P. D. Ye

1.4k citations

50 papers · 1.1k indexed · h-index 19

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 35
- Advancements in Semiconductor Devices and Circuit Design 20
- Ferroelectric and Negative Capacitance Devices 18
- Thin-Film Transistor Technologies 8
- Advanced Memory and Neural Computing 7
Materials Chemistry
- MXene and MAX Phase Materials 8
- Electronic and Structural Properties of Oxides 8
- 2D Materials and Applications 6
Condensed Matter Physics top 10%
Atomic and Molecular Physics, and Optics top 10%
Biomedical Engineering

Co-authors: Yi Xuan Yanqing Wu Mengwei Si G. D. Wilk Jiangjiang Gu H. C. Lin Roy G. Gordon Tian Shen
Cited by: Electrical and Electronic Engineering Materials Chemistry Condensed Matter Physics
Journals: Applied Physics Letters (5 papers)Journal of Applied Physics (2 papers)Journal of Electronic Materials (1 paper)
Partner nations: United States China South Korea

In The Last Decade

P. D. Ye

49 papers receiving 1.0k citations

Peers

Countries citing papers authored by P. D. Ye

Since Specialization

Citations

This map shows the geographic impact of P. D. Ye's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. D. Ye with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. D. Ye more than expected).

Fields of papers citing papers by P. D. Ye

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. D. Ye. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. D. Ye. The network helps show where P. D. Ye may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P. D. Ye, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. D. Ye Line = papers co-authored together P. D. Ye links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A Rare Observation: Forest Dormouse Occupying Nests of White‐Crowned Penduline Tit Ecology and Evolution ·Boudaoud,Hui Wang,Jean-Young Kim,P. D. Ye,Wenqi Li,Lin Yan,達郎佐藤,De Chen	2025	0
2	An enhanced bioactive chitosan-modified microemulsion for mucosal healing of ulcerative colitis International Journal of Biological Macromolecules ·K. M. Hahn,P. D. Ye,Yi Zhang,Bartłomiej Czarski,Weihua Xu,Grant Coome,Sergio Bustos N.,Yongzhuo Huang,Bing Wang	2024	3
3	Highly Robust All-Oxide Transistors with Ultrathin In₂O₃ as Channel and Thick In₂O₃ as Metal Gate Towards Vertical Logic and Memory Zehao Lin,Zhen Zhang,Chang Niu,Hongyi Dou,Kun Xu,Md. Saidul Islam,J. Y. Lin,Chang Kyung Sung,Ehab Younis MOSTAFA,Daewon Ha,Haiyan Wang,M. A. Alam,P. D. Ye	2024	6
4	Monolithic 3D Integration of Vertically Stacked CMOS Devices and Circuits with High-Mobility Atomic-Layer-Deposited In ₂ O ₃ n-FET and Polycrystalline Si p-FET: Achieving Large Noise Margin and High Voltage Gain of 134 V/V 2022 International Electron Devices Meeting (IEDM) ·S. V. Babak,M. Njunga Mulikita,Zehao Lin,Claudia Cristina Ríos Rengifo,Pedro José Torreiro Reino,Xiangyou Li,P. D. Ye,Xiao Guo,Mengwei Si	2022	13
5	First Demonstration of BEOL-Compatible Ultrathin AtomicLayer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability 2022 International Electron Devices Meeting (IEDM) ·Dongqi Zheng,Adam Charnas,Wu Liji,Hongyi Dou,大輔山崎,Zehao Lin,Z. Zhang,Jianyue Zhang,Pai-Ying Liao,Mengwei Si,Haiyan Wang,Dana Weinstein,P. D. Ye	2022	27
6	Dynamics Studies of Polarization Switching in Ferroelectric Hafnium Zirconium Oxide Xiao Lyu,Mengwei Si,Pragya R. Shrestha,Kin P. Cheung,P. D. Ye	2021	2
7	Substrate and layout engineering to suppress self-heating in floating body transistors SangHoon Shin,Jason Eite,Sungho Kim,Heng Wu,P. D. Ye,Muhammad A. Alam	2016	27
8	Few-layer black phosporous PMOSFETs with BN/AI<inf>2</inf>O<inf>3</inf> bilayer gate dielectric: Achieving I<inf>on</inf>=850μA/μm, g<inf>m</inf>=340μS/μm, and R<inf>c</inf>=0.58kΩ·μm Paghandeh,Gang Qiu,Mengwei Si,Adam Charnas,Cory A. Milligan,Dmitry Zemlyanov,Hong Zhou,Yuchen Du,Yih‐Jyh Lin,Wilman Tsai,Qing Paduano,Michael Snure,P. D. Ye	2016	12
9	Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3 Journal of Applied Physics ·Bintang Kusuma Nata,Eileen O’Connor,Aileen O׳Mahony,Ian M. Povey,Paul K. Hurley,Dong Lin,P. D. Ye,V. V. Afanas’ev,Michel Houssa,A. Stesmans	2016	5
10	Origin and implications of hot carrier degradation of Gate-all-around nanowire III–V MOSFETs SangHoon Shin,Muhammad Abdul Wahab,Sorin Marius Pirnac,Mengwei Si,Jiangjiang Gu,P. D. Ye,Md Ashraful Alam	2014	15
11	Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs SangHoon Shin,Sorin Marius Pirnac,M. A. Wahab,Kerry Maize,Jiangjiang Gu,Mengwei Si,Ali Shakouri,P. D. Ye,Muhammad A. Alam	2014	18
12	Low-frequency noise and RTN on near-ballistic III–V GAA nanowire MOSFETs Nathan J. Conrad,Mengwei Si,SangHoon Shin,Jiangjiang Gu,Jianyue Zhang,M. A. Alam,P. D. Ye	2014	13
13	Impact of nanowire variability on performance and reliability of gate-all-around III-V MOSFETs SangHoon Shin,Sorin Marius Pirnac,Jiangjiang Gu,M. A. Wahab,Nathan J. Conrad,Mengwei Si,P. D. Ye,Muhammad A. Alam	2013	28
14	First experimental demonstration of gate-all-around III–V MOSFETs by top-down approach arXiv (Cornell University) ·Jiangjiang Gu,Y. Q. Liu,Yanqing Wu,Robert Colby,Roy G. Gordon,P. D. Ye	2011	82
15	Empirical Study of Hall Bars on Few-Layer Graphene on C-Face 4H-SiC Journal of Electronic Materials ·M. L. Bolen,Tian Shen,Jiangjiang Gu,Robert Colby,Eric A. Stach,P. D. Ye,M. A. Capano	2010	8
16	New insight into Fermi-level unpinning on GaAs: Impact of different surface orientations Min Xu,Kunyuan Xu,Viviana Rocío Alfonzo Vargas,Marko Milojević,Tian Shen,O. Koybasi,Yanqing Wu,Robert M. Wallace,P. D. Ye	2009	20
17	First experimental demonstration of 100 nm inversion-mode InGaAs FinFET through damage-free sidewall etching Yanqing Wu,Nozomi Dewa,Tian Shen,Jiangjiang Gu,P. D. Ye	2009	46
18	S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates Applied Physics Letters ·F. S. Aguirre‐Tostado,Marko Milojević,美由季大友,Sushmita Gilbile,Christopher L. Hinkle,Eric M. Vogel,Jin-Soo Kim,Tao Yang,Yi Xuan,P. D. Ye,Robert M. Wallace	2008	48
19	Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs Applied Physics Letters ·Yanqing Wu,H. C. Lin,P. D. Ye,G. D. Wilk	2007	23
20	Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric Applied Physics Letters ·Yi Xuan,P. D. Ye,H. C. Lin,G. D. Wilk	2006	17

About P. D. Ye

P. D. Ye is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics, having authored 50 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (35 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers), Ferroelectric and Negative Capacitance Devices (18 papers), MXene and MAX Phase Materials (8 papers), Thin-Film Transistor Technologies (8 papers), Electronic and Structural Properties of Oxides (8 papers), Advanced Memory and Neural Computing (7 papers) and 2D Materials and Applications (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (978 citations), Materials Chemistry (353 citations) and Condensed Matter Physics (73 citations). P. D. Ye has collaborated with scholars based in United States, China and South Korea. Frequent co-authors include Yi Xuan, Yanqing Wu, Mengwei Si, G. D. Wilk, Jiangjiang Gu, H. C. Lin, Roy G. Gordon, Tian Shen, Xiao Lyu and Robert Colby. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Electronic Materials, International Journal of Biological Macromolecules and Ecology and Evolution.

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