Shigeyoshi Usami

754 citations

49 papers · 594 indexed · h-index 10

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 38
- GaN-based semiconductor devices and materials 38
Electronic, Optical and Magnetic Materials 16
- Ga2O3 and related materials 15

Co-authors: Yoshio Honda Hiroshi Amano Atsushi Tanaka Manato Deki Shugo Nitta Maki Kushimoto Yuto Ando Kentaro Nagamatsu
Journals: Japanese Journal of Applied Physics (13 papers)Journal of Applied Physics (5 papers)Journal of Crystal Growth (5 papers)Applied Physics Express (4 papers)Applied Physics Letters (3 papers)
Partner nations: Japan United States Germany

In The Last Decade

Shigeyoshi Usami

47 papers receiving 585 citations

Peers

Countries citing papers authored by Shigeyoshi Usami

Since Specialization

Citations

This map shows the geographic impact of Shigeyoshi Usami's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shigeyoshi Usami with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shigeyoshi Usami more than expected).

Fields of papers citing papers by Shigeyoshi Usami

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shigeyoshi Usami. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shigeyoshi Usami. The network helps show where Shigeyoshi Usami may publish in the future.

Co-authors

The 25 scholars most cited alongside Shigeyoshi Usami, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Shigeyoshi Usami Line = papers co-authored together Shigeyoshi Usami links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction Journal of Applied Physics ·Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Shigeyoshi Usami, Masayuki Imanishi, Yojiro Mori, K. Sumitani, Yasuhiko Imai, Shigeru Kimura, Akira Sakai	2024	2
2	The impact of crystal phase transition on the hardness and structure of kidney stones Urolithiasis ·Uta Michibata, Mihoko Maruyama, Yutaro Tanaka, Masashi Yoshimura, Hiroshi Yoshikawa, Kazufumi Takano, Yoshihiro Furukawa, Koichi Momma, Rie Tajiri, Kazumi Taguchi, Shuzo Hamamoto, Atsushi Okada, Kenjiro Kohri, Takahiro Yasui, Shigeyoshi Usami, Masayuki Imanishi, Yusuke Mori	2024	4
3	Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na‐Flux Method and Enlargement of the Substrate Surpassing 6 Inches physica status solidi (RRL) - Rapid Research Letters ·Masayuki Imanishi, Shigeyoshi Usami, Kosuke Murakami, Kanako Okumura, Kosuke Nakamura, Keisuke Kakinouchi, Yohei Otoki, Tomio Yamashita, Naohiro Tsurumi, Satoshi Tamura, Hiroshi Ohno, Yoshio Okayama, Taku Fujimori, Seiji Nagai, Miki Moriyama, Yusuke Mori	2024	4
4	Conduction mechanism of Schottky contacts fabricated on etch pits originating from single threading dislocation in a highly Si-doped HVPE GaN substrate Materials Science in Semiconductor Processing ·Toshikazu Satō, Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi, Shigeyoshi Usami, Yusuke Mori, Akira Sakai	2023	4
5	Elastic constants of GaN grown by the oxide vapor phase epitaxy method Applied Physics Express ·Hiroki Fukuda, Akira Nagakubo, Shigeyoshi Usami, Masayuki Imanishi, Yusuke Mori, Hirotsugu Ogi	2023	2
6	Reducing GaN crystal dislocations through lateral growth on uneven seed crystal surfaces using the Na-flux method Japanese Journal of Applied Physics ·Shogo Washida, Masayuki Imanishi, Ricksen Tandryo, Kazuma Hamada, Kosuke Murakami, Shigeyoshi Usami, Mihoko Maruyama, Masashi Yoshimura, Yusuke Mori	2023	5
7	MP05-07 VALIDATING THE THEORY OF PHASE TRANSITION FROM CALCIUM OXALATE DIHYDRATE TO MONOHYDRATE IN THE STONE FORMATION: THE FIRST ARTIFICIAL IN VIVO EXPERIMENT The Journal of Urology ·Mihoko Maruyama, Uta Michibata, Yutaro Tanaka, Hiroshi Yoshikawa, Kazufumi Takano, Rie Tajiri, Kazumi Taguchi, Shuzo Hamamoto, Atsushi Okada, Takahiro Yasui, Shigeyoshi Usami, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori	2023	1
8	Monitoring of GaN crystal growth rate in the Na flux growth via electroresistometry of Ga-Na solution Journal of Crystal Growth ·Ricksen Tandryo, Koichi Itozawa, Kosuke Murakami, Hitoshi Kubo, Masayuki Imanishi, Shigeyoshi Usami, Mihoko Maruyama, Masashi Yoshimura, Yusuke Mori	2023	4
9	Determination of the electron trap level in Fe-doped GaN by phonon-assisted conduction phenomenon Applied Physics Express ·Hiroki Fukuda, Akira Nagakubo, Shigeyoshi Usami, Masashi Ikeda, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, K. Adachi, Hirotsugu Ogi	2022	5
10	Influence of oxygen-related defects on the electronic structure of GaN Japanese Journal of Applied Physics ·Satoshi Ohata, Takahiro Kawamura, Toru Akiyama, Shigeyoshi Usami, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Tomoaki Sumi, Junichi Takino	2022	3
11	Kyropoulos growth of a 300 g SrB ₄ O ₇ single crystal using a twin-type stirring blade Japanese Journal of Applied Physics ·Yasunori Tanaka, Ryota Murai, Yoshinori Takahashi, Melvin John F. Empizo, Shigeyoshi Usami, Mihoko Maruyama, Masayuki Imanishi, Yusuke Mori, Masashi Yoshimura	2022	1
12	Suppression of newly generated threading dislocations at the regrowth interface of a GaN crystal by growth rate control in the Na-flux method Japanese Journal of Applied Physics ·Hyoga Yamauchi, Ricksen Tandryo, Takumi Yamada, Kosuke Murakami, Shigeyoshi Usami, Masayuki Imanishi, Mihoko Maruyama, Masashi Yoshimura, Yusuke Mori	2022	2
13	Bulk laser-induced damage resistance of SrB ₄ O ₇ single crystals under 266 nm DUV laser irradiation Japanese Journal of Applied Physics ·Yutaka Maegaki, Yasunori Tanaka, Haruki Marui, Atsushi Koizumi, Kota Tanaka, Tomosumi Kamimura, Ryota Murai, Yoshinori Takahashi, Melvin John F. Empizo, Shigeyoshi Usami, Masayuki Imanishi, Mihoko Maruyama, Yusuke Mori, Masashi Yoshimura	2022	1
14	Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates Journal of Applied Physics ·Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi, Shigeyoshi Usami, Yusuke Mori, Nobuyuki Ikarashi, Akira Sakai	2021	13
15	Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability Japanese Journal of Applied Physics ·Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura, Yuto Ando, Atsushi Tanaka, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano	2019	51
16	Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method Japanese Journal of Applied Physics ·Jumpei Yamada, Shigeyoshi Usami, Yuki Ueda, Yoshio Honda, Hiroshi Amano, Takahiro Maruyama, Shigeya Naritsuka	2019	7
17	Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage current Applied Physics Letters ·Shigeyoshi Usami, Norihito Mayama, Kazuya Toda, Atsushi Tanaka, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano	2019	43
18	V-shaped dislocations in a GaN epitaxial layer on GaN substrate AIP Advances ·Atsushi Tanaka, Kentaro Nagamatsu, Shigeyoshi Usami, Maki Kushimoto, Manato Deki, Shugo Nitta, Yoshio Honda, Michał Boćkowski, Hiroshi Amano	2019	10
19	Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy Journal of Crystal Growth ·Zhibin Liu, Shugo Nitta, Shigeyoshi Usami, Yoann Robin, Maki Kushimoto, Manato Deki, Yoshio Honda, Markus Pristovsek, Hiroshi Amano	2018	4
20	Development of sustainable smart society based on transformative electronics Mariko Ogura, Yuto Ando, Shigeyoshi Usami, Kentaro Nagamatsu, Maki Kushimoto, Manato Deki, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Markus Pristovsek, H. Kawai, Shuichi Yagi, Hiroshi Amano	2017	2

