Akio Wakejima

1.1k citations

84 papers · 855 indexed · h-index 18

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 71
- GaN-based semiconductor devices and materials 71
Electrical and Electronic Engineering 74
- Semiconductor materials and devices 32
- Radio Frequency Integrated Circuit Design 27
- Silicon Carbide Semiconductor Technologies 19
- Advanced Power Amplifier Design 11
- Advancements in Semiconductor Devices and Circuit Design 10

Co-authors: Takashi Egawa Yuji Ando K. Matsunaga Tatsuo Nakayama S. Shimomura Naokatsu Sano Yasuhiro Okamoto S. Hiyamizu
Journals: Electronics Letters (13 papers)Applied Physics Express (10 papers)IEEE Transactions on Electron Devices (9 papers)Applied Physics Letters (5 papers)Japanese Journal of Applied Physics (4 papers)
Partner nations: Japan United States India

In The Last Decade

Akio Wakejima

74 papers receiving 798 citations

Peers

Countries citing papers authored by Akio Wakejima

Since Specialization

Citations

This map shows the geographic impact of Akio Wakejima's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Akio Wakejima with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Akio Wakejima more than expected).

Fields of papers citing papers by Akio Wakejima

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Akio Wakejima. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Akio Wakejima. The network helps show where Akio Wakejima may publish in the future.

