Biplab Sarkar

1.8k total citations
75 papers, 1.0k citations indexed

About

Biplab Sarkar is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Biplab Sarkar has authored 75 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Electrical and Electronic Engineering, 47 papers in Condensed Matter Physics and 26 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Biplab Sarkar's work include GaN-based semiconductor devices and materials (47 papers), Semiconductor materials and devices (31 papers) and Ga2O3 and related materials (26 papers). Biplab Sarkar is often cited by papers focused on GaN-based semiconductor devices and materials (47 papers), Semiconductor materials and devices (31 papers) and Ga2O3 and related materials (26 papers). Biplab Sarkar collaborates with scholars based in India, United States and Japan. Biplab Sarkar's co-authors include Zlatko Sitar, Ramón Collazo, Pramod Reddy, Ronny Kirste, Seiji Mita, Bongmook Lee, Veena Misra, Qiang Guo, M. Hayden Breckenridge and Andrew Klump and has published in prestigious journals such as Nature, Advanced Materials and Physical review. B, Condensed matter.

In The Last Decade

Biplab Sarkar

69 papers receiving 987 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Biplab Sarkar India 20 665 517 498 350 168 75 1.0k
Baijun Zhang China 18 741 1.1× 492 1.0× 388 0.8× 384 1.1× 224 1.3× 110 994
Abdullah I. Alhassan United States 14 594 0.9× 422 0.8× 319 0.6× 349 1.0× 320 1.9× 23 937
Leiying Ying China 16 400 0.6× 593 1.1× 168 0.3× 305 0.9× 362 2.2× 82 861
Chun‐Yen Chang Taiwan 21 485 0.7× 1.5k 2.9× 264 0.5× 431 1.2× 615 3.7× 174 1.8k
J. Baur Germany 15 773 1.2× 487 0.9× 318 0.6× 553 1.6× 384 2.3× 28 1.1k
Ying‐Jay Yang Taiwan 20 272 0.4× 759 1.5× 348 0.7× 467 1.3× 274 1.6× 57 1.2k
Chengqun Gui China 17 491 0.7× 391 0.8× 246 0.5× 335 1.0× 212 1.3× 43 845
Yuh‐Jen Cheng Taiwan 16 404 0.6× 876 1.7× 343 0.7× 1.2k 3.3× 334 2.0× 49 1.7k
Kun Han Singapore 19 411 0.6× 467 0.9× 711 1.4× 885 2.5× 74 0.4× 47 1.3k
Danfeng Pan China 17 248 0.4× 409 0.8× 288 0.6× 379 1.1× 165 1.0× 57 785

Countries citing papers authored by Biplab Sarkar

Since Specialization
Citations

This map shows the geographic impact of Biplab Sarkar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Biplab Sarkar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Biplab Sarkar more than expected).

Fields of papers citing papers by Biplab Sarkar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Biplab Sarkar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Biplab Sarkar. The network helps show where Biplab Sarkar may publish in the future.