About Shigeyoshi Usami

Shigeyoshi Usami is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Electrical and Electronic Engineering and Geochemistry and Petrology, having authored 49 papers that have together received 594 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (38 papers), ZnO doping and properties (18 papers), Semiconductor materials and devices (18 papers), Ga2O3 and related materials (15 papers), Semiconductor Quantum Structures and Devices (6 papers), Silicon Carbide Semiconductor Technologies (6 papers), Metal and Thin Film Mechanics (4 papers) and Kidney Stones and Urolithiasis Treatments (4 papers). The work is most often cited by research in Condensed Matter Physics (478 citations), Electronic, Optical and Magnetic Materials (220 citations), Electrical and Electronic Engineering (359 citations), Atomic and Molecular Physics, and Optics (154 citations) and Materials Chemistry (166 citations). Shigeyoshi Usami has collaborated with scholars based in Japan, United States and Germany. Frequent co-authors include Yoshio Honda, Hiroshi Amano, Atsushi Tanaka, Manato Deki, Shugo Nitta, Maki Kushimoto, Yuto Ando, Kentaro Nagamatsu, Yukari Ishikawa and Yongzhao Yao. Their work appears in journals such as Japanese Journal of Applied Physics, Journal of Applied Physics, Journal of Crystal Growth, Applied Physics Express and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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