V. Merai

459 citations

16 papers · 396 indexed · h-index 8

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 15
- GaN-based semiconductor devices and materials 15
Atomic and Molecular Physics, and Optics 8
- Semiconductor Quantum Structures and Devices 8

Co-authors: J. Ramer E. Armour Dongzhu Lu D. I. Florescu A. Gurary L. Kadinski Leonid Chernyak Ian T. Ferguson
Journals: Journal of Crystal Growth (5 papers)MRS Internet Journal of Nitride Semiconductor Research (1 paper)Applied Physics Letters (1 paper)Journal of Applied Physics (1 paper)IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control (1 paper)
Partner nations: United States

In The Last Decade

V. Merai

15 papers receiving 382 citations

Peers

Countries citing papers authored by V. Merai

Since Specialization

Citations

This map shows the geographic impact of V. Merai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Merai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Merai more than expected).

Fields of papers citing papers by V. Merai

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Merai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Merai. The network helps show where V. Merai may publish in the future.

Co-authorship network

The 25 scholars most cited alongside V. Merai, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. Merai Line = papers co-authored together V. Merai links everyone, so they are left out of the graph.

All Works

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16 of 16 papers shown

#	Work
1	Modeling analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors Università del Salento ·L. Kadinski, V. Merai, Joseph Mah, J. Ramer, E. Armour, R. A. Stall, A. Gurary, Sirikan Yamada, Yu.N. Makarov	2015	0
2	Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors Journal of Crystal Growth ·E Daniels, Joseph Mah, J. Ramer, V. Merai, E. Armour, L. Kadinski, A. Gurary	2006	44
3	InGaN quantum well epilayers morphological evolution under a wide range of MOCVD growth parameter sets Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·D. I. Florescu, Santanu Roy, V. Merai, Joseph Mah, Xiao‐Liang Gao, E. Armour, W. E. Quinn	2006	3
4	Analysis of SAW properties in ZnO/Al/sub x/Ga/sub 1-x/N/c-Al/sub 2/O/sub 3/ structures IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control ·Ying Chen, Nuri W. Emanetoglu, Gaurav Saraf, Pan Wu, Yicheng Lu, Joseph Mah, V. Merai, Sureshkumar G. Mehta, Dongzhu Lu, Filippo Pilotta, E. Armour, M. Pophristić	2005	6
5	Origin of ring defects in high In content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study MRS Internet Journal of Nitride Semiconductor Research ·F. Shahedipour‐Sandvik, Muhammad Jamil, Lehan Syah, James Grandusky, Kathleen Dunn, J. Ramer, V. Merai	2005	3
6	Advanced characterization techniques of nonuniform indium distribution within InGaN/GaN heterostructures grown by MOCVD physica status solidi (a) ·Dongzhu Lu, D. I. Florescu, Xiao‐Liang Gao, J. Ramer, Joseph Mah, V. Merai, Ion Tillier, Martim Vicente da Cunha Silva, Ľubomír Duraj, E. Armour	2005	3
7	InGaN/GaN LEDs optical output efficiency enhancement based on AFM surface morphology studies of the constituent layers Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·D. I. Florescu, J. Ramer, V. Merai, Joseph Mah, Dongzhu Lu, 武书连, E. Armour	2005	1
8	Sapphire substrate misorientation effects on GaN nucleation layer properties Journal of Crystal Growth ·Dongzhu Lu, D. I. Florescu, 武书连, V. Merai, J. Ramer, Joseph Mah, E. Armour	2004	31
9	AFM and temperature-dependent photoluminescence studies of the degree of localization induced by quantum-dot like states in InGaN single quantum well light emitting diodes grown by MOCVD on (0001) sapphire Journal of Crystal Growth ·D. I. Florescu, J. Ramer, V. Merai, Joseph Mah, Dongzhu Lu, 武书连, E. Armour	2004	8
10	High power blue LED development using different growth modes physica status solidi (a) ·Dong‐Seon Lee, 菅野博貢, 卢军政, Meivina Cintalia, V. Merai, Joseph Mah, Ľubomír Duraj, E. Armour	2004	3
11	Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition Journal of Applied Physics ·Santanu Roy, J. Ramer, D. I. Florescu, V. Merai, Ogunwale A.B, Joseph Mah, Öznur Hızarcı, Dongzhu Lu, J Chotkowski, Hector Pino, E. Armour	2003	91
12	Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors Journal of Crystal Growth ·L. Kadinski, V. Merai, Joseph Mah, J. Ramer, E. Armour, R. A. Stall, A. Gurary, Sirikan Yamada, Yu.N. Makarov	2003	42
13	Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire Applied Physics Letters ·D. I. Florescu, Santanu Roy, J. Ramer, Stephan Barcikowski, V. Merai, Grégoire Behem, Dongzhu Lu, E. Armour, Leonid Chernyak	2003	81
14	Advanced characterization studies of sapphire substrate misorientation effects on GaN-based LED device development physica status solidi (a) ·Dongzhu Lu, D. I. Florescu, Jorge Guillermo Sozoranga Cajamarca, V. Merai, Joseph Mah, J. Ramer, Shiping Guo, E. Armour	2003	22
15	Edge‐Emitting Photoluminescence/Electroluminescence Polarization Studies of InGaN/GaN Structures Grown by MOCVD on (0001) Sapphire Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·D. I. Florescu, G H Prasetyo, Dongzhu Lu, Friedl Weiss, Joseph Mah, J. Ramer, S. M. Ting, V. Merai, Ogunwale A.B, R. A. Stall	2002	2
16	Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs Journal of Crystal Growth ·C. A. Tran, R. F. Karlicek, M. Schurman, A. Osinsky, V. Merai, Chia-Han Wang, I. Eliashevich, 達志寺口, Jan-Hendrik Wulf, Ian T. Ferguson, R. A. Stall	1998	56

About V. Merai

V. Merai is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Mechanics of Materials, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 16 papers that have together received 396 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (15 papers), Semiconductor Quantum Structures and Devices (8 papers), Metal and Thin Film Mechanics (6 papers), Semiconductor materials and devices (4 papers), ZnO doping and properties (4 papers), Ga2O3 and related materials (4 papers), Acoustic Wave Resonator Technologies (2 papers) and Catalytic Processes in Materials Science (1 paper). The work is most often cited by research in Condensed Matter Physics (326 citations), Electronic, Optical and Magnetic Materials (122 citations), Atomic and Molecular Physics, and Optics (140 citations), Materials Chemistry (170 citations) and Mechanics of Materials (86 citations). V. Merai has collaborated with scholars based in United States. Frequent co-authors include J. Ramer, E. Armour, Dongzhu Lu, D. I. Florescu, A. Gurary, L. Kadinski, Leonid Chernyak, Ian T. Ferguson, A. Osinsky and C. A. Tran. Their work appears in journals such as Journal of Crystal Growth, MRS Internet Journal of Nitride Semiconductor Research, Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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