Dong Ji

861 total citations
30 papers, 686 citations indexed

About

Dong Ji is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Dong Ji has authored 30 papers receiving a total of 686 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Condensed Matter Physics, 27 papers in Electrical and Electronic Engineering and 12 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Dong Ji's work include GaN-based semiconductor devices and materials (28 papers), Silicon Carbide Semiconductor Technologies (17 papers) and Semiconductor materials and devices (13 papers). Dong Ji is often cited by papers focused on GaN-based semiconductor devices and materials (28 papers), Silicon Carbide Semiconductor Technologies (17 papers) and Semiconductor materials and devices (13 papers). Dong Ji collaborates with scholars based in United States, China and Italy. Dong Ji's co-authors include Srabanti Chowdhury, Anchal Agarwal, Wenwen Li, S. Keller, Silvia H. Chan, Matthew A. Laurent, Umesh K. Mishra, Chirag Gupta, Haoran Li and Burcu Ercan and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

Dong Ji

29 papers receiving 641 citations

Peers

Countries citing papers authored by Dong Ji

Since Specialization

Citations

This map shows the geographic impact of Dong Ji's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dong Ji with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dong Ji more than expected).

Fields of papers citing papers by Dong Ji

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dong Ji. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dong Ji. The network helps show where Dong Ji may publish in the future.

Co-authorship network of co-authors of Dong Ji

This figure shows the co-authorship network connecting the top 25 collaborators of Dong Ji. A scholar is included among the top collaborators of Dong Ji based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dong Ji. Dong Ji is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Vertical GaN Power Devices 2023 ·Wenwen Li, Dong Ji	1
2	The Doping Dependence of the Thermal Conductivity of Bulk Gallium Nitride Substrates 2020 ·Journal of Electronic Packaging ·Yiwen Song, James Spencer Lundh, Weijie Wang, Jacob H. Leach, (unknown), (unknown), (unknown), Dong Ji, Trent Borman, Kevin Ferri, Jon‐Paul Maria, Srabanti Chowdhury, Jae‐Hyun Ryou, Brian M. Foley, Sukwon Choi	12
3	Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m$\Omega\cdot$ cm²/1500 V GaN Diodes 2019 ·IEEE Electron Device Letters ·Dong Ji, Siwei Li, Burcu Ercan, Chenhao Ren, Srabanti Chowdhury	37
4	Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) 2019 ·Padua Research Archive (University of Padova) ·Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, S. Keller, Umesh K. Mishra, Srabanti Chowdhury	3
5	Experimental Determination of Velocity-Field Characteristic of Holes in GaN 2019 ·IEEE Electron Device Letters ·Dong Ji, Burcu Ercan, Srabanti Chowdhury	10
6	On the Progress Made in GaN Vertical Device Technology 2019 ·International Journal of High Speed Electronics and Systems ·Dong Ji, Srabanti Chowdhury	1
7	Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation 2018 ·IEEE Transactions on Electron Devices ·Dong Ji, Anchal Agarwal, Wenwen Li, S. Keller, Srabanti Chowdhury	35
8	Large-Area <italic>In-Situ</italic> Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) 2018 ·IEEE Electron Device Letters ·Dong Ji, Chirag Gupta, Anchal Agarwal, Silvia H. Chan, Cory Lund, Wenwen Li, S. Keller, Umesh K. Mishra, Srabanti Chowdhury	61
9	Improved Dynamic R_ON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch 2018 ·IEEE Electron Device Letters ·Dong Ji, Wenwen Li, Anchal Agarwal, Silvia H. Chan, (unknown), Davide Bisi, (unknown), Chirag Gupta, (unknown), Rakesh Lal, S. Keller, Umesh K. Mishra, Srabanti Chowdhury	35
10	A 620–690 GHz sub-harmonic mixer based on monolithic GaAs integrated schottky diodes 2017 ·Dong Ji, Bo Zhang, Lisen Zhang, (unknown), Yong Fan	1
11	Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process 2017 ·IEEE Journal of the Electron Devices Society ·Wenwen Li, Dong Ji, Ryo Tanaka, (unknown), Matthew A. Laurent, Srabanti Chowdhury	21
12	Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer 2017 ·IEEE Electron Device Letters ·(unknown), Anchal Agarwal, Elaheh Ahmadi, (unknown), Dong Ji, Matthew A. Laurent, S. Keller, Srabanti Chowdhury	41
13	Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices 2017 ·Dong Ji, Chirag Gupta, Silvia H. Chan, Anchal Agarwal, (unknown), S. Keller, Umesh K. Mishra, Srabanti Chowdhury	67
14	Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs 2017 ·IEEE Electron Device Letters ·Chirag Gupta, Dong Ji, Silvia H. Chan, Anchal Agarwal, W. Marshall Leach, S. Keller, Srabanti Chowdhury, Umesh K. Mishra	11
15	Dynamic Modeling and Power Loss Analysis of High-Frequency Power Switches Based on GaN CAVET 2016 ·IEEE Transactions on Electron Devices ·Dong Ji, Yuanzheng Yue, Jianyi Gao, Srabanti Chowdhury	35
16	Potential of GaN vertical JFETs presented through a comprehensive discussion of dynamic performance compared to SiC JFETs 2016 ·Dong Ji, Wenwen Li, Srabanti Chowdhury	4
17	Design of 1.2 kV Power Switches With Low <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{{\scriptscriptstyle ON}}}$ </tex-math></inline-formula> Using GaN-Based Vertical JFET 2015 ·IEEE Transactions on Electron Devices ·Dong Ji, Srabanti Chowdhury	55
18	A Reduced-Order Method for Coherent Transport Using Green’s Functions 2015 ·IEEE Transactions on Electron Devices ·Ulrich Hetmaniuk, Dong Ji, (unknown), (unknown)	3
19	Scattering induced by Al segregation in AlGaN/GaN heterostructures 2015 ·Applied Physics Letters ·Xiwen Liu, Dong Ji, Yanwu Lü	6
20	Influence of a two-dimensional electron gas on current-voltage characteristics of Al _0.3 Ga _0.7 N/GaN high electron mobility transistors 2012 ·Chinese Physics B ·Dong Ji, Bing Liu, Yanwu Lü, Miao Zou, (unknown)	7

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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