Rong Zhang

10.8k total citations · 4 hit papers
539 papers, 8.3k citations indexed

About

Rong Zhang is a scholar working on Materials Chemistry, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, Rong Zhang has authored 539 papers receiving a total of 8.3k indexed citations (citations by other indexed papers that have themselves been cited), including 286 papers in Materials Chemistry, 275 papers in Condensed Matter Physics and 237 papers in Electrical and Electronic Engineering. Recurrent topics in Rong Zhang's work include GaN-based semiconductor devices and materials (251 papers), Ga2O3 and related materials (183 papers) and ZnO doping and properties (158 papers). Rong Zhang is often cited by papers focused on GaN-based semiconductor devices and materials (251 papers), Ga2O3 and related materials (183 papers) and ZnO doping and properties (158 papers). Rong Zhang collaborates with scholars based in China, United Kingdom and United States. Rong Zhang's co-authors include Yi Shi, Bin Liu, Youdou Zheng, Zili Xie, Hai Lu, Shulin Gu, Yongbing Xu, Xinran Wang, Dunjun Chen and Jin Wang and has published in prestigious journals such as Physical Review Letters, Advanced Materials and Nature Communications.

In The Last Decade

Rong Zhang

499 papers receiving 8.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

2021 349 citations Hui Guo, Bin Liu et al. Light Science & Applications profile →
Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films

2021 298 citations Wenqing Liu, Wei Niu et al. Nature Communications profile →
A room-temperature NO2 gas sensor based on CuO nanoflakes modified with rGO nanosheets

2021 223 citations Bin Liu, Zili Xie et al. Sensors and Actuators B Chemical profile →
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics

2023 118 citations Feng Zhou, Hehe Gong et al. Nature Communications profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Rong Zhang China	42	5.0k	3.8k	3.1k	2.6k	1.5k	539	8.3k
Bin Liu China	39	3.2k 0.6×	3.3k 0.9×	2.1k 0.7×	2.1k 0.8×	879 0.6×	408	6.2k
Shangjr Gwo Taiwan	46	3.9k 0.8×	3.4k 0.9×	3.7k 1.2×	2.0k 0.8×	2.4k 1.6×	253	8.8k
Martin Eickhoff Germany	44	3.6k 0.7×	3.8k 1.0×	2.1k 0.7×	3.5k 1.4×	1.3k 0.8×	240	8.1k
Shoou‐Jinn Chang Taiwan	53	8.2k 1.7×	8.3k 2.2×	4.6k 1.5×	4.6k 1.8×	2.2k 1.4×	726	13.8k
Christoph Langhammer Sweden	45	2.9k 0.6×	2.6k 0.7×	3.7k 1.2×	988 0.4×	984 0.6×	151	8.2k
Edward T. Yu United States	53	4.3k 0.9×	6.7k 1.8×	2.4k 0.8×	2.8k 1.1×	3.2k 2.1×	258	10.8k
Judy Wu United States	43	3.8k 0.8×	2.9k 0.8×	1.9k 0.6×	1.7k 0.7×	893 0.6×	349	6.7k
Xinqiang Wang China	44	4.2k 0.8×	2.8k 0.7×	2.8k 0.9×	4.1k 1.6×	1.7k 1.1×	498	8.0k
Song Han China	42	4.7k 0.9×	5.0k 1.3×	2.4k 0.8×	538 0.2×	1.5k 1.0×	209	9.1k
Jinn‐Kong Sheu Taiwan	46	3.7k 0.7×	3.5k 0.9×	3.0k 1.0×	5.3k 2.1×	1.9k 1.3×	348	7.9k

Countries citing papers authored by Rong Zhang

Since Specialization

Citations

This map shows the geographic impact of Rong Zhang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Rong Zhang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Rong Zhang more than expected).

Fields of papers citing papers by Rong Zhang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Rong Zhang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Rong Zhang. The network helps show where Rong Zhang may publish in the future.

Co-authorship network of co-authors of Rong Zhang

This figure shows the co-authorship network connecting the top 25 collaborators of Rong Zhang. A scholar is included among the top collaborators of Rong Zhang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Rong Zhang. Rong Zhang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Huang, Shiming, Ling Zhu, Yongxin Zhao, et al.. (2025). Giant magnetoresistance induced by spin-dependent orbital coupling in Fe3GeTe2/graphene heterostructures. Nature Communications. 16(1). 2866–2866. 2 indexed citations

Zhang, Jine, Yequan Chen, Ruijie Xu, et al.. (2025). Large Anomalous Hall Effect in a Noncoplanar Magnetic Heterostructure. Advanced Functional Materials. 35(26). 3 indexed citations

Hou, Junwei, Lei Wang, Yu Yan, et al.. (2025). Strain effect on the perpendicular magnetization switching driven by spin–orbit torque. Applied Physics Letters. 127(17).

