S. Lawrence Selvaraj

679 citations

23 papers · 590 indexed · h-index 11

Co-authors: Takashi Egawa Geok Ing Ng S. Arulkumaran S. Vicknesh Francis P. Xavier Toshiharu Kubo Joseph J. Freedsman Sai‐Chun Tan
Topics: GaN-based semiconductor devices and materials (20 papers)Ga2O3 and related materials (15 papers)Semiconductor materials and devices (14 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters Journal of Materials Science Japanese Journal of Applied Physics
Partner nations: Japan Singapore United States

In The Last Decade

S. Lawrence Selvaraj

22 papers receiving 561 citations

Peers

Countries citing papers authored by S. Lawrence Selvaraj

Since Specialization

Citations

This map shows the geographic impact of S. Lawrence Selvaraj's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Lawrence Selvaraj with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Lawrence Selvaraj more than expected).

Fields of papers citing papers by S. Lawrence Selvaraj

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Lawrence Selvaraj. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Lawrence Selvaraj. The network helps show where S. Lawrence Selvaraj may publish in the future.

Co-authorship network of co-authors of S. Lawrence Selvaraj

This figure shows the co-authorship network connecting the top 25 collaborators of S. Lawrence Selvaraj. A scholar is included among the top collaborators of S. Lawrence Selvaraj based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Lawrence Selvaraj. S. Lawrence Selvaraj is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Process Uniformity and Challenges of AlGaN/GaN MIS-HEMTs on 200-mm Si (111) Substrates Fabricated with CMOS-Compatible Process and Integration 2015 ·Journal of Electronic Materials ·S. Lawrence Selvaraj,(unknown),Wei Wang,Zhixian Chen,(unknown),(unknown),G. Q. Lo	9
2	Effect of Carbon Doping and Crystalline Quality on the Vertical Breakdown Characteristics of GaN Layers Grown on 200-mm Silicon Substrates 2015 ·Journal of Electronic Materials ·(unknown),S. Lawrence Selvaraj,(unknown),Surani Bin Dolmanan,Thirumaleshwara N. Bhat,N.L. Yakovlev,S. Tripathy,G. Q. Lo	9
3	1.4 kV breakdown voltage for MOCVD grown AlGaN/GaN HEMTs on Si substrate 2012 ·S. Lawrence Selvaraj,(unknown),Akio Wakejima,Takashi Egawa	6
4	Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate 2011 ·Applied Physics Letters ·S. Lawrence Selvaraj,(unknown),Takashi Egawa	27
5	Enhanced mobility for MOCVD grown AlGaN/GaN HEMTs on Si substrate 2011 ·S. Lawrence Selvaraj,(unknown),Takashi Egawa	3
6	Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors 2011 ·Japanese Journal of Applied Physics ·Joseph J. Freedsman,Toshiharu Kubo,S. Lawrence Selvaraj,Takashi Egawa	13
7	Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors 2011 ·Japanese Journal of Applied Physics ·Joseph J. Freedsman,Toshiharu Kubo,S. Lawrence Selvaraj,Takashi Egawa	5
8	Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si 2011 ·IEEE Electron Device Letters ·(unknown),S. Lawrence Selvaraj,Takashi Egawa	118
9	Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V$^{2}$ $\Omega^{-1}$ cm$^{-2}$) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si 2011 ·Applied Physics Express ·S. Arulkumaran,S. Vicknesh,Geok Ing Ng,S. Lawrence Selvaraj,Takashi Egawa	49
10	Correlation between growth pits, optical and structural properties of AlGaN/GaN high‐electron‐mobility transistors on 4″ silicon substrate 2010 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown),(unknown),Yusuke Sakai,S. Lawrence Selvaraj,Takashi Egawa,Takashi Jimbo	3
11	High vertical breakdown strength in with low specific on‐resistance AlGaN/AlN/GaN HEMTs on silicon 2010 ·physica status solidi (RRL) - Rapid Research Letters ·S. Arulkumaran,S. Vicknesh,Geok Ing Ng,(unknown),S. Lawrence Selvaraj,Takashi Egawa	16
12	Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers 2010 ·Applied Physics Letters ·Sai‐Chun Tan,S. Lawrence Selvaraj,Takashi Egawa	8
13	MOCVD grown normally-OFF type AlGaN/GaN HEMTs on 4 inch Si using p-InGaN cap layer with high breakdown 2010 ·S. Lawrence Selvaraj,(unknown),Takashi Egawa	10
14	Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers 2009 ·IEEE Electron Device Letters ·S. Lawrence Selvaraj,(unknown),Takashi Egawa	193
15	Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon 2009 ·Applied Physics Express ·S. Lawrence Selvaraj,(unknown),Takashi Egawa	33
16	Enhancing the breakdown voltage by growing 9 µm thick AlGaN/GaN HEMTs on 4 inch silicon 2009 ·S. Lawrence Selvaraj,(unknown),Takashi Egawa	1
17	Comparison of electrical properties in GaN grown on Si(111) and c-sapphire substrate by MOVPE 2008 ·Journal of Crystal Growth ·(unknown),(unknown),S. Lawrence Selvaraj,Takashi Egawa	11
18	Al N ∕ Al Ga N ∕ Ga N metal-insulator-semiconductor high-electron-mobility transistor on 4in. silicon substrate for high breakdown characteristics 2007 ·Applied Physics Letters ·S. Lawrence Selvaraj,(unknown),(unknown),Takashi Egawa	46
19	Three-zone furnace: Apparatus to grow doped crystals from two materials which have wide difference in sublimation temperatures 2003 ·Journal of Materials Science ·S. Lawrence Selvaraj,Francis P. Xavier	1
20	Growth of phthalocyanine doped anthracene crystal using a three-zone furnace by vacuum sublimation method 2001 ·Journal of Crystal Growth ·S. Lawrence Selvaraj,Francis P. Xavier	6

About S. Lawrence Selvaraj

S. Lawrence Selvaraj is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 23 papers that have together received 590 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (20 papers), Ga2O3 and related materials (15 papers) and Semiconductor materials and devices (14 papers). The work is most often cited by research in Condensed Matter Physics (564 citations), Electronic, Optical and Magnetic Materials (346 citations) and Electrical and Electronic Engineering (405 citations). S. Lawrence Selvaraj has collaborated with scholars based in Japan, Singapore and United States. Frequent co-authors include Takashi Egawa, Geok Ing Ng, S. Arulkumaran, S. Vicknesh, Francis P. Xavier, Toshiharu Kubo, Joseph J. Freedsman, Sai‐Chun Tan, Shuxin Tan and Akio Wakejima. Their work appears in journals such as Applied Physics Letters, Journal of Materials Science and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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