M. Bude

533 total citations
5 papers, 409 citations indexed

About

M. Bude is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Bude has authored 5 papers receiving a total of 409 indexed citations (citations by other indexed papers that have themselves been cited), including 5 papers in Electrical and Electronic Engineering, 1 paper in Atomic and Molecular Physics, and Optics and 1 paper in Materials Chemistry. Recurrent topics in M. Bude's work include Semiconductor materials and devices (5 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and Integrated Circuits and Semiconductor Failure Analysis (2 papers). M. Bude is often cited by papers focused on Semiconductor materials and devices (5 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and Integrated Circuits and Semiconductor Failure Analysis (2 papers). M. Bude collaborates with scholars based in United States, Belgium and Singapore. M. Bude's co-authors include Petri I. Räisänen, David A. Muller, G. D. Wilk, M.-Y. Ho, B. Busch, Bert Brijs, Wilfried Vandervorst, T. Sorsch, T. Conard and J. L. Grazul and has published in prestigious journals such as Journal of Applied Physics.

In The Last Decade

M. Bude

5 papers receiving 392 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Bude United States	4	392	217	55	42	19	5	409
M.-Y. Ho United States	5	577 1.5×	331 1.5×	76 1.4×	72 1.7×	23 1.2×	6	601
D. Hrunski Germany	9	337 0.9×	262 1.2×	49 0.9×	28 0.7×	16 0.8×	14	369
P. Sivasubramani United States	11	424 1.1×	245 1.1×	64 1.2×	63 1.5×	17 0.9×	26	445
Elke Erben Germany	12	347 0.9×	170 0.8×	44 0.8×	31 0.7×	9 0.5×	31	364
Woon-Il Choi South Korea	6	321 0.8×	193 0.9×	39 0.7×	24 0.6×	12 0.6×	14	382
B. Kniknie Netherlands	11	420 1.1×	405 1.9×	58 1.1×	53 1.3×	9 0.5×	21	472
Patrick M. Lenahan United States	12	656 1.7×	283 1.3×	29 0.5×	56 1.3×	10 0.5×	26	691
Y. Ma United States	9	307 0.8×	147 0.7×	37 0.7×	37 0.9×	11 0.6×	17	320
Tsunehiro Ino Japan	11	447 1.1×	152 0.7×	44 0.8×	80 1.9×	14 0.7×	27	487
M. S. Joo Singapore	7	363 0.9×	168 0.8×	51 0.9×	66 1.6×	11 0.6×	13	400

Countries citing papers authored by M. Bude

Since Specialization

Citations

This map shows the geographic impact of M. Bude's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Bude with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Bude more than expected).

Fields of papers citing papers by M. Bude

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Bude. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Bude. The network helps show where M. Bude may publish in the future.

Co-authorship network of co-authors of M. Bude

This figure shows the co-authorship network connecting the top 25 collaborators of M. Bude. A scholar is included among the top collaborators of M. Bude based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Bude. M. Bude is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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5 of 5 papers shown

1.

Ho, M.-Y., Hao Gong, G. D. Wilk, et al.. (2003). Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition. Journal of Applied Physics. 93(3). 1477–1481. 149 indexed citations

2.

Baumann, F.H., C.S. Rafferty, M.R. Pinto, et al.. (2002). A highly manufacturable corner rounding solution for 0.18 μm shallow trench isolation. 661–664. 14 indexed citations

3.

Ho, M.-Y., B. Busch, G. D. Wilk, et al.. (2002). Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers. Journal of Applied Physics. 92(12). 7168–7174. 240 indexed citations

4.

Bude, M., et al.. (2001). Integrated W-silicide metal resistor for advanced CMOS technologies. 216–218. 2 indexed citations

5.

Ma, Y., H.-H. Vuong, F.H. Baumann, et al.. (1999). Enabling shallow trench isolation for 0.1 /spl mu/m technologies and beyond. 161–162. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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