J.J. Zhu

1.1k total citations
71 papers, 926 citations indexed

About

J.J. Zhu is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J.J. Zhu has authored 71 papers receiving a total of 926 indexed citations (citations by other indexed papers that have themselves been cited), including 64 papers in Condensed Matter Physics, 35 papers in Atomic and Molecular Physics, and Optics and 28 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J.J. Zhu's work include GaN-based semiconductor devices and materials (64 papers), Semiconductor Quantum Structures and Devices (34 papers) and Ga2O3 and related materials (28 papers). J.J. Zhu is often cited by papers focused on GaN-based semiconductor devices and materials (64 papers), Semiconductor Quantum Structures and Devices (34 papers) and Ga2O3 and related materials (28 papers). J.J. Zhu collaborates with scholars based in China, Pakistan and Germany. J.J. Zhu's co-authors include Degang Zhao, Desheng Jiang, Hui Yang, Ping Chen, Z.S. Liu, Jing Yang, Shuxiao Zhang, L. C. Le, Wei Liu and Xiangyang Li and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

J.J. Zhu

69 papers receiving 881 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.J. Zhu China 17 802 410 378 329 274 71 926
J. Massies France 15 557 0.7× 285 0.7× 350 0.9× 541 1.6× 372 1.4× 36 964
Lianshan Wang China 18 849 1.1× 429 1.0× 540 1.4× 224 0.7× 357 1.3× 90 1.1k
E. E. Zavarin Russia 16 682 0.9× 300 0.7× 306 0.8× 355 1.1× 348 1.3× 124 898
G. P. Yablonskii Belarus 15 365 0.5× 261 0.6× 401 1.1× 296 0.9× 336 1.2× 109 738
M. Baeumler Germany 17 490 0.6× 247 0.6× 377 1.0× 495 1.5× 585 2.1× 64 1.1k
Manato Deki Japan 18 805 1.0× 427 1.0× 261 0.7× 195 0.6× 645 2.4× 70 1.0k
W. Limmer Germany 19 501 0.6× 633 1.5× 962 2.5× 753 2.3× 547 2.0× 64 1.5k
Johji Nishio Japan 16 497 0.6× 283 0.7× 323 0.9× 574 1.7× 862 3.1× 87 1.3k
Emmanouil Dimakis Greece 25 814 1.0× 549 1.3× 615 1.6× 549 1.7× 494 1.8× 72 1.4k
Yen-Cheng Lu Taiwan 17 508 0.6× 383 0.9× 395 1.0× 212 0.6× 248 0.9× 30 925

Countries citing papers authored by J.J. Zhu

Since Specialization
Citations

This map shows the geographic impact of J.J. Zhu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.J. Zhu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.J. Zhu more than expected).

Fields of papers citing papers by J.J. Zhu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.J. Zhu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.J. Zhu. The network helps show where J.J. Zhu may publish in the future.

Co-authorship network of co-authors of J.J. Zhu

This figure shows the co-authorship network connecting the top 25 collaborators of J.J. Zhu. A scholar is included among the top collaborators of J.J. Zhu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.J. Zhu. J.J. Zhu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhou, Lei, Jichao Hu, Jinfeng Zhang, et al.. (2025). Precise thermal dissipation of Ga2O3 devices integrated with diamond heat spreading layer. Materials Today Communications. 47. 113191–113191.
2.
Liu, Lingli, Gui Lei, Lei Hu, et al.. (2025). Bi-Doped Commercial Hard Carbon with Enhanced Slope Capacity to Deliver Superior Rate Performance for Sodium-Ion Batteries. ACS Applied Energy Materials. 8(7). 4211–4219. 2 indexed citations
3.
Yang, Jing, Degang Zhao, Desheng Jiang, et al.. (2018). Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer. Optics & Laser Technology. 111. 810–813. 9 indexed citations
4.
Du, Q., Shuo Lin, C. J. Tang, et al.. (2018). Measurement of the fast neutron background at the China Jinping Underground Laboratory. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 889. 105–112. 6 indexed citations
5.
Yang, Jing, Degang Zhao, Desheng Jiang, et al.. (2017). Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes. Scientific Reports. 7(1). 44850–44850. 9 indexed citations
6.
Zhao, Desheng, Desheng Jiang, Ping Chen, et al.. (2016). The effectiveness of electron blocking layer in InGaN‐based laser diodes with different indium content. physica status solidi (a). 213(8). 2223–2228. 9 indexed citations
7.
Liang, Feng, Ping Chen, Dan Zhao, et al.. (2016). Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC. Chemical Physics Letters. 651. 76–79. 4 indexed citations
8.
Yang, Jing, Degang Zhao, Desheng Jiang, et al.. (2016). Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes. Optics Express. 24(13). 13824–13824. 16 indexed citations
9.
Zhao, Degang, Jing Yang, Desheng Jiang, et al.. (2016). Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells. Superlattices and Microstructures. 97. 186–192. 17 indexed citations
10.
Yang, Jing, Degang Zhao, Desheng Jiang, et al.. (2016). Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses. Vacuum. 129. 99–104. 6 indexed citations
11.
Liang, Feng, Ping Chen, Degang Zhao, et al.. (2016). Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD. Applied Physics A. 122(9). 4 indexed citations
12.
Chen, Ping, Degang Zhao, Desheng Jiang, et al.. (2016). The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes. AIP Advances. 6(3). 5 indexed citations
13.
Liu, Zongshun, Degang Zhao, Desheng Jiang, et al.. (2015). Differential resistance of GaN-based laser diodes with and without polarization effect. Applied Optics. 54(29). 8706–8706. 7 indexed citations
14.
Li, X. J., Desheng Zhao, Desheng Jiang, et al.. (2014). The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN. Journal of Applied Physics. 116(16). 11 indexed citations
15.
Yang, Jing, Degang Zhao, Desheng Jiang, et al.. (2014). Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films. Journal of Applied Physics. 115(16). 40 indexed citations
16.
Majid, Abdul, Akbar Ali, J.J. Zhu, Y.T. Wang, & Hui Yang. (2008). An evidence of defect gettering in GaN. Physica B Condensed Matter. 403(13-16). 2495–2499. 5 indexed citations
17.
Majid, Abdul, et al.. (2008). Study of lattice damage produced by neon implantation into AlInN. Journal of Materials Science Materials in Electronics. 20(3). 230–233. 2 indexed citations
18.
Sun, Xin, et al.. (2007). MOCVD growth of InN using a GaN buffer. Superlattices and Microstructures. 43(2). 81–85. 4 indexed citations
19.
Li, Jun, Shijie Xu, Degang Zhao, et al.. (2007). Violet Electroluminescence of AlInGaN–InGaN Multiquantum-Well Light-Emitting Diodes: Quantum-Confined Stark Effect and Heating Effect. IEEE Photonics Technology Letters. 19(10). 789–791. 11 indexed citations
20.
Wu, Minhao, Xinyu Shen, Junfeng Chen, et al.. (2003). Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(1 1 1). Journal of Crystal Growth. 258(1-2). 34–40. 25 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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