F. Lime

837 citations

56 papers · 604 indexed · h-index 15

Impact in

Electrical and Electronic Engineering top 10%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
- Thin-Film Transistor Technologies
Condensed Matter Physics
- GaN-based semiconductor devices and materials

Papers in ⓘ

Electrical and Electronic Engineering 55
- Advancements in Semiconductor Devices and Circuit Design 50
- Semiconductor materials and devices 48
- Silicon Carbide Semiconductor Technologies 22
- Integrated Circuits and Semiconductor Failure Analysis 17
- Ferroelectric and Negative Capacitance Devices 4
- Thin-Film Transistor Technologies 4
- Electrostatic Discharge in Electronics 3
Atomic and Molecular Physics, and Optics 4

Co-authors: Benjamı́n Iñı́guez (38 shared papers)Oana Moldovan (10 shared papers)G. Ghibaudo (9 shared papers)S. Cristoloveanu (7 shared papers)A. Cerdeira (10 shared papers)R. Ritzenthaler (10 shared papers)M. Estrada (9 shared papers)Ghader Darbandy (7 shared papers)
Journals: Solid-State Electronics (15 papers)IEEE Transactions on Electron Devices (8 papers)Microelectronic Engineering (3 papers)Semiconductor Science and Technology (2 papers)Journal of Applied Physics (2 papers)
Partner nations: Spain France Germany

In The Last Decade

F. Lime

53 papers receiving 583 citations

Peers

Countries citing papers authored by F. Lime

Since Specialization

Citations

This map shows the geographic impact of F. Lime's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Lime with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Lime more than expected).

Fields of papers citing papers by F. Lime

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Lime. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Lime. The network helps show where F. Lime may publish in the future.

Co-authors

The 25 scholars most cited alongside F. Lime, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with F. Lime Line = papers co-authored together F. Lime links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 56 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	75 nm damascene metal gate and high-k integration for advanced CMOS devices B. Guillaumot, X. Garros, F. Lime, K. Oshima, B. Tavel, J. A. Chroboczek, Pascal Le Masson, R. Truche, A.-M. Papon, F. Martín, J.F. Damlencourt, S. Maı̂trejean, M. Rivoire, C. Leroux, S. Cristoloveanu, G. Ghibaudo, J.L. Autran, T. Skotnicki, S. Deleonibus	2003	51
2	Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric Solid-State Electronics ·F. Lime, K. Oshima, M. Cassé, G. Ghibaudo, S. Cristoloveanu, B. Guillaumot, Hiroshi Iwai	2003	47
3	A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects IEEE Transactions on Electron Devices ·F. Lime, Benjamı́n Iñı́guez, Oana Moldovan	2008	45
4	Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs F. Andrieu, T. Ernst, F. Lime, F. Rochette, K. Romanjek, Sylvain Barraud, C. Ravit, F. Bœuf, M. Jurczak, M. Cassé, O. Weber, L. Brévard, G. Reimbold, G. Ghibaudo, S. Deleonibus	2005	37
5	A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part I: DC Characteristics IEEE Transactions on Electron Devices ·F. Lime, Oana Moldovan, Benjamı́n Iñı́guez	2014	34
6	Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides Solid-State Electronics ·F. Lime, C. Guiducci, R. Clerc, G. Ghibaudo, C. Leroux, T. Ernst	2003	32
7	A simple compact model for long-channel junctionless Double Gate MOSFETs Solid-State Electronics ·F. Lime, Ernesto Santana, Benjamı́n Iñı́guez	2012	29
8	3D analytical modelling of subthreshold characteristics in vertical Multiple-gate FinFET transistors Solid-State Electronics ·R. Ritzenthaler, F. Lime, Olivier Faynot, S. Cristoloveanu, Benjamı́n Iñı́guez	2011	26
9	Temperature enhancement of terahertz responsivity of plasma field effect transistors Journal of Applied Physics ·O. A. Klimenko, W. Knap, Benjamı́n Iñı́guez, Dominique Coquillat, Yu. A. Mityagin, F. Teppe, Nina Dyakonova, H. Videlier, Dmytro B. But, F. Lime, J. Marczewski, K. Kucharski	2012	24
10	A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part II: Total Charges and Intrinsic Capacitance Characteristics IEEE Transactions on Electron Devices ·Oana Moldovan, F. Lime, Benjamı́n Iñı́guez	2014	24
11	Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-kdielectrics for nanoscale double-gate MOSFETs Semiconductor Science and Technology ·Ghader Darbandy, R. Ritzenthaler, F. Lime, I. Garduño, M. Estrada, A. Cerdeira, Benjamı́n Iñı́guez	2011	21
12	Low temperature characterization of effective mobility in uniaxially and biaxially strained nMOSFETs Solid-State Electronics ·F. Lime, F. Andrieu, J. Derix, G. Ghibaudo, F. Bœuf, T. Skotnicki	2006	17
13	Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22nm node Solid-State Electronics ·Ghader Darbandy, R. Ritzenthaler, F. Lime, I. Garduño, M. Estrada, A. Cerdeira, Benjamı́n Iñı́guez	2010	17
14	Study of potential high-kdielectric for UTB SOI MOSFETs using analytical modeling of the gate tunneling leakage Semiconductor Science and Technology ·Ghader Darbandy, F. Lime, A. Cerdeira, M. Estrada, I. Garduño, Benjamı́n Iñı́guez	2011	17
15	New approach for the gate current source–drain partition modeling in advanced MOSFETs Solid-State Electronics ·K. Romanjek, F. Lime, G. Ghibaudo, Cédric Leroux	2003	17
16	3D analytical modelling of subthreshold characteristics in Pi-gate FinFET transistors R. Ritzenthaler, F. Lime, (unknown), O. Faynot, S. Cristoloveanu	2010	13
17	A Complete Charge-Based Capacitance Model for IGZO TFTs IEEE Electron Device Letters ·Oana Moldovan, A. Castro-Carranza, M. Estrada, A. Cerdeira, F. Lime, Benjamı́n Iñı́guez	2019	13
18	A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs Solid-State Electronics ·F. Lime, Fernando Avila Herrera, A. Cerdeira, Benjamı́n Iñı́guez	2017	11
19	A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation Solid-State Electronics ·F. Lime, R. Ritzenthaler, M. Ricoma, F. Mart́ınez, F. Pascal, E. Miranda, O. Faynot, Benjamı́n Iñı́guez	2011	10
20	Electrical studies of semiconductor–dielectric interfaces Journal of Materials Science Materials in Electronics ·M. Jamal Deen, Benjamı́n Iñı́guez, Ognian Marinov, F. Lime	2006	9

About F. Lime

F. Lime is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Astronomy and Astrophysics, having authored 56 papers that have together received 604 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (50 papers), Semiconductor materials and devices (48 papers), Silicon Carbide Semiconductor Technologies (22 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers), Ferroelectric and Negative Capacitance Devices (4 papers), Thin-Film Transistor Technologies (4 papers), Nanowire Synthesis and Applications (3 papers) and Electrostatic Discharge in Electronics (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (591 citations), Condensed Matter Physics (29 citations), Biomedical Engineering (81 citations), Atomic and Molecular Physics, and Optics (47 