× 10 327
M. Sotoodeh United Kingdom 7 227 1.1× 402 2.0× 37 0.3× 73 1.3× 38 0.9× 18 471
Paul B. Welander United States 8 269 1.3× 123 0.6× 134 0.9× 68 1.2× 49 1.2× 18 428
Y. Jompol United Kingdom 4 247 1.2× 116 0.6× 93 0.7× 63 1.1× 210 5.0× 9 449

Countries citing papers authored by V. N. Sokolov

Since Specialization
Citations

This map shows the geographic impact of V. N. Sokolov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. N. Sokolov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. N. Sokolov more than expected).

Fields of papers citing papers by V. N. Sokolov

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. N. Sokolov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. N. Sokolov. The network helps show where V. N. Sokolov may publish in the future.

Co-authorship network of co-authors of V. N. Sokolov

This figure shows the co-authorship network connecting the top 25 collaborators of V. N. Sokolov. A scholar is included among the top collaborators of V. N. Sokolov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. N. Sokolov. V. N. Sokolov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Iafrate, G. J. & V. N. Sokolov. (2020). The Bloch Electron Response to Electric Fields: Application to Graphene. physica status solidi (b). 257(6). 2 indexed citations
2.
Kochelap, V. A. & V. N. Sokolov. (2020). Transverse electric effects in charge-coupled van der Waals ribbons made of anisotropic 2D crystals. Journal of Applied Physics. 127(22). 1 indexed citations
4.
Kong, Byoung Don, V. N. Sokolov, K. W. Kim, & R.J. Trew. (2010). Quasi-Coherent Thermal Emission in the Terahertz by Doped Semiconductors. IEEE Sensors Journal. 10(3). 443–450. 3 indexed citations
5.
Sokolov, V. N., G. J. Iafrate, & J. B. Krieger. (2009). Bloch electron spontaneous emission from a single energy band in a classical ac field. Physical Review B. 80(16). 1 indexed citations
6.
Kong, Byoung Don, V. N. Sokolov, K. W. Kim, & R.J. Trew. (2008). Terahertz emission mediated by surface plasmon polaritons in doped semiconductors with surface grating. Journal of Applied Physics. 103(5). 9 indexed citations
7.
Barry, Edwin, V. N. Sokolov, K. W. Kim, & R.J. Trew. (2008). Terahertz generation in GaN diodes in the limited space-charge accumulation mode. Journal of Applied Physics. 103(12). 9 indexed citations
8.
Sokolov, V. N., et al.. (2007). Negative small-signal impedance of nanoscale GaN diodes in the terahertz frequency regime. Applied Physics Letters. 90(14). 5 indexed citations
9.
Sokolov, V. N., G. J. Iafrate, & J. B. Krieger. (2007). Microcavity enhancement of spontaneous emission for Bloch oscillations. Physical Review B. 75(4). 4 indexed citations
10.
Fedorov, I. A., V. N. Sokolov, K. W. Kim, & J. M. Zavada. (2005). Coulombic effects of electron-hole plasma in nitride-based nanostructures. Journal of Applied Physics. 98(6). 3 indexed citations
11.
Kim, K. W., V. N. Sokolov, V. A. Kochelap, V. V. Korotyeyev, & Dwight Woolard. (2005). Nitride-based two-terminal oscillators operating in the THz regime. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5790. 195–195. 2 indexed citations
12.
Sokolov, V. N., K. W. Kim, V. A. Kochelap, & Dwight Woolard. (2004). Phase-plane analysis and classification of transient regimes for high-field electron transport in nitride semiconductors. Journal of Applied Physics. 96(11). 6492–6503. 6 indexed citations
13.
Kim, K. W., V. A. Kochelap, V. N. Sokolov, & S. M. Komirenko. (2004). QUASI-BALLISTIC AND OVERSHOOT TRANSPORT IN GROUP III-NITRIDES. International Journal of High Speed Electronics and Systems. 14(1). 127–154. 3 indexed citations
15.
Vitusevich, S. А., Serhiy Danylyuk, N. Klein, et al.. (2002). Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors. Applied Physics Letters. 80(12). 2126–2128. 27 indexed citations
16.
Sokolov, V. N.. (2002). Effect of nonuniform doping profile on thermometric performance of diode temperature sensors. Semiconductor Physics Quantum Electronics & Optoelectronics. 5(2). 201–211. 1 indexed citations
17.
Kulish, М. P., et al.. (2000). Limiting characteristics of diode temperature sensors. Sensors and Actuators A Physical. 86(3). 197–205. 30 indexed citations
18.
Kochelap, V. A., V. N. Sokolov, & N. A. Zakhleniuk. (1994). Suppression of hot-electron fluctuations in submicrometre semiconductor layers. Semiconductor Science and Technology. 9(5S). 588–591. 1 indexed citations
19.
Kochelap, V. A., Andrey Kuznetsov, & V. N. Sokolov. (1988). Resonatorless Dissipative Optical Bistability of Electronic Origin in Direct‐Gap Semiconductors. physica status solidi (b). 150(2). 489–493. 4 indexed citations
20.
Kochelap, V. A. & V. N. Sokolov. (1983). Deformational Phase Transitions and Periodic Structures in a Magnetic Field. physica status solidi (b). 120(2). 565–575. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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