D. I. Florescu

1.2k citations

26 papers · 962 indexed · h-index 13

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Materials Chemistry top 10%
- Thermal properties of materials
- ZnO doping and properties
- Advanced Thermoelectric Materials and Devices

Papers in

Condensed Matter Physics 22
- GaN-based semiconductor devices and materials 22
Atomic and Molecular Physics, and Optics 15
- Semiconductor Quantum Structures and Devices 14

Co-authors: Fred H. Pollak Alexander A. Balandin Jin Zou D. Kotchetkov J. Ramer E. Armour V. M. Asnin V. Merai
Journals: Applied Physics Letters (6 papers)Journal of Applied Physics (5 papers)Journal of Crystal Growth (2 papers)Journal of Electronic Materials (2 papers)Journal of Non-Crystalline Solids (2 papers)
Partner nations: United States

In The Last Decade

D. I. Florescu

26 papers receiving 928 citations

Peers

Countries citing papers authored by D. I. Florescu

Since Specialization

Citations

This map shows the geographic impact of D. I. Florescu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. I. Florescu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. I. Florescu more than expected).

Fields of papers citing papers by D. I. Florescu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. I. Florescu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. I. Florescu. The network helps show where D. I. Florescu may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. I. Florescu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. I. Florescu Line = papers co-authored together D. I. Florescu links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Observation of In concentration variations in InGaN∕GaN quantum-well heterostructures by scanning capacitance microscopy Applied Physics Letters ·Leslie Peppers, Edward T. Yu, D. I. Florescu, J. Ramer, Dong‐Seon Lee, Santanu Roy, E. Armour	2005	5
2	Advanced characterization techniques of nonuniform indium distribution within InGaN/GaN heterostructures grown by MOCVD physica status solidi (a) ·Dongzhu Lu, D. I. Florescu, Xiao‐Liang Gao, J. Ramer, Joseph Mah, V. Merai, Ion Tillier, Martim Vicente da Cunha Silva, Ľubomír Duraj, E. Armour	2005	3
3	Sapphire substrate misorientation effects on GaN nucleation layer properties Journal of Crystal Growth ·Dongzhu Lu, D. I. Florescu, 武书连, V. Merai, J. Ramer, Joseph Mah, E. Armour	2004	31
4	AFM and temperature-dependent photoluminescence studies of the degree of localization induced by quantum-dot like states in InGaN single quantum well light emitting diodes grown by MOCVD on (0001) sapphire Journal of Crystal Growth ·D. I. Florescu, J. Ramer, V. Merai, Joseph Mah, Dongzhu Lu, 武书连, E. Armour	2004	8
5	In Ga N ∕ Ga N single-quantum-well light-emitting diodes optical output efficiency dependence on the properties of the barrier layer separating the active and p-layer regions Applied Physics Letters ·D. I. Florescu, J. Ramer, Kate Cerino Britton, E. Armour	2004	16
6	Edge-emitting electroluminescence polarization investigation of InGaN/GaN light-emitting diodes grown by metal-organic chemical vapor deposition on sapphire (0001) Journal of Electronic Materials ·D. I. Florescu, R.G. Kapooria, Santanu Roy, J. Ramer, E. Armour	2003	11
7	Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition Journal of Applied Physics ·Santanu Roy, J. Ramer, D. I. Florescu, V. Merai, Ogunwale A.B, Joseph Mah, Öznur Hızarcı, Dongzhu Lu, J Chotkowski, Hector Pino, E. Armour	2003	91
8	Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire Applied Physics Letters ·D. I. Florescu, Santanu Roy, J. Ramer, Stephan Barcikowski, V. Merai, Grégoire Behem, Dongzhu Lu, E. Armour, Leonid Chernyak	2003	81
9	InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers IEEE Journal of Selected Topics in Quantum Electronics ·Jinhyun Lee, P G Eliseev, Marek Osiński, وائل حنا حداد, D. I. Florescu, Shiping Guo, M. Pophristić	2003	15
10	Ion-beam processing effects on the thermal conductivity of n-GaN/sapphire (0001) Journal of Applied Physics ·D. I. Florescu, Fred H. Pollak, 玉江山邨, Farid Khan, I. Adesida, R. J. Molnar	2002	4
11	High spatial resolution thermal conductivity of bulk ZnO (0001) Journal of Applied Physics ·D. I. Florescu, Lev Mourokh, Fred H. Pollak, D. C. Look, G. Cantwell, Marco Trauzzi	2002	51
12	Thermal conductivity of GaN films: Effects of impurities and dislocations Journal of Applied Physics ·Jin Zou, D. Kotchetkov, Alexander A. Balandin, D. I. Florescu, Fred H. Pollak	2002	283
13	The Effect of Defects and Dopants on Thermal Conduction in GaN Films MRS Proceedings ·Jin Zou, D. Kotchetkov, Alexander A. Balandin, D. I. Florescu, Fred H. Pollak	2002	2
14	Effect of dislocations on thermal conductivity of GaN layers Applied Physics Letters ·D. Kotchetkov, Jin Zou, Alexander A. Balandin, D. I. Florescu, Fred H. Pollak	2001	115
15	High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence Journal of Applied Physics ·D. I. Florescu, V. M. Asnin, Fred H. Pollak, R. J. Molnar, C. E. C. Wood	2000	82
16	Doping Dependence Of The Thermal Conductivity Of Hydride Vapor Phase Epitaxy Grownn-GaN/Sapphire (0001) Using A Scanning Thermal Microscope MRS Internet Journal of Nitride Semiconductor Research ·D. I. Florescu, Yuan-ning Liang, Lev Mourokh, Fred H. Pollak, R. J. Molnar	2000	1
17	Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy Applied Physics Letters ·D. I. Florescu, V. M. Asnin, Fred H. Pollak, Andrew M. Jones, J. Ramer, M. Schurman, Ian T. Ferguson	2000	95
18	Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope MRS Proceedings ·D. I. Florescu, Yuan-ning Liang, Lev Mourokh, Fred H. Pollak, R. J. Molnar	1999	4
19	Optical anisotropy in pulsed laser deposited a-GeSe2 thin films Journal of Non-Crystalline Solids ·D. I. Florescu, R. L. Cappelletti	1999	3
20	Photobleaching in a g-Ge0.27Sn0.03Se0.7 thin film Journal of Non-Crystalline Solids ·D. I. Florescu, R. L. Cappelletti	1999	3

About D. I. Florescu

D. I. Florescu is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Materials Chemistry, having authored 26 papers that have together received 962 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (22 papers), Semiconductor Quantum Structures and Devices (14 papers), Thermal properties of materials (7 papers), Ga2O3 and related materials (6 papers), Metal and Thin Film Mechanics (6 papers), Semiconductor materials and devices (5 papers), Nanowire Synthesis and Applications (3 papers) and ZnO doping and properties (3 papers). The work is most often cited by research in Condensed Matter Physics (686 citations), Materials Chemistry (629 citations), Electronic, Optical and Magnetic Materials (175 citations), Atomic and Molecular Physics, and Optics (244 citations) and Electrical and Electronic Engineering (420 citations). D. I. Florescu has collaborated with scholars based in United States. Frequent co-authors include Fred H. Pollak, Alexander A. Balandin, Jin Zou, D. Kotchetkov, J. Ramer, E. Armour, V. M. Asnin, V. Merai, Dongzhu Lu and D. Kotchetkov. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Crystal Growth, Journal of Electronic Materials and Journal of Non-Crystalline Solids.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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