P. D. Ye

1.4k total citations
50 papers, 1.1k citations indexed

About

P. D. Ye is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, P. D. Ye has authored 50 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 23 papers in Materials Chemistry and 5 papers in Biomedical Engineering. Recurrent topics in P. D. Ye's work include Semiconductor materials and devices (35 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Ferroelectric and Negative Capacitance Devices (18 papers). P. D. Ye is often cited by papers focused on Semiconductor materials and devices (35 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Ferroelectric and Negative Capacitance Devices (18 papers). P. D. Ye collaborates with scholars based in United States, China and South Korea. P. D. Ye's co-authors include Yi Xuan, Yanqing Wu, Mengwei Si, Jiangjiang Gu, H. C. Lin, G. D. Wilk, Roy G. Gordon, Tian Shen, Xiao Lyu and Robert Colby and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and International Journal of Biological Macromolecules.

In The Last Decade

P. D. Ye

49 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. D. Ye United States 19 978 353 231 185 73 50 1.1k
Hesameddin Ilatikhameneh United States 16 756 0.8× 533 1.5× 190 0.8× 169 0.9× 44 0.6× 48 1.0k
Guangrui Xia Canada 15 666 0.7× 208 0.6× 131 0.6× 192 1.0× 84 1.2× 76 763
Gijs Bosman United States 15 485 0.5× 365 1.0× 229 1.0× 206 1.1× 95 1.3× 49 648
Lucas Güniat Switzerland 12 349 0.4× 289 0.8× 441 1.9× 241 1.3× 47 0.6× 20 596
A. Souifi France 14 559 0.6× 366 1.0× 151 0.7× 207 1.1× 54 0.7× 45 626
Tuomas Haggrén Finland 13 320 0.3× 194 0.5× 340 1.5× 234 1.3× 42 0.6× 46 529
Barry O’Sullivan Belgium 15 970 1.0× 333 0.9× 99 0.4× 188 1.0× 32 0.4× 109 1.1k
Dongjea Seo South Korea 14 360 0.4× 622 1.8× 207 0.9× 219 1.2× 26 0.4× 27 843
Leathen Shi United States 5 588 0.6× 279 0.8× 196 0.8× 166 0.9× 23 0.3× 5 662

Countries citing papers authored by P. D. Ye

Since Specialization
Citations

This map shows the geographic impact of P. D. Ye's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. D. Ye with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. D. Ye more than expected).

Fields of papers citing papers by P. D. Ye

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. D. Ye. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. D. Ye. The network helps show where P. D. Ye may publish in the future.

Co-authorship network of co-authors of P. D. Ye

This figure shows the co-authorship network connecting the top 25 collaborators of P. D. Ye. A scholar is included among the top collaborators of P. D. Ye based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. D. Ye. P. D. Ye is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Hui, et al.. (2025). A Rare Observation: Forest Dormouse Occupying Nests of White‐Crowned Penduline Tit. Ecology and Evolution. 15(4). e71206–e71206.
2.
Ye, P. D., et al.. (2024). An enhanced bioactive chitosan-modified microemulsion for mucosal healing of ulcerative colitis. International Journal of Biological Macromolecules. 284(Pt 1). 137847–137847. 3 indexed citations
3.
Zhang, Jianyue, Z. Zhang, Hongyi Dou, et al.. (2023). Fluorine Anion-Doped Ultra-Thin InGaO Transistors Overcoming Mobility-Stability Trade-off. 1–4. 8 indexed citations
4.
5.
Liao, Pai-Ying, Z. Zhang, Zehao Lin, et al.. (2022). Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In₂O₃ FETs on Various Thermally Conductive Substrates Including Diamond. 2022 International Electron Devices Meeting (IEDM). 12.4.1–12.4.4. 10 indexed citations
6.
Lyu, Xiao, Mengwei Si, Pragya R. Shrestha, Kin P. Cheung, & P. D. Ye. (2021). Dynamics Studies of Polarization Switching in Ferroelectric Hafnium Zirconium Oxide. 1–3. 2 indexed citations
7.
Shin, SangHoon, et al.. (2016). Substrate and layout engineering to suppress self-heating in floating body transistors. 15.7.1–15.7.4. 27 indexed citations
8.
O’Connor, Eileen, Aileen O׳Mahony, Ian M. Povey, et al.. (2016). Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3. Journal of Applied Physics. 120(23). 5 indexed citations
9.
Luo, Xi, et al.. (2016). Continuous-wave and transient characteristics of phosphorene microwave transistors. arXiv (Cornell University). 14. 1–3. 4 indexed citations
10.
Shin, SangHoon, M. A. Wahab, Kerry Maize, et al.. (2014). Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs. 20.3.1–20.3.4. 18 indexed citations
11.
Conrad, Nathan J., Mengwei Si, SangHoon Shin, et al.. (2014). Low-frequency noise and RTN on near-ballistic III–V GAA nanowire MOSFETs. 20.1.1–20.1.4. 13 indexed citations
12.
Shin, SangHoon, Muhammad Abdul Wahab, Mengwei Si, et al.. (2014). Origin and implications of hot carrier degradation of Gate-all-around nanowire III–V MOSFETs. 4A.3.1–4A.3.6. 15 indexed citations
13.
Shin, SangHoon, Jiangjiang Gu, M. A. Wahab, et al.. (2013). Impact of nanowire variability on performance and reliability of gate-all-around III-V MOSFETs. 7.5.1–7.5.4. 28 indexed citations
14.
Gu, Jiangjiang, Xinwei Wang, Heng Wu, et al.. (2012). 20–80nm Channel length InGaAs gate-all-around nanowire MOSFETs with EOT=1.2nm and lowest SS=63mV/dec. 27.6.1–27.6.4. 28 indexed citations
15.
Gu, Jiangjiang, et al.. (2011). First experimental demonstration of gate-all-around III–V MOSFETs by top-down approach. arXiv (Cornell University). 33.2.1–33.2.4. 82 indexed citations
16.
17.
18.
Aguirre‐Tostado, F. S., Marko Milojević, Christopher L. Hinkle, et al.. (2008). S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates. Applied Physics Letters. 93(6). 48 indexed citations
19.
Wu, Yanqing, H. C. Lin, P. D. Ye, & G. D. Wilk. (2007). Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs. Applied Physics Letters. 90(7). 23 indexed citations
20.
Wu, Yanqing, Yi Xuan, Tian Shen, et al.. (2007). Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics. Applied Physics Letters. 91(2). 65 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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