Kai Fu

3.8k total citations
126 papers, 3.0k citations indexed

About

Kai Fu is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Kai Fu has authored 126 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 83 papers in Condensed Matter Physics, 83 papers in Electrical and Electronic Engineering and 64 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Kai Fu's work include GaN-based semiconductor devices and materials (83 papers), Ga2O3 and related materials (60 papers) and Semiconductor materials and devices (46 papers). Kai Fu is often cited by papers focused on GaN-based semiconductor devices and materials (83 papers), Ga2O3 and related materials (60 papers) and Semiconductor materials and devices (46 papers). Kai Fu collaborates with scholars based in United States, China and Hong Kong. Kai Fu's co-authors include Yuji Zhao, Houqiang Fu, Yong Cai, Tsung-Han Yang, Xuanqi Huang, Guohao Yu, Baoshun Zhang, Jossue Montes, Jingan Zhou and Hong Chen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Chemical Communications.

In The Last Decade

Kai Fu

119 papers receiving 2.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Kai Fu United States 32 2.0k 1.7k 1.4k 1.2k 402 126 3.0k
Jing Ning China 30 1.5k 0.8× 673 0.4× 1.8k 1.2× 1.5k 1.3× 197 0.5× 150 2.9k
Xuelin Yang China 26 1.1k 0.6× 1.6k 0.9× 991 0.7× 847 0.7× 440 1.1× 174 2.3k
Patrick Fiorenza Italy 29 2.4k 1.2× 869 0.5× 846 0.6× 1.0k 0.9× 607 1.5× 167 3.1k
Sami Suihkonen Finland 24 854 0.4× 1.2k 0.7× 572 0.4× 660 0.6× 390 1.0× 103 1.8k
D. V. Karpinsky Russia 29 487 0.2× 667 0.4× 2.5k 1.7× 2.3k 1.9× 73 0.2× 172 3.2k
Takanori Tsutaoka Japan 21 462 0.2× 342 0.2× 1.8k 1.2× 991 0.8× 234 0.6× 109 2.2k
Kwang Hyeon Baik South Korea 28 1.3k 0.7× 1.3k 0.7× 877 0.6× 1.4k 1.2× 366 0.9× 142 2.4k
Shengrui Xu China 23 859 0.4× 1.1k 0.7× 1.3k 0.9× 1.2k 1.0× 239 0.6× 150 2.1k
Giuseppe Greco Italy 31 2.5k 1.3× 1.7k 1.0× 945 0.7× 1.3k 1.1× 767 1.9× 132 3.6k
Jennifer K. Hite United States 33 1.8k 0.9× 2.0k 1.2× 1.4k 1.0× 2.0k 1.7× 563 1.4× 159 3.5k

Countries citing papers authored by Kai Fu

Since Specialization
Citations

This map shows the geographic impact of Kai Fu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kai Fu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kai Fu more than expected).

Fields of papers citing papers by Kai Fu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kai Fu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kai Fu. The network helps show where Kai Fu may publish in the future.

Co-authorship network of co-authors of Kai Fu

This figure shows the co-authorship network connecting the top 25 collaborators of Kai Fu. A scholar is included among the top collaborators of Kai Fu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kai Fu. Kai Fu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wei, Lai, et al.. (2025). Efficiency Manipulation of Filaments Fusion in UV‐Assisted Direct Ink Writing. Advanced Engineering Materials. 27(4). 1 indexed citations
2.
Wang, Dawei, Dinusha Herath Mudiyanselage, Izak Baranowski, et al.. (2025). Multi-kV AlGaN/GaN Heterojunction Schottky Barrier Diodes With Hydrogen Plasma Guard Array Termination. IEEE Electron Device Letters. 46(6). 960–963. 3 indexed citations
3.
Wang, Handong, Yong Deng, Ruyu Zhang, et al.. (2024). Variations in volatile components and biological activities of essential oils from Citrus aurantium ‘changshanhuyou’ at different growth and ripening stages. Food Research International. 197(Pt 2). 115303–115303. 6 indexed citations
4.
Su, Mingru, Kai Fu, Xueli Chen, et al.. (2023). Electrospinning In0.5Nb24.5O62 nanofibers as a novel anode host with superior lithium storage performance. Electrochimica Acta. 463. 142828–142828. 9 indexed citations
5.
Fu, Kai, Qingyun Xie, Mengyang Yuan, et al.. (2023). Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments. Applied Physics Letters. 123(24). 7 indexed citations
6.
Yuan, Mengyang, John Niroula, Qingyun Xie, et al.. (2023). Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation. IEEE Electron Device Letters. 44(7). 1068–1071. 25 indexed citations
7.
Yuan, Mengyang, Qingyun Xie, Kai Fu, et al.. (2022). GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform. IEEE Electron Device Letters. 43(11). 1842–1845. 24 indexed citations
8.
Fu, Kai, Houqiang Fu, Xuguang Deng, et al.. (2021). The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices. Applied Physics Letters. 118(22). 20 indexed citations
9.
Fu, Kai, et al.. (2021). Characterization of As-Grown and Regrown GaN-on-GaN Structures for Vertical p-n Power Devices. Journal of Electronic Materials. 50(5). 2637–2642. 5 indexed citations
10.
Han, Chunhua, et al.. (2021). A high-capacity polyaniline-intercalated layered vanadium oxide for aqueous ammonium-ion batteries. Chemical Communications. 58(6). 791–794. 59 indexed citations
11.
Huang, Xuanqi, Dongying Li, Houqiang Fu, et al.. (2020). Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures. Nano Energy. 76. 105013–105013. 4 indexed citations
12.
Liu, Hanxiao, Chen Yang, Kai Fu, et al.. (2020). Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films. Applied Physics Letters. 117(10). 13 indexed citations
13.
Yang, Chen, Houqiang Fu, Hanxiao Liu, et al.. (2020). Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment. Applied Physics Letters. 117(5). 9 indexed citations
14.
Fu, Kai, et al.. (2020). Structural breakdown in high power GaN-on-GaN p-n diode devices stressed to failure. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(6). 6 indexed citations
15.
Liu, Hanxiao, et al.. (2019). Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics. Applied Physics Letters. 114(8). 24 indexed citations
16.
Fu, Houqiang, et al.. (2019). Dopant profiling in p-i-n GaN structures using secondary electrons. Journal of Applied Physics. 126(1). 18 indexed citations
17.
Fu, Houqiang, Kai Fu, Hanxiao Liu, et al.. (2019). Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes. Applied Physics Letters. 115(20). 12 indexed citations
18.
Hao, Ronghui, Weiyi Li, Kai Fu, et al.. (2017). Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs. IEEE Electron Device Letters. 38(11). 1567–1570. 102 indexed citations
19.
Sun, Tian, Yongjie Wang, Wenzhi Yu, et al.. (2017). Flexible Broadband Graphene Photodetectors Enhanced by Plasmonic Cu3−xP Colloidal Nanocrystals. Small. 13(42). 58 indexed citations
20.
Yu, Wenzhi, Shaojuan Li, Yupeng Zhang, et al.. (2017). Near-Infrared Photodetectors Based on MoTe2/Graphene Heterostructure with High Responsivity and Flexibility. Small. 13(24). 1700268–1700268. 245 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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