A.O. Adan

454 total citations
22 papers, 358 citations indexed

About

A.O. Adan is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Hardware and Architecture. According to data from OpenAlex, A.O. Adan has authored 22 papers receiving a total of 358 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 1 paper in Condensed Matter Physics and 1 paper in Hardware and Architecture. Recurrent topics in A.O. Adan's work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Silicon Carbide Semiconductor Technologies (6 papers). A.O. Adan is often cited by papers focused on Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Silicon Carbide Semiconductor Technologies (6 papers). A.O. Adan collaborates with scholars based in United States, Hungary and Canada. A.O. Adan's co-authors include Toshihiko Yoshimasu, Daisuke Tanaka, Minoru Fukumi, Mitsumasa Koyanagi, K. Suzuki, Makoto Hayashi, M. Miyamoto, H. Shimizu, Shinji Ono and Seiji Takeuchi and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEICE Transactions on Electronics.

In The Last Decade

A.O. Adan

20 papers receiving 333 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A.O. Adan United States 9 351 35 31 28 17 22 358
Jan-Erik Mueller Germany 10 335 1.0× 36 1.0× 24 0.8× 32 1.1× 37 2.2× 34 348
Y. Taur United States 10 239 0.7× 22 0.6× 18 0.6× 36 1.3× 50 2.9× 19 264
J. Dunn United States 13 463 1.3× 18 0.5× 21 0.7× 39 1.4× 40 2.4× 36 472
Said Rami United States 7 206 0.6× 22 0.6× 10 0.3× 27 1.0× 13 0.8× 21 225
James Victory United States 11 315 0.9× 13 0.4× 6 0.2× 31 1.1× 12 0.7× 31 327
Guan Huei See Singapore 11 341 1.0× 11 0.3× 19 0.6× 42 1.5× 32 1.9× 44 355
D.B. Estreich United States 11 367 1.0× 22 0.6× 26 0.8× 32 1.1× 49 2.9× 20 379
M. Cho Belgium 12 446 1.3× 12 0.3× 50 1.6× 19 0.7× 28 1.6× 24 457
J. Malinowski United States 9 306 0.9× 22 0.6× 15 0.5× 42 1.5× 26 1.5× 30 318
H. Hazama Japan 10 302 0.9× 17 0.5× 35 1.1× 23 0.8× 59 3.5× 28 334

Countries citing papers authored by A.O. Adan

Since Specialization
Citations

This map shows the geographic impact of A.O. Adan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.O. Adan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.O. Adan more than expected).

Fields of papers citing papers by A.O. Adan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.O. Adan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.O. Adan. The network helps show where A.O. Adan may publish in the future.

Co-authorship network of co-authors of A.O. Adan

This figure shows the co-authorship network connecting the top 25 collaborators of A.O. Adan. A scholar is included among the top collaborators of A.O. Adan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.O. Adan. A.O. Adan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Adan, A.O., et al.. (2021). Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis. IEEE Power Electronics Magazine. 8(2). 34–43. 3 indexed citations
2.
3.
Adan, A.O., et al.. (2017). Benchmarking power transistors and power modules for high-temperature operation (Tj∼200°C). 70. 662–667. 5 indexed citations
4.
Adan, A.O., et al.. (2016). Robust 600 V GaN high electron mobility transistor technology on GaN-on-Si with 400 V, 5 µs load-short-circuit withstand capability. Japanese Journal of Applied Physics. 55(4S). 04EG01–04EG01. 26 indexed citations
5.
Adan, A.O., Mitsumasa Koyanagi, & Minoru Fukumi. (2008). Physical Model of Noise Mechanisms in SOI and Bulk-Silicon MOSFETs for RF Applications. IEEE Transactions on Electron Devices. 55(3). 872–880. 14 indexed citations
6.
Adan, A.O., et al.. (2003). Electromagnetic coupling effects in RFCMOS circuits. 39–42. 20 indexed citations
7.
Adan, A.O., et al.. (2003). ESD protection of RF circuits in standard CMOS process. 31–34. 4 indexed citations
8.
Adan, A.O., et al.. (2003). The off leakage in SOI-MOS transistors and the impact on the standby current of ULSI's. e80 c. 34–35. 2 indexed citations
9.
Adan, A.O., et al.. (2002). SOI as a mainstream IC technology. 9–12. 12 indexed citations
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11.
Adan, A.O., et al.. (2002). A scaled 0.6 μm high speed PLD technology using single-poly EEPROM's. 55–58. 4 indexed citations
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Adan, A.O., et al.. (2002). Analysis of submicron double-gated polysilicon MOS thin film transistors. 399–402. 4 indexed citations
14.
Adan, A.O., et al.. (2002). Linearity and low-noise performance of SOI MOSFETs for RF applications. IEEE Transactions on Electron Devices. 49(5). 881–888. 86 indexed citations
15.
16.
Adan, A.O., et al.. (2001). OFF-State leakage current mechanisms in bulkSi and SOI MOSFETs and their impact on CMOS ULSIs standby current. IEEE Transactions on Electron Devices. 48(9). 2050–2057. 45 indexed citations
17.
Adan, A.O., et al.. (2001). RF Noise Characteristics of SOI MOSFET's. 2 indexed citations
18.
19.
Adan, A.O.. (1997). An Advanced Shallow SIMOX/CMOS Technology for High Performance Portable Systems. IEICE Transactions on Electronics. 80(3). 407–416. 6 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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