Co-authorship network of co-authors of Biplab Sarkar

This figure shows the co-authorship network connecting the top 25 collaborators of Biplab Sarkar. A scholar is included among the top collaborators of Biplab Sarkar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Biplab Sarkar. Biplab Sarkar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Cao, Haicheng, Zhiyuan Liu, Xiao Tang, et al.. (2025). Performance Enhancement of n-Type AlN Schottky Barrier Diodes Using Oxygen-Rich Rapid Thermal Annealing Treatment. IEEE Transactions on Electron Devices. 72(3). 1533–1536. 6 indexed citations
2.
Khandelwal, Vishal, et al.. (2025). On Ga2O3 Self‐Switching Nano‐Diodes. Advanced Electronic Materials. 11(11).
3.
Luo, Tian, Shengli Qi, Smriti Singh, et al.. (2024). Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer. Electronics. 13(9). 1679–1679. 1 indexed citations
4.
Khandelwal, Vishal, et al.. (2024). Field management in NiO x /β-Ga2O3 merged-PIN Schottky diodes: simulation studies and experimental validation. Journal of Physics D Applied Physics. 57(44). 445105–445105. 2 indexed citations
5.
Cao, Haicheng, Jiaqiang Li, Xiao Tang, et al.. (2024). Low contact resistivity at the 10−4 Ω cm2 level fabricated directly on n-type AlN. Applied Physics Letters. 125(8). 5 indexed citations
6.
Yuvaraja, Saravanan, et al.. (2023). On band-to-band tunneling and field management in NiOx/β-Ga2O3 PN junction and PiN diodes. Journal of Physics D Applied Physics. 56(47). 475104–475104. 9 indexed citations
7.
Xu, Xiangming, Udo Schwingenschlögl, Biplab Sarkar, et al.. (2023). Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors. Advanced Materials. 35(22). e2211738–e2211738. 20 indexed citations
8.
Xia, Shihong, et al.. (2023). Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation. Optics Letters. 48(18). 4769–4769. 9 indexed citations
9.
Pramanik, Tanmoy, et al.. (2023). Analytical Model of Center Potential in GaN Vertical Junctionless Power Fin-MOSFETs for Fast Device-Design Optimization. IEEE Transactions on Electron Devices. 71(1). 99–106. 4 indexed citations
10.
Singh, Smriti, et al.. (2023). Lateral P–N Junction Photodiodes Using Lateral Polarity Structure GaN Films: A Theoretical Perspective. Journal of Electronic Materials. 52(3). 2148–2157. 2 indexed citations
11.
Bagheri, Pegah, Andrew Klump, Shun Washiyama, et al.. (2022). Doping and compensation in heavily Mg doped Al-rich AlGaN films. Applied Physics Letters. 120(8). 24 indexed citations
12.
Lyle, Luke A. M., et al.. (2022). Evidence of thermionic emission in forward biased β-Ga2O3 Schottky diodes at Boltzmann doping limit. Journal of Applied Physics. 131(2). 15 indexed citations
13.
Ozawa, Takashi, Joel T. Asubar, Masaaki Kuzuhara, et al.. (2022). An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources. IEEE Journal of the Electron Devices Society. 10. 797–807.
14.
Lu, Yi, Vishal Khandelwal, Manoj K. Rajbhar, et al.. (2022). A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction. Journal of Physics D Applied Physics. 56(6). 65104–65104. 25 indexed citations
15.
Ozawa, Takashi, Joel T. Asubar, Masaaki Kuzuhara, et al.. (2021). Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions. IEEE Transactions on Electron Devices. 68(12). 6059–6064. 5 indexed citations
16.
Breckenridge, M. Hayden, Qiang Guo, Andrew Klump, et al.. (2020). Shallow Si donor in ion-implanted homoepitaxial AlN. Applied Physics Letters. 116(17). 28 indexed citations
17.
Washiyama, Shun, Pramod Reddy, Biplab Sarkar, et al.. (2020). The role of chemical potential in compensation control in Si:AlGaN. Journal of Applied Physics. 127(10). 43 indexed citations
18.
Reddy, Pramod, Dolar Khachariya, Dennis Szymanski, et al.. (2020). Role of polarity in SiN on Al/GaN and the pathway to stable contacts. Semiconductor Science and Technology. 35(5). 55007–55007. 9 indexed citations
19.
Sarkar, Biplab, Qiang Guo, Andrew Klump, et al.. (2018). The influence of point defects on the thermal conductivity of AlN crystals. Journal of Applied Physics. 123(18). 31 indexed citations
20.
Sarkar, Biplab, Vimlesh Verma, & P. K. Mukhopadhyay. (1980). Effect of field failure of a d.w.r. generator. IEE Proceedings Generation, Transmission and Distribution [see also IEE Proceedings-Generation, Transmission and Distribution]. 127(2). 82–89. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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