Hsiang-Chun Wang

635 total citations
49 papers, 486 citations indexed

About

Hsiang-Chun Wang is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Hsiang-Chun Wang has authored 49 papers receiving a total of 486 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 39 papers in Condensed Matter Physics and 18 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Hsiang-Chun Wang's work include GaN-based semiconductor devices and materials (39 papers), Semiconductor materials and devices (28 papers) and Ga2O3 and related materials (18 papers). Hsiang-Chun Wang is often cited by papers focused on GaN-based semiconductor devices and materials (39 papers), Semiconductor materials and devices (28 papers) and Ga2O3 and related materials (18 papers). Hsiang-Chun Wang collaborates with scholars based in Taiwan and China. Hsiang-Chun Wang's co-authors include Hsien‐Chin Chiu, Hsuan‐Ling Kao, Feng-Tso Chien, Rong Xuan, Chih‐Wei Hu, Chia‐Hao Liu, Xinke Liu, Chih-Wei Yang, Bohong Li and Youming Lu and has published in prestigious journals such as Journal of Alloys and Compounds, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

Hsiang-Chun Wang

48 papers receiving 462 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hsiang-Chun Wang Taiwan 12 372 356 232 145 89 49 486
Hee‐Sung Kang South Korea 13 480 1.3× 430 1.2× 245 1.1× 108 0.7× 132 1.5× 37 585
Liang He China 12 207 0.6× 278 0.8× 209 0.9× 140 1.0× 44 0.5× 54 351
Dhrubes Biswas India 12 270 0.7× 244 0.7× 119 0.5× 125 0.9× 143 1.6× 63 396
Sameer Joglekar United States 9 387 1.0× 317 0.9× 176 0.8× 167 1.2× 61 0.7× 10 482
Shota Kaneki Japan 10 338 0.9× 355 1.0× 218 0.9× 128 0.9× 69 0.8× 15 450
Will Mecouch United States 10 313 0.8× 368 1.0× 273 1.2× 178 1.2× 89 1.0× 18 505
Wei-Hung Kuo Taiwan 10 253 0.7× 239 0.7× 135 0.6× 162 1.1× 72 0.8× 36 386
Jiacheng Lei Hong Kong 15 540 1.5× 550 1.5× 272 1.2× 137 0.9× 91 1.0× 22 667
Jong‐Bong Ha South Korea 12 596 1.6× 668 1.9× 418 1.8× 191 1.3× 122 1.4× 21 788
M. Kayambaki Greece 11 201 0.5× 196 0.6× 141 0.6× 116 0.8× 114 1.3× 47 346

Countries citing papers authored by Hsiang-Chun Wang

Since Specialization
Citations

This map shows the geographic impact of Hsiang-Chun Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hsiang-Chun Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hsiang-Chun Wang more than expected).

Fields of papers citing papers by Hsiang-Chun Wang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hsiang-Chun Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hsiang-Chun Wang. The network helps show where Hsiang-Chun Wang may publish in the future.

Co-authorship network of co-authors of Hsiang-Chun Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Hsiang-Chun Wang. A scholar is included among the top collaborators of Hsiang-Chun Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hsiang-Chun Wang. Hsiang-Chun Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chiu, Hsien‐Chin, et al.. (2024). Thermally stable radio frequency power and noise behaviors of AlGaN/GaN high electron mobility transistor without voltage-blocking buffer layer design. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 42(4). 1 indexed citations
2.
Wang, Hsiang-Chun, Taofei Pu, Xiaobo Li, et al.. (2022). High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate. IEEE Transactions on Electron Devices. 69(9). 4859–4863. 12 indexed citations
3.
Liu, Chia‐Hao, Hsiang-Chun Wang, Hsien‐Chin Chiu, et al.. (2022). Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor. Micromachines. 13(9). 1554–1554. 2 indexed citations
4.
5.
Wang, Hsiang-Chun, et al.. (2022). Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer. Materials. 15(10). 3503–3503. 1 indexed citations
6.
Chiu, Hsien‐Chin, et al.. (2021). Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates. Membranes. 11(11). 848–848. 6 indexed citations
7.
Huang, Yu‐Chun, Hsien‐Chin Chiu, Hsuan‐Ling Kao, et al.. (2021). High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate. Micromachines. 12(5). 509–509. 5 indexed citations
8.
Wang, Hsiang-Chun, Yuehua Hong, Zhangwei Chen, et al.. (2020). ZnO UV Photodetectors Modified by Ag Nanoparticles Using All-Inkjet-Printing. Nanoscale Research Letters. 15(1). 176–176. 61 indexed citations
9.
Chiu, Hsien‐Chin, et al.. (2020). Low-Mg out-diffusion of a normally off p-GaN gate high-electron-mobility transistor by using the laser activation technique. Materials Science in Semiconductor Processing. 117. 105166–105166. 11 indexed citations
10.
Chiu, Hsien‐Chin, et al.. (2019). The demonstration of recessed anodes AlGaN/GaN Schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques. Japanese Journal of Applied Physics. 58(7). 71002–71002. 5 indexed citations
11.
12.
Chiu, Hsien‐Chin, Bohong Li, Hsiang-Chun Wang, et al.. (2018). High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design. IEEE Journal of the Electron Devices Society. 6. 201–206. 40 indexed citations
13.
Li, Bohong, et al.. (2018). Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage. Materials Science in Semiconductor Processing. 90. 107–111. 21 indexed citations
14.
Liu, Xinke, et al.. (2018). 2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials. IEEE Journal of the Electron Devices Society. 6. 825–829. 11 indexed citations
15.
Wang, Hsiang-Chun, et al.. (2017). Effect of N2O/BCl3Cyclical Recess Etching Technique Used Prior to Anode Metal Deposition in AlGaN/GaN Schottky Barrier Diodes. ECS Journal of Solid State Science and Technology. 6(10). N177–N181. 2 indexed citations
16.
Chiu, Hsien‐Chin, et al.. (2016). Temperature dependency and reliability of through substrate via InAlN/GaN high electron mobility transistors as determined using low frequency noise measurement. Japanese Journal of Applied Physics. 55(5). 56502–56502. 2 indexed citations
17.
Lin, Wen‐Yen, et al.. (2015). Characterization of Nb-doped MgZnO films grown by a radio-frequency magnetron sputtering system. 18. 55–59. 1 indexed citations
18.
Chiu, Hsien‐Chin, et al.. (2014). Investigation of body bias effect in P-GaN Gate HEMT devices. Asia-Pacific Microwave Conference. 1 indexed citations
19.
Chiu, Hsien‐Chin, et al.. (2013). Low Surface Traps Induced Noise ZrZnO Thin-Film Transistor Using Field-Plate Metal Technology. Japanese Journal of Applied Physics. 52(9R). 94202–94202. 3 indexed citations
20.
Chiu, Hsien‐Chin, et al.. (2011). Low Frequency Noise Analysis of Top-Gate MgZnO Thin-Film Transistor with High-κ ZrO2 Gate Insulator. Electrochemical and Solid-State Letters. 14(9). H385–H385. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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