H. C. Chiu

670 total citations
24 papers, 581 citations indexed

About

H. C. Chiu is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, H. C. Chiu has authored 24 papers receiving a total of 581 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 10 papers in Electronic, Optical and Magnetic Materials and 9 papers in Materials Chemistry. Recurrent topics in H. C. Chiu's work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Ga2O3 and related materials (10 papers). H. C. Chiu is often cited by papers focused on Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Ga2O3 and related materials (10 papers). H. C. Chiu collaborates with scholars based in Taiwan, United States and Belgium. H. C. Chiu's co-authors include J. Kwo, M. Hong, M. Hong, Yen‐Chung Chang, T. D. Lin, L. T. Tung, M. L. Huang, Pei-Ching Chang, Y. C. Chang and Wilman Tsai and has published in prestigious journals such as Applied Physics Letters, Journal of Crystal Growth and Solid-State Electronics.

In The Last Decade

H. C. Chiu

24 papers receiving 570 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. C. Chiu Taiwan 11 518 244 231 214 120 24 581
Rathnait Long United States 8 338 0.7× 151 0.6× 125 0.5× 130 0.6× 89 0.7× 11 376
Brianna S. Eller United States 8 331 0.6× 336 1.4× 278 1.2× 165 0.8× 83 0.7× 12 486
M. L. Huang Taiwan 13 719 1.4× 184 0.8× 194 0.8× 351 1.6× 219 1.8× 24 791
Ting-Hsiang Hung United States 10 394 0.8× 427 1.8× 342 1.5× 170 0.8× 74 0.6× 12 548
Quanbin Zhou China 12 224 0.4× 311 1.3× 157 0.7× 133 0.6× 79 0.7× 28 376
Dong Ji United States 13 548 1.1× 625 2.6× 295 1.3× 111 0.5× 91 0.8× 30 686
Toshiharu Kubo Japan 13 319 0.6× 319 1.3× 212 0.9× 148 0.7× 57 0.5× 27 423
H. Wenisch Germany 13 384 0.7× 105 0.4× 260 1.1× 553 2.6× 155 1.3× 28 644
Chihoko Mizue Japan 7 621 1.2× 674 2.8× 446 1.9× 141 0.7× 91 0.8× 11 740
Narumasa Soejima Japan 10 476 0.9× 402 1.6× 208 0.9× 85 0.4× 59 0.5× 20 550

Countries citing papers authored by H. C. Chiu

Since Specialization
Citations

This map shows the geographic impact of H. C. Chiu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. C. Chiu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. C. Chiu more than expected).

Fields of papers citing papers by H. C. Chiu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. C. Chiu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. C. Chiu. The network helps show where H. C. Chiu may publish in the future.

Co-authorship network of co-authors of H. C. Chiu

This figure shows the co-authorship network connecting the top 25 collaborators of H. C. Chiu. A scholar is included among the top collaborators of H. C. Chiu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. C. Chiu. H. C. Chiu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hwang, Jun-Dar, et al.. (2018). Mg x Zn1–x O/ZnO Quantum Well Photodetectors Fabricated by Radio-Frequency Magnetron Sputtering. IEEE Photonics Technology Letters. 30(17). 1583–1586. 3 indexed citations
2.
Chang, Pei-Ching, et al.. (2011). Achieving very high drain current of 1.23 mA/μm in a 1-μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET. Journal of Crystal Growth. 323(1). 518–521. 1 indexed citations
3.
Chiu, H. C., T. D. Lin, Wen-Hsin Chang, et al.. (2011). Publisher’s Note: “Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3 (Gd2O3) passivation” [Appl. Phys. Lett. 98, 062108 (2011)]. Applied Physics Letters. 98(10). 109901–109901. 3 indexed citations
4.
Lin, Chao‐An, H. C. Chiu, T. D. Lin, et al.. (2011). Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation. Applied Physics Letters. 98(6). 23 indexed citations
5.
Lin, Chao‐An, H. C. Chiu, Y. C. Chang, et al.. (2011). Low interfacial density of states around midgap in MBE-Ga2O3(Gd2O3)/In0.2Ga0.8As. Journal of Crystal Growth. 323(1). 99–102. 4 indexed citations
6.
7.
Lee, Wen‐Chung, T. D. Lin, Pei-Ching Chang, et al.. (2010). InGaAs and Ge MOSFETs with a common high κ gate dielectric. 1180–1183. 1 indexed citations
8.
Lin, T. D., Pei-Ching Chang, H. C. Chiu, et al.. (2010). dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3(Gd2O3) as gate dielectrics. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(3). C3H14–C3H17. 7 indexed citations
9.
10.
11.
Lin, T. D., H. C. Chiu, Pei-Ching Chang, et al.. (2009). InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3(Gd2O3) as a gate dielectric. ECS Transactions. 19(5). 351–360. 2 indexed citations
12.
13.
Chiu, H. C., L. T. Tung, Yizhe Chang, et al.. (2008). Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As. Applied Physics Letters. 93(20). 51 indexed citations
14.
Chang, Yen‐Chung, Wen-Hsin Chang, H. C. Chiu, et al.. (2008). Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric. Applied Physics Letters. 93(5). 55 indexed citations
15.
Lin, Chao‐An, et al.. (2008). Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics. Journal of Crystal Growth. 311(7). 1954–1957. 7 indexed citations
16.
Lin, T. D., H. C. Chiu, Pei-Ching Chang, et al.. (2008). High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics. Applied Physics Letters. 93(3). 103 indexed citations
17.
Chiu, H. C., Wen-Hsin Chang, J. Kwo, et al.. (2008). GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth. Journal of Crystal Growth. 311(7). 2084–2086. 15 indexed citations
18.
Chang, Y. C., Wen-Hsin Chang, H. C. Chiu, et al.. (2008). Inversion n-channel GaN MOSFETs with atomic-layer-deposited A1<inf>2</inf>O<inf>3</inf> as gate dielectrics. 81–82. 1 indexed citations
19.
Chang, Yen‐Chung, et al.. (2007). Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN. Applied Physics Letters. 90(23). 107 indexed citations
20.
Chang, Yen‐Chung, Y. J. Lee, T. D. Lin, et al.. (2007). MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN. Journal of Crystal Growth. 301-302. 390–393. 49 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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