Co-authors

The 25 scholars most cited alongside Akio Wakejima, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Akio Wakejima Line = papers co-authored together Akio Wakejima links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High-Efficiency Rectification Characteristics at 2.4 GHz With AlGaN/GaN GADs for Microwave WPT IEEE Microwave and Wireless Technology Letters ·Herbert Mace, 王家爱, KookSun Kim, А. Р. Пушкарский, Qiang Ma, H. Takahashi, Yuji Ando, Akio Wakejima	2025	0
2	AlGaN/GaN Dual‐Gate HEMT Using a High Al Mole Fraction and Thin Barrier Layer Electronics Letters ·Yuji Ando, H. Takahashi, Fernão de Oliveira Salles, Akio Wakejima, Jun Suda	2025	0
3	Impact of a Moderately Doped Contact Layer on Breakdown Voltage in AlGaN/GaN Gated-Anode Diodes for Microwave Rectification IEEE Transactions on Electron Devices ·Takayoshi Watanabe, H. Takahashi, Fernão de Oliveira Salles, Akio Wakejima, Yuji Ando, Jun Suda	2025	0
4	Gated-anode diodes for RF and microwave rectifiers for WPT applications: a simulation study on DC and RF characteristics Journal of Computational Electronics ·А. Р. Пушкарский, MILTON J. EOSENAU, H. Takahashi, Yuji Ando, Akio Wakejima	2024	1
5	Improvement of Gate Length Dependence in Electrical Characteristics of AlGaN/GaN Dual-Gate HEMTs IEEE Transactions on Electron Devices ·Yuji Ando, H. Takahashi, Fernão de Oliveira Salles, Akio Wakejima, Jun Suda	2024	2
6	RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i ‐line stepper lithography Electronics Letters ·Yuji Ando, H. Takahashi, Fernão de Oliveira Salles, Akio Wakejima, Jun Suda	2023	2
7	Laser slice thinning of GaN-on-GaN high electron mobility transistors Scientific Reports ·Atsushi Tanaka, Felix Thoma, Daisuke Kawaguchi, C. MELvlN Aikens, Hirotaka Watanabe, C. Shimomura, Yuto Ando, Yoshio Honda, Bertu Rianto Takaendengan, Akio Wakejima, Yuji Ando, Hiroshi Amano	2022	6
8	An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources IEEE Journal of the Electron Devices Society ·Kangjoon Choi, Takashi Ozawa, A. Veronica Witte, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Lars Kvestad, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Sourajeet Roy, Biplab Sarkar	2022	0
9	Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate IEEE Journal of the Electron Devices Society ·Qiang Ma, Mistar Martaman Sari Gulo, Atsushi Tanaka, Yuji Ando, Akio Wakejima	2022	1
10	Polarization-Engineered Quaternary Barrier InAlGaN/AlGaN Heterostructure Field-Effect Transistors Toward Robust High-Frequency Power Performance in AlGaN Channel Electronics IEEE Transactions on Electron Devices ·Lei Li, Akio Wakejima	2021	4
11	Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions IEEE Transactions on Electron Devices ·Kangjoon Choi, Takashi Ozawa, A. Veronica Witte, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Lars Kvestad, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Sourajeet Roy, Biplab Sarkar	2021	5
12	A Temperature Stable Amplifier Characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si IEEE Access ·MILTON J. EOSENAU, А. Р. Пушкарский, Sergio Rodríguez-Pérez, D. J. Van Lennep, Edward Augustine Magwe, Keisuke Kawamura, Akio Wakejima	2021	20
13	Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate Electronics Letters ·Qiang Ma, Yuji Ando, Akio Wakejima	2021	7
14	Bonding GaN on high thermal conductivity graphite composite with adequate interfacial thermal conductance for high power electronics applications Applied Physics Letters ·Lei Li, Marie Fremeaux-Bacchi, Akio Wakejima	2020	15
15	Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer IEEE Electron Device Letters ·MILTON J. EOSENAU, А. Р. Пушкарский, Sergio Rodríguez-Pérez, D. J. Van Lennep, Edward Augustine Magwe, Keisuke Kawamura, Akio Wakejima	2020	18
16	Polarization engineering via InAlN/AlGaN heterostructures for demonstration of normally-off AlGaN channel field effect transistors Applied Physics Letters ·Lei Li, Ryohei Yamaguchi, Akio Wakejima	2020	6
17	Electrical Characteristics of Gated-Anode Diode for Rectenna Using Normally-Off GaN HEMT IEICE Technical Report; IEICE Tech. Rep. ·H. Takahashi, Yuji Ando, KookSun Kim, Akio Wakejima, Hiroaki Hayashi, Eiji Yagyu, Subhan Zein, Naoki Sakai, Kenji Itoh, Jun Suda	2020	1
18	Transient response of drain current following biasing stress in GaN HEMTs on SiC substrates with a field plate Japanese Journal of Applied Physics ·Qiang Ma, S Suciu, Yuji Ando, Akio Wakejima	2020	7
19	Observation of 8600 K electron temperature in AlGaN/GaN high electron mobility transistors on Si substrate Semiconductor Science and Technology ·潘博文, Allen Institute, Akio Wakejima, Takashi Egawa	2016	4
20	Influence of GaN Stress on Threshold Voltage Shift in AlGaN/GaN High-Electron-Mobility Transistors on Si under Off-State Electrical Bias Applied Physics Express ·Noemí Andrés, Akio Wakejima, Takashi Egawa	2013	19

About Akio Wakejima

Akio Wakejima is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films, having authored 84 papers that have together received 855 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (71 papers), Semiconductor materials and devices (32 papers), Radio Frequency Integrated Circuit Design (27 papers), Semiconductor Quantum Structures and Devices (19 papers), Silicon Carbide Semiconductor Technologies (19 papers), Ga2O3 and related materials (14 papers), Advanced Power Amplifier Design (11 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). The work is most often cited by research in Condensed Matter Physics (585 citations), Electronic, Optical and Magnetic Materials (227 citations), Electrical and Electronic Engineering (676 citations), Atomic and Molecular Physics, and Optics (301 citations) and Materials Chemistry (181 citations). Akio Wakejima has collaborated with scholars based in Japan, United States and India. Frequent co-authors include Takashi Egawa, Yuji Ando, K. Matsunaga, Tatsuo Nakayama, S. Shimomura, Naokatsu Sano, Yasuhiro Okamoto, S. Hiyamizu, Akira Adachi and Yasunori Okamoto. Their work appears in journals such as Electronics Letters, Applied Physics Express, IEEE Transactions on Electron Devices, Applied Physics Letters and Japanese Journal of Applied Physics.

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