E. Armour

1.1k total citations
67 papers, 868 citations indexed

About

E. Armour is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, E. Armour has authored 67 papers receiving a total of 868 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Atomic and Molecular Physics, and Optics, 39 papers in Electrical and Electronic Engineering and 35 papers in Condensed Matter Physics. Recurrent topics in E. Armour's work include Semiconductor Quantum Structures and Devices (39 papers), GaN-based semiconductor devices and materials (35 papers) and ZnO doping and properties (12 papers). E. Armour is often cited by papers focused on Semiconductor Quantum Structures and Devices (39 papers), GaN-based semiconductor devices and materials (35 papers) and ZnO doping and properties (12 papers). E. Armour collaborates with scholars based in United States, Taiwan and Germany. E. Armour's co-authors include J. Ramer, V. Merai, D. I. Florescu, Dongzhu Lu, C.F. Schaus, A. Gurary, Siyi Sun, C.P. Hains, H.Q. Hou and G.A. Vawter and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

E. Armour

64 papers receiving 832 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. Armour United States 16 517 464 436 266 162 67 868
A. Lell Germany 21 653 1.3× 839 1.8× 761 1.7× 177 0.7× 127 0.8× 77 1.1k
Р.А. Талалаев Germany 16 402 0.8× 768 1.7× 264 0.6× 330 1.2× 311 1.9× 51 893
E.V. Yakovlev Germany 15 275 0.5× 591 1.3× 212 0.5× 253 1.0× 235 1.5× 38 678
N. Pan United States 19 886 1.7× 270 0.6× 587 1.3× 213 0.8× 92 0.6× 82 1.1k
R. N. Bicknell-Tassius Germany 18 679 1.3× 235 0.5× 611 1.4× 398 1.5× 124 0.8× 67 990
Hajime Fujikura Japan 18 486 0.9× 423 0.9× 351 0.8× 301 1.1× 242 1.5× 65 803
D. Uffmann Germany 8 252 0.5× 628 1.4× 164 0.4× 430 1.6× 294 1.8× 14 822
R. D. Briggs United States 14 544 1.1× 351 0.8× 210 0.5× 178 0.7× 182 1.1× 31 714
R. Piotrzkowski Poland 18 487 0.9× 612 1.3× 461 1.1× 320 1.2× 310 1.9× 61 941
K. Sebald Germany 16 387 0.7× 335 0.7× 511 1.2× 333 1.3× 141 0.9× 65 805

Countries citing papers authored by E. Armour

Since Specialization
Citations

This map shows the geographic impact of E. Armour's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Armour with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Armour more than expected).

Fields of papers citing papers by E. Armour

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Armour. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Armour. The network helps show where E. Armour may publish in the future.

Co-authorship network of co-authors of E. Armour

This figure shows the co-authorship network connecting the top 25 collaborators of E. Armour. A scholar is included among the top collaborators of E. Armour based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Armour. E. Armour is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Armour, E., et al.. (2023). InP-Based Tunnel Junctions for Microconcentrator Photovoltaics. IEEE Journal of Photovoltaics. 13(6). 819–824. 1 indexed citations
2.
Armour, E., et al.. (2017). Notice of Removal Effect of growth temperature on GaAs solar cells at high MOCVD growth rates. 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC). 45. 1–7. 1 indexed citations
3.
Su, Jie, et al.. (2015). Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor. Journal of materials research/Pratt's guide to venture capital sources. 30(19). 2846–2858. 19 indexed citations
4.
Armour, E., et al.. (2013). Effect of Growth Pressure and Gas-Phase Chemistry on the Optical Quality of InGaN/GaN Multi-Quantum Wells. MRS Proceedings. 1538. 341–351. 3 indexed citations
5.
Zhong, Jian, Gaurav Saraf, Yi‐Hsuan Lu, et al.. (2007). Structural and Optical Properties of ZnO Nanotips Grown on GaN Using Metalorganic Chemical Vapor Deposition. Journal of Electronic Materials. 36(6). 654–658. 5 indexed citations
6.
Ramer, J., et al.. (2006). Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors. Journal of Crystal Growth. 289(2). 708–714. 44 indexed citations
7.
Chen, Ying, Nuri W. Emanetoglu, Gaurav Saraf, et al.. (2005). Analysis of SAW properties in ZnO/Al/sub x/Ga/sub 1-x/N/c-Al/sub 2/O/sub 3/ structures. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control. 52(7). 1161–1169. 6 indexed citations
8.
Yu, Edward T., et al.. (2005). Observation of In concentration variations in InGaN∕GaN quantum-well heterostructures by scanning capacitance microscopy. Applied Physics Letters. 86(20). 5 indexed citations
9.
Lu, Dongzhu, et al.. (2004). Sapphire substrate misorientation effects on GaN nucleation layer properties. Journal of Crystal Growth. 272(1-4). 353–359. 31 indexed citations
10.
Lee, Dong‐Seon, et al.. (2004). High power blue LED development using different growth modes. physica status solidi (a). 201(12). 2644–2648. 3 indexed citations
11.
Armour, E., et al.. (2003). To Grow Profitably, Manage Customer Value, Not Customer Relationships. 16(2). 53. 1 indexed citations
12.
Florescu, D. I., et al.. (2003). Edge-emitting electroluminescence polarization investigation of InGaN/GaN light-emitting diodes grown by metal-organic chemical vapor deposition on sapphire (0001). Journal of Electronic Materials. 32(11). 1330–1334. 11 indexed citations
13.
Hoffman, R. W., et al.. (2003). In situ strain control during MOCVD growth of high-quality InP-based long wavelength distributed Bragg reflectors. Journal of Crystal Growth. 261(2-3). 301–308. 4 indexed citations
14.
Silver, J., P. Cooke, E. Armour, et al.. (2002). High-Volume Manufacturing of InGaP /GaAs HBT Wafers. 1 indexed citations
15.
Thompson, Alan, et al.. (1997). Large scale manufacturing of compound semiconductors by MOVPE. Journal of Crystal Growth. 170(1-4). 92–96. 3 indexed citations
16.
Thompson, Alan, et al.. (1996). In-situ controls for MOVPE manufacturing. III-Vs Review. 9(3). 12–17. 5 indexed citations
17.
Armour, E., et al.. (1994). A confocal photoluminescence study of metalorganic chemical vapor deposition growth on patterned GaAs substrates. Journal of Applied Physics. 75(6). 3049–3055. 5 indexed citations
18.
Srinivasan, S., et al.. (1992). Semiconductor laser with unstable resonator consisting of negative cylindrical lenses. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1634. 413–413. 1 indexed citations
19.
Zhou, Ping, C.F. Schaus, Siyi Sun, et al.. (1992). Inverting and latching optical logic gates based on the integration of vertical-cavity surface-emitting lasers and photothyristors. IEEE Photonics Technology Letters. 4(2). 157–159. 11 indexed citations
20.
Armour, E., et al.. (1992). Reduction of deep levels in MOCVD-regrown AlxGa1−x as interfaces by (NH4)2S passivation and in-situ HCl etching. Journal of Electronic Materials. 21(11). 1051–1056. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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