E.V. Yakovlev

820 total citations
38 papers, 678 citations indexed

About

E.V. Yakovlev is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, E.V. Yakovlev has authored 38 papers receiving a total of 678 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Condensed Matter Physics, 27 papers in Electrical and Electronic Engineering and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in E.V. Yakovlev's work include GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (17 papers) and Semiconductor Quantum Structures and Devices (15 papers). E.V. Yakovlev is often cited by papers focused on GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (17 papers) and Semiconductor Quantum Structures and Devices (15 papers). E.V. Yakovlev collaborates with scholars based in Germany, Russia and France. E.V. Yakovlev's co-authors include Р.А. Талалаев, S. Yu. Karpov, Yu.N. Makarov, A.S. Segal, M. V. Durnev, I. Yu. Evstratov, M. Heuken, A. F. Tsatsul’nikov, E. E. Zavarin and W. V. Lundin and has published in prestigious journals such as Applied Physics Letters, Japanese Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

E.V. Yakovlev

38 papers receiving 627 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E.V. Yakovlev Germany 15 591 275 253 235 212 38 678
Р.А. Талалаев Germany 16 768 1.3× 402 1.5× 330 1.3× 311 1.3× 264 1.2× 51 893
E. Armour United States 16 464 0.8× 517 1.9× 266 1.1× 162 0.7× 436 2.1× 67 868
J. Wollweber Germany 14 413 0.7× 346 1.3× 244 1.0× 240 1.0× 97 0.5× 50 677
Masatomo Shibata Japan 11 518 0.9× 300 1.1× 277 1.1× 258 1.1× 130 0.6× 11 597
Seiji Nakahata Japan 6 605 1.0× 233 0.8× 282 1.1× 295 1.3× 155 0.7× 9 653
J. Carlos Rojo United States 13 362 0.6× 196 0.7× 248 1.0× 181 0.8× 114 0.5× 31 559
W. T. Young United Kingdom 10 518 0.9× 254 0.9× 277 1.1× 186 0.8× 140 0.7× 13 617
W. Swider United States 14 382 0.6× 388 1.4× 295 1.2× 178 0.8× 270 1.3× 35 662
M. Kuball United Kingdom 19 695 1.2× 430 1.6× 496 2.0× 244 1.0× 179 0.8× 45 922
Benny Van Daele Belgium 13 342 0.6× 338 1.2× 181 0.7× 168 0.7× 193 0.9× 35 572

Countries citing papers authored by E.V. Yakovlev

Since Specialization
Citations

This map shows the geographic impact of E.V. Yakovlev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E.V. Yakovlev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E.V. Yakovlev more than expected).

Fields of papers citing papers by E.V. Yakovlev

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E.V. Yakovlev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E.V. Yakovlev. The network helps show where E.V. Yakovlev may publish in the future.

Co-authorship network of co-authors of E.V. Yakovlev

This figure shows the co-authorship network connecting the top 25 collaborators of E.V. Yakovlev. A scholar is included among the top collaborators of E.V. Yakovlev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E.V. Yakovlev. E.V. Yakovlev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yakovlev, E.V., et al.. (2019). Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure. Japanese Journal of Applied Physics. 58(SC). SCCD26–SCCD26. 6 indexed citations
2.
Segal, A.S., E.V. Yakovlev, Р.А. Талалаев, et al.. (2018). Optimization of deposition uniformity during silicon epitaxy in deep trenches. Semiconductor Science and Technology. 34(2). 24001–24001. 2 indexed citations
3.
Yakovlev, E.V., et al.. (2016). Stress‐dislocation management in MOVPE of GaN on SiC wafers. physica status solidi (a). 213(10). 2759–2763. 6 indexed citations
4.
Yakovlev, E.V., et al.. (2016). Kinetics of AlGaN metal–organic vapor phase epitaxy for deep-UV applications. Japanese Journal of Applied Physics. 55(5S). 05FD07–05FD07. 5 indexed citations
5.
Rauf, H., et al.. (2013). On mechanisms governing AlN and AlGaN growth rate and composition in large substrate size planetary MOVPE reactors. Journal of Crystal Growth. 393. 103–107. 15 indexed citations
6.
Kolesnikova, A. L., et al.. (2013). Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops. Applied Physics Letters. 103(15). 43 indexed citations
7.
Yakovlev, E.V., A.S. Segal, K. A. Bulashevich, S. Yu. Karpov, & Р.А. Талалаев. (2013). Correlations between Epitaxy Recipe, Characteristics, and Performance of Nitride Light Emitting Diode Structures. Japanese Journal of Applied Physics. 52(8S). 08JB15–08JB15. 5 indexed citations
8.
Segal, A.S., et al.. (2011). AlInN MOVPE: growth chemistry and analysis of trends. Journal of Crystal Growth. 352(1). 199–202. 11 indexed citations
9.
Lundin, W. V., A. E. Nikolaev, A. V. Sakharov, et al.. (2010). Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice. Journal of Crystal Growth. 315(1). 267–271. 28 indexed citations
10.
Durnev, M. V., et al.. (2010). Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity. Applied Physics Letters. 97(5). 31 indexed citations
11.
Segal, A.S., et al.. (2009). Modeling analysis of AlN and AlGaN HVPE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 5 indexed citations
12.
Sakharov, A. V., W. V. Lundin, E. E. Zavarin, et al.. (2009). Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs. Semiconductors. 43(6). 812–817. 13 indexed citations
13.
Талалаев, Р.А., A.S. Segal, E.V. Yakovlev, et al.. (2008). Effect of metallic surface coverage on material quality in III‐nitride MOVPE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1691–1694. 5 indexed citations
14.
Yakovlev, E.V., Р.А. Талалаев, N. Kaluza, H. Hardtdegen, & H.L. Bay. (2006). Influence of the reactor inlet configuration on the AlGaN growth efficiency. Journal of Crystal Growth. 298. 413–417. 7 indexed citations
15.
Yakovlev, E.V., Р.А. Талалаев, Robert Martin, et al.. (2006). Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF‐S horizontal reactor. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1620–1623. 12 indexed citations
16.
Lundin, W. V., E. E. Zavarin, D. S. Sizov, et al.. (2005). Effects of reactor pressure and residence time on GaN MOVPE growth efficiency. Journal of Crystal Growth. 287(2). 605–609. 11 indexed citations
17.
Hardtdegen, H., N. Kaluza, R. Schmidt, et al.. (2004). MOVPE growth and in situ characterization of GaN layers on sapphire substrates. physica status solidi (a). 201(2). 312–319. 17 indexed citations
18.
Yakovlev, E.V., Р.А. Талалаев, Yu.N. Makarov, et al.. (2004). Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors. Journal of Crystal Growth. 266(1-3). 354–362. 11 indexed citations
19.
Karpov, S. Yu., Р.А. Талалаев, E.V. Yakovlev, & Yuri Makarov. (2000). Surface Segregation and Composition Fluctuations in ammonia MBE and MOVPE of InGaN. MRS Proceedings. 639. 7 indexed citations
20.
Талалаев, Р.А., et al.. (1999). On the Possible Origins of Low Indium Incorporation during MOVPE of InGaN. physica status solidi (a). 176(1). 253–256. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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