Joel T. Asubar

1.5k total citations
85 papers, 1.2k citations indexed

About

Joel T. Asubar is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Joel T. Asubar has authored 85 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Condensed Matter Physics, 60 papers in Electrical and Electronic Engineering and 37 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Joel T. Asubar's work include GaN-based semiconductor devices and materials (56 papers), Semiconductor materials and devices (36 papers) and Ga2O3 and related materials (32 papers). Joel T. Asubar is often cited by papers focused on GaN-based semiconductor devices and materials (56 papers), Semiconductor materials and devices (36 papers) and Ga2O3 and related materials (32 papers). Joel T. Asubar collaborates with scholars based in Japan, India and Slovakia. Joel T. Asubar's co-authors include Tamotsu Hashizume, Zenji Yatabe, Masaaki Kuzuhara, Hirokuni Tokuda, Naotaka Uchitomi, Kenya Nishiguchi, D. Gregušová, Taketomo Sato, Shota Kaneki and Yujin Hori and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

Joel T. Asubar

78 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Joel T. Asubar Japan 18 934 851 608 423 240 85 1.2k
Cheng‐Tai Kuo United States 15 388 0.4× 299 0.4× 415 0.7× 501 1.2× 171 0.7× 35 879
Toshiyuki Ohno Japan 12 1.2k 1.3× 328 0.4× 1.3k 2.2× 532 1.3× 130 0.5× 54 1.7k
S. Brück Germany 14 313 0.3× 137 0.2× 536 0.9× 536 1.3× 318 1.3× 28 881
D. Martoccia Switzerland 10 173 0.2× 355 0.4× 553 0.9× 1.0k 2.4× 237 1.0× 14 1.1k
F. Clerc Switzerland 13 228 0.2× 362 0.4× 458 0.8× 731 1.7× 257 1.1× 23 966
W. Schoch Germany 17 253 0.3× 273 0.3× 590 1.0× 711 1.7× 593 2.5× 41 1.1k
Cristian Stagarescu United States 12 275 0.3× 265 0.3× 228 0.4× 250 0.6× 161 0.7× 27 616
V. P. Dravid United States 14 239 0.3× 208 0.2× 200 0.3× 449 1.1× 219 0.9× 28 698
P. Lecoeur France 14 1.1k 1.1× 363 0.4× 1.7k 2.8× 1.2k 3.0× 191 0.8× 23 2.0k

Countries citing papers authored by Joel T. Asubar

Since Specialization
Citations

This map shows the geographic impact of Joel T. Asubar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Joel T. Asubar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Joel T. Asubar more than expected).

Fields of papers citing papers by Joel T. Asubar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Joel T. Asubar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Joel T. Asubar. The network helps show where Joel T. Asubar may publish in the future.

Co-authorship network of co-authors of Joel T. Asubar

This figure shows the co-authorship network connecting the top 25 collaborators of Joel T. Asubar. A scholar is included among the top collaborators of Joel T. Asubar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Joel T. Asubar. Joel T. Asubar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kuzuhara, Masaaki, et al.. (2025). Comparison of electrical characteristics of Schottky-gate AlGaN/GaN HEMTs using for V-based and Ti-based ohmic contacts. Micro and Nanostructures. 208. 208387–208387.
2.
3.
Kuzuhara, Masaaki, et al.. (2023). Low thermal budget V/Al/Mo/Au ohmic contacts for improved performance of AlGaN/GaN MIS-HEMTs. Japanese Journal of Applied Physics. 62(11). 110905–110905. 3 indexed citations
4.
Ozawa, Takashi, Joel T. Asubar, Masaaki Kuzuhara, et al.. (2022). An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources. IEEE Journal of the Electron Devices Society. 10. 797–807.
5.
Ozawa, Takashi, Joel T. Asubar, Masaaki Kuzuhara, et al.. (2021). Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions. IEEE Transactions on Electron Devices. 68(12). 6059–6064. 5 indexed citations
6.
Yatabe, Zenji & Joel T. Asubar. (2021). Ornstein–Uhlenbeck process in a human body weight fluctuation. Physica A Statistical Mechanics and its Applications. 582. 126286–126286.
7.
Ozawa, Takashi, Joel T. Asubar, Masaaki Kuzuhara, et al.. (2021). Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs. IEEE Journal of the Electron Devices Society. 9. 570–581. 7 indexed citations
8.
Akabori, Masashi, et al.. (2020). Epitaxial growth and characterization of Cr-doped ZnSnAs 2 thin films on InP substrates. Japanese Journal of Applied Physics. 59(3). 30601–30601. 1 indexed citations
9.
Yamamoto, Akio, Hirokuni Tokuda, Narihito Okada, et al.. (2019). GaN-on-GaN HEMTs with High Breakdown Critical Fields. The Japan Society of Applied Physics. 1 indexed citations
10.
Tokuda, Hirokuni, et al.. (2019). Influence of reactive-ion-etching depth on interface properties in Al 2 O 3 /n-GaN MOS diodes. Japanese Journal of Applied Physics. 58(10). 106503–106503. 7 indexed citations
11.
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Asubar, Joel T., et al.. (2018). Threshold voltage shift in vertical trench GaN-MOSFETs by negative gate-bias stress. The Japan Society of Applied Physics. 1 indexed citations
13.
Asubar, Joel T., et al.. (2018). Correlation of AlGaN/GaN high-electron-mobility transistors electroluminescence characteristics with current collapse. Applied Physics Express. 11(2). 24101–24101. 7 indexed citations
14.
Asubar, Joel T., et al.. (2016). Effect of metal electrode edge irregularities on breakdown voltages of AlGaN/GaN HEMTs. 1–2. 1 indexed citations
15.
Asubar, Joel T., et al.. (2015). Cu/Al/Mo/Au and Ni/Al/Mo/Au ohmic contacts for AlGaN/GaN heterostructures. 28. 42–43. 1 indexed citations
16.
Yatabe, Zenji, Joel T. Asubar, Taketomo Sato, & Tamotsu Hashizume. (2014). Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces. physica status solidi (a). 212(5). 1075–1080. 18 indexed citations
17.
Asubar, Joel T., et al.. (2013). Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 60(10). 2997–3004. 73 indexed citations
18.
Asubar, Joel T., et al.. (2011). Zinc-blende MnAs thin films directly grown on InP (001) substrates as possible source of spin-polarized current. Journal of Crystal Growth. 338(1). 129–133. 20 indexed citations
19.
Asubar, Joel T., et al.. (2008). MBE growth of Mn-doped ZnSnAs2 thin films. Journal of Crystal Growth. 311(3). 929–932. 40 indexed citations
20.
Nakagawa, Hiroyuki, et al.. (2008). Comparison of annealing effects on Zn-doped GaMnAs and undoped GaMnAs epilayers. Applied Surface Science. 254(20). 6648–6652. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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