A. M. Roskowski

728 total citations
29 papers, 414 citations indexed

About

A. M. Roskowski is a scholar working on Condensed Matter Physics, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, A. M. Roskowski has authored 29 papers receiving a total of 414 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Condensed Matter Physics, 13 papers in Materials Chemistry and 11 papers in Mechanics of Materials. Recurrent topics in A. M. Roskowski's work include GaN-based semiconductor devices and materials (26 papers), ZnO doping and properties (13 papers) and Metal and Thin Film Mechanics (11 papers). A. M. Roskowski is often cited by papers focused on GaN-based semiconductor devices and materials (26 papers), ZnO doping and properties (13 papers) and Metal and Thin Film Mechanics (11 papers). A. M. Roskowski collaborates with scholars based in United States, Germany and Sweden. A. M. Roskowski's co-authors include R. F. Davis, S. Einfeldt, Edward A. Preble, P.Q. Miraglia, R. J. Nemanich, Robert D. Grober, W. Platow, Ulrich T. Schwarz, P. James Schuck and T. P. Smith and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. M. Roskowski

29 papers receiving 396 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. M. Roskowski United States 13 333 192 169 144 123 29 414
S. Zamir Israel 9 254 0.8× 147 0.8× 142 0.8× 134 0.9× 84 0.7× 22 341
O. Svensk Finland 13 304 0.9× 174 0.9× 163 1.0× 112 0.8× 78 0.6× 39 383
Ravi Shivaraman United States 9 352 1.1× 160 0.8× 164 1.0× 119 0.8× 117 1.0× 12 450
Pradeep Rajagopal United States 9 339 1.0× 168 0.9× 170 1.0× 128 0.9× 122 1.0× 16 387
Sebastian Metzner Germany 13 414 1.2× 208 1.1× 123 0.7× 205 1.4× 103 0.8× 52 489
Tae Mochizuki Japan 7 506 1.5× 260 1.4× 200 1.2× 308 2.1× 99 0.8× 14 548
Akihiko Ishibashi Japan 12 262 0.8× 172 0.9× 112 0.7× 132 0.9× 57 0.5× 28 339
Masatomo Shibata Japan 11 518 1.6× 277 1.4× 300 1.8× 258 1.8× 84 0.7× 11 597
Yoshiyuki Imada Japan 6 369 1.1× 228 1.2× 142 0.8× 138 1.0× 76 0.6× 7 445
Sascha Kreiskott United States 10 257 0.8× 177 0.9× 112 0.7× 108 0.8× 46 0.4× 12 359

Countries citing papers authored by A. M. Roskowski

Since Specialization
Citations

This map shows the geographic impact of A. M. Roskowski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. M. Roskowski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. M. Roskowski more than expected).

Fields of papers citing papers by A. M. Roskowski

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. M. Roskowski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. M. Roskowski. The network helps show where A. M. Roskowski may publish in the future.

Co-authorship network of co-authors of A. M. Roskowski

This figure shows the co-authorship network connecting the top 25 collaborators of A. M. Roskowski. A scholar is included among the top collaborators of A. M. Roskowski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. M. Roskowski. A. M. Roskowski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Einfeldt, S., et al.. (2005). X線微小回折による無マスク・ペンデオエピタクシーによって成長したGaN(0001)層中の局部歪,欠陥および結晶学的傾斜. Journal of Applied Physics. 97(1). 1–13504. 12 indexed citations
2.
Barabash, Rozaliya, Gene E. Ice, S. Einfeldt, et al.. (2005). White X‐ray microbeam analysis of strain and crystallographic tilt in GaN layers grown by maskless pendeoepitaxy. physica status solidi (a). 202(5). 732–738. 5 indexed citations
3.
Barabash, Rozaliya, et al.. (2004). Local strain, defects, and crystallographic tilt in GaN(0001) layers grown by maskless pendeo-epitaxy from x-ray microdiffraction. Journal of Applied Physics. 97(1). 4 indexed citations
4.
Smith, T. P., et al.. (2004). Growth and characterization of ZnO thin films on GaN epilayers. Journal of Electronic Materials. 33(7). 826–832. 7 indexed citations
5.
Collazo, Ramón, R. Schlesser, A. M. Roskowski, et al.. (2003). Electron energy distribution during high-field transport in AlN. Journal of Applied Physics. 93(5). 2765–2771. 4 indexed citations
6.
Schwarz, Ulrich T., P. James Schuck, Michael D. Mason, et al.. (2003). Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC. Physical review. B, Condensed matter. 67(4). 19 indexed citations
7.
Smith, T. P., et al.. (2003). Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy. Journal of Crystal Growth. 257(3-4). 255–262. 20 indexed citations
8.
Roskowski, A. M., et al.. (2003). Characterization of hydrogen etched 6H–SiC(0001) substrates and subsequently grown AlN films. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 21(2). 394–400. 11 indexed citations
9.
Davis, R. F., et al.. (2003). Gallium nitride and related materials: challenges in materials processing. Acta Materialia. 51(19). 5961–5979. 51 indexed citations
10.
Roskowski, A. M., et al.. (2002). Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy. Opto-Electronics Review. 262–270. 2 indexed citations
11.
Roskowski, A. M., et al.. (2002). Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces. Journal of Applied Physics. 91(2). 732–738. 34 indexed citations
12.
Collazo, Ramón, R. Schlesser, A. M. Roskowski, R. F. Davis, & Zlatko Sitar. (2002). Observations of electron velocity overshoot during high-field transport in AlN. MRS Proceedings. 743. 2 indexed citations
13.
Davis, R. F., A. M. Roskowski, Edward A. Preble, et al.. (2002). Gallium nitride materials - progress, status, and potential roadblocks. Proceedings of the IEEE. 90(6). 993–1005. 31 indexed citations
14.
Roskowski, A. M., et al.. (2002). Maskless pendeo-epitaxial growth of GaN films. Journal of Electronic Materials. 31(5). 421–428. 10 indexed citations
15.
Schuck, P. James, Robert D. Grober, A. M. Roskowski, S. Einfeldt, & R. F. Davis. (2002). Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence. Applied Physics Letters. 81(11). 1984–1986. 9 indexed citations
16.
Roskowski, A. M., Richard M. Felder, & Lisa Bullard. (2001). Student Use (and Non-Use) of Instructional Software. Journal of STEM education. 2(3). 41–45. 3 indexed citations
17.
Roskowski, A. M., P.Q. Miraglia, Edward A. Preble, et al.. (2001). Strain and Dislocation Reduction in Maskless Pendeo-Epitaxy GaN Thin Films. physica status solidi (a). 188(2). 729–732. 1 indexed citations
18.
Roskowski, A. M., P.Q. Miraglia, Edward A. Preble, et al.. (2001). Strain and Dislocation Reduction in Maskless Pendeo-Epitaxy GaN Thin Films. physica status solidi (a). 188(2). 729–732. 9 indexed citations
19.
Jia, Lijun, Edward T. Yu, P.M. Asbeck, et al.. (2001). Polarization charges and polarization-induced barriers in AlxGa1−xN/GaN and InyGa1−yN/GaN heterostructures. Applied Physics Letters. 79(18). 2916–2918. 12 indexed citations
20.
Collazo, Ramón, R. Schlesser, A. M. Roskowski, R. F. Davis, & Zlatko Sitar. (2000). Hot electron transport in AlN. Journal of Applied Physics. 88(10). 5865–5869. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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