Yang, Kai, Weikang Zhao, Kun Tang, et al.. (2024). Formation mechanism of SiV in diamond from unintentional silicon doping by microwave plasma chemical vapor deposition. Vacuum. 222. 113027–113027. 3 indexed citations

Li, Zhenhua, Tao Tao, Zili Xie, et al.. (2024). Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 125(11). 1 indexed citations

Gong, Hehe, Feng Zhou, Ming Xiao, et al.. (2024). Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga₂O₃ Heterojunction by Edge Termination Optimization. IEEE Electron Device Letters. 45(8). 1421–1424. 21 indexed citations

Gong, Hehe, Na Sun, Matthew Porter, et al.. (2024). Kilovolt, Low-Barrier Ga₂O₃ JBS diode with Ultra-Low Forward Voltage. The HKU Scholars Hub (University of Hong Kong). 104–107.

Li, Ziyang, Yequan Chen, Jinzhong Zhang, et al.. (2024). Anisotropic phonon dynamics in Dirac semimetal PtTe2 thin films enabled by helicity-dependent ultrafast light excitation. Light Science & Applications. 13(1). 181–181. 1 indexed citations

Xu, Linling, Hui Guo, Jiaqi Tao, et al.. (2024). Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs. Chemistry - A European Journal. 30(27). e202304100–e202304100. 2 indexed citations

10.

Zhou, Feng, Chaoming Liu, Yiheng Li, et al.. (2024). 800-V Irradiation-Hardened Device Technology on GaN-on-SiC Power Integration Platform. 1–4. 3 indexed citations

11.

Lu, Xianyang, Jian Zhou, Yu Yan, et al.. (2023). Efficient spin–orbit torque switching in perpendicularly magnetized CoFeB facilitated by Fe2O3 underlayer. Applied Physics Letters. 123(4). 6 indexed citations

12.

Zhou, Feng, Hehe Gong, Ming Xiao, et al.. (2023). An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics. Nature Communications. 14(1). 4459–4459. 118 indexed citations breakdown →

13.

Yu, Chao, Hai Lu, Rong Zhang, et al.. (2023). Free-running 4H-SiC single-photon detector with ultralow afterpulse probability at 266 nm. Review of Scientific Instruments. 94(3). 33101–33101. 7 indexed citations

14.

Xu, Feifan, Tao Tao, Bin Liu, et al.. (2022). Gallium Nitride Blue/Green Micro-LEDs for High Brightness and Transparency Display. IEEE Electron Device Letters. 44(2). 281–284. 21 indexed citations

15.

Li, Zhenhua, Pengfei Shao, Tao Tao, et al.. (2021). Plasma assisted molecular beam epitaxy growth mechanism of AlGaN epilayers and strain relaxation on AlN templates. Japanese Journal of Applied Physics. 60(7). 75504–75504. 11 indexed citations

16.

Li, Yuewen, Xiangqian Xiu, Wanli Xu, et al.. (2020). Microstructural analysis of heteroepitaxial β-Ga ₂ O ₃ films grown on (0001) sapphire by halide vapor phase epitaxy. Journal of Physics D Applied Physics. 54(1). 14003–14003. 19 indexed citations

17.

Tong, Tong, Yunfeng Chen, Shuchao Qin, et al.. (2019). Sensitive and Ultrabroadband Phototransistor Based on Two‐Dimensional Bi₂O₂Se Nanosheets. Advanced Functional Materials. 29(50). 127 indexed citations

18.

Zhu, Chunhui, Tong Tong, Yujie Liu, et al.. (2018). Observation of bimolecular recombination in high mobility semiconductor Bi2O2Se using ultrafast spectroscopy. Applied Physics Letters. 113(6). 12 indexed citations

19.

Dong, Yan, Dong-Hyeok Son, J.‐H. Lee, et al.. (2017). AlGaN/GaN heterostructure pH sensor with multi-sensing segments. Sensors and Actuators B Chemical. 260. 134–139. 53 indexed citations

20.

Niu, Wei, Yulin Gan, Dennis Valbjørn Christensen, et al.. (2017). Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces. Technical University of Denmark, DTU Orbit (Technical University of Denmark, DTU). 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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