Kai Fu

3.8k citations

126 papers · 3.0k indexed · h-index 32

Impact in

Nuclear Energy and Engineering top 0.5%
Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials

Papers in ⓘ

Condensed Matter Physics 83
- GaN-based semiconductor devices and materials 83
Electronic, Optical and Magnetic Materials 64
- Ga2O3 and related materials 60

Co-authors: Yuji Zhao (56 shared papers)Houqiang Fu (48 shared papers)Yong Cai (26 shared papers)Tsung-Han Yang (25 shared papers)Xuanqi Huang (22 shared papers)Guohao Yu (24 shared papers)Baoshun Zhang (23 shared papers)Jossue Montes (22 shared papers)
Journals: Applied Physics Letters (20 papers)IEEE Electron Device Letters (13 papers)IEEE Transactions on Electron Devices (8 papers)Journal of Applied Physics (5 papers)Applied Physics Express (3 papers)
Partner nations: United States China Hong Kong

In The Last Decade

Kai Fu

119 papers receiving 2.9k citations

Peers

Countries citing papers authored by Kai Fu

Since Specialization

Citations

This map shows the geographic impact of Kai Fu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kai Fu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kai Fu more than expected).

Fields of papers citing papers by Kai Fu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kai Fu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kai Fu. The network helps show where Kai Fu may publish in the future.

Co-authors

The 25 scholars most cited alongside Kai Fu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Kai Fu Line = papers co-authored together Kai Fu links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 126 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Near-Infrared Photodetectors Based on MoTe₂/Graphene Heterostructure with High Responsivity and Flexibility Small ·Wenzhi Yu, Shaojuan Li, Yupeng Zhang, Weiliang Ma, Tian Sun, Jian Yuan, Kai Fu, Qiaoliang Bao	2017	245
2	Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si₃N₄as Gate Dielectric and Passivation Layer IEEE Transactions on Electron Devices ·Zhili Zhang, Guohao Yu, Xiaodong Zhang, Xuguang Deng, Shuiming Li, Yaming Fan, Shichuang Sun, Liang Song, Shuxin Tan, Dongdong Wu, Weiyi Li, Wei Huang, Kai Fu, Yong Cai, Qian Sun, Baoshun Zhang	2016	105
3	Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs IEEE Electron Device Letters ·Ronghui Hao, Weiyi Li, Kai Fu, Guohao Yu, Liang Song, Jie Yuan, Junshuai Li, Xuguang Deng, Xiaodong Zhang, Qi Zhou, Yaming Fan, Wenhua Shi, Yong Cai, Xinping Zhang, Baoshun Zhang	2017	102
4	Characterization of Leakage and Reliability of SiN<sub><italic>x</italic></sub> Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs IEEE Transactions on Electron Devices ·Mengyuan Hua, Cheng Liu, Shu Yang, Shenghou Liu, Kai Fu, Zhihua Dong, Yong Cai, Baoshun Zhang, Kevin J. Chen	2015	99
5	Integration of LPCVD-SiN<inf>x</inf> gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Mengyuan Hua, Zhaofu Zhang, Jin Wei, Jiacheng Lei, Gaofei Tang, Kai Fu, Yong Cai, Baoshun Zhang, Kevin J. Chen	2016	96
6	GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN<sub><italic>x</italic></sub> as Gate Dielectric IEEE Electron Device Letters ·Mengyuan Hua, Cheng Liu, Shu Yang, Shenghou Liu, Kai Fu, Zhihua Dong, Yong Cai, Baoshun Zhang, Kevin J. Chen	2015	83
7	Gallium Nitride Schottky betavoltaic nuclear batteries Energy Conversion and Management ·Min Lü, Guoguang Zhang, Kai Fu, Guohao Yu, Dan Su, Ji-feng Hu	2011	82
8	Solar‐blind ultraviolet photodetector based on graphene/vertical Ga ₂ O ₃ nanowire array heterojunction Nanophotonics ·Tao He, Yukun Zhao, Xiaodong Zhang, Wenkui Lin, Kai Fu, Chi Sun, Fengfeng Shi, Xiaoyu Ding, Guohao Yu, Kai Zhang, Shulong Lu, Xinping Zhang, Baoshun Zhang	2018	75
9	Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment Applied Physics Letters ·Ronghui Hao, Kai Fu, Guohao Yu, Weiyi Li, Jie Yuan, Liang Song, Zhili Zhang, Shichuang Sun, Xiajun Li, Yong Cai, Xinping Zhang, Baoshun Zhang	2016	75
10	Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction Applied Physics Letters ·Jossue Montes, Chen Yang, Houqiang Fu, Tsung-Han Yang, Kai Fu, Hong Chen, Jingan Zhou, Xuanqi Huang, Yuji Zhao	2019	75
11	Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II IEEE Transactions on Electron Devices ·Houqiang Fu, Kai Fu, Srabanti Chowdhury, Tomás Palacios, Yuji Zhao	2021	62
12	A high-capacity polyaniline-intercalated layered vanadium oxide for aqueous ammonium-ion batteries Chemical Communications ·Chunhua Han, Jiao Qun Zhu, Kai Fu, Dan Deng, Wen Luo, Liqiang Mai	2021	59
13	Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I IEEE Transactions on Electron Devices ·Houqiang Fu, Kai Fu, Srabanti Chowdhury, Tomás Palacios, Yuji Zhao	2021	59
14	Flexible Broadband Graphene Photodetectors Enhanced by Plasmonic Cu₃₋_xP Colloidal Nanocrystals Small ·Tian Sun, Yongjie Wang, Wenzhi Yu, Yusheng Wang, Zhigao Dai, Zeke Liu, Bannur Nanjunda Shivananju, Yupeng Zhang, Kai Fu, Babar Shabbir, Wanli Ma, Shaojuan Li, Qiaoliang Bao	2017	58
15	High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings IEEE Electron Device Letters ·Houqiang Fu, Kai Fu, Shanthan Reddy Alugubelli, Chi-Yin Cheng, Xuanqi Huang, Hong Chen, Tsung-Han Yang, Chen Yang, Jingan Zhou, Jossue Montes, Xuguang Deng, Xin Qi, Stephen M. Goodnick, F. A. Ponce, Yuji Zhao	2019	57
16	Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition Applied Physics Letters ·Kai Fu, Houqiang Fu, Hanxiao Liu, Shanthan Reddy Alugubelli, Tsung-Han Yang, Xuanqi Huang, Hong Chen, Izak Baranowski, Jossue Montes, F. A. Ponce, Yuji Zhao	2018	55
17	Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes IEEE Journal of the Electron Devices Society ·Kai Fu, Houqiang Fu, Xuanqi Huang, Tsung-Han Yang, Chi-Yin Cheng, Prudhvi Peri, Hong Chen, Jossue Montes, Chen Yang, Jingan Zhou, Xuguang Deng, Xin Qi, David J. Smith, Stephen M. Goodnick, Yuji Zhao	2020	55
18	AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator IEEE Electron Device Letters ·Zhili Zhang, Weiyi Li, Kai Fu, Guohao Yu, Xiaodong Zhang, Yanfei Zhao, Shichuang Sun, Liang Song, Xuguang Deng, Zheng Xing, Lei Yang, Rongkun Ji, Chunhong Zeng, Yaming Fan, Zhihua Dong, Yong Cai, Bao Shun Zhang	2016	51
19	Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics IEEE Electron Device Letters ·Kai Fu, Houqiang Fu, Xuanqi Huang, Hong Chen, Tsung-Han Yang, Jossue Montes, Chen Yang, Jingan Zhou, Yuji Zhao	2019	51
20	High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination IEEE Electron Device Letters ·Houqiang Fu, Kai Fu, Xuanqi Huang, Hong Chen, Izak Baranowski, Tsung-Han Yang, Jossue Montes, Yuji Zhao	2018	51

About Kai Fu

Kai Fu is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Nuclear Energy and Engineering, Electrical and Electronic Engineering and Materials Chemistry, having authored 126 papers that have together received 3.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (83 papers), Ga2O3 and related materials (60 papers), Semiconductor materials and devices (46 papers), ZnO doping and properties (30 papers), Silicon Carbide Semiconductor Technologies (21 papers), Metal and Thin Film Mechanics (9 papers), Semiconductor Quantum Structures and Devices (7 papers) and Transition Metal Oxide Nanomaterials (6 papers). The work is most often cited by research in Nuclear Energy and Engineering (78 citations), Condensed Matter Physics (1.7k citations), Electronic, Optical and Magnetic Materials (1.4k citations), Electrical and Electronic Engineering (2.0k citations) and Materials Chemistry (1.2k citations). Kai Fu has collaborated with scholars based in United States, China and Hong Kong. Frequent co-authors include Yuji Zhao, Houqiang Fu, Yong Cai, Tsung-Han Yang, Xuanqi Huang, Guohao Yu, Baoshun Zhang, Jossue Montes, Jingan Zhou and Hong Chen. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Applied Physics and Applied Physics Express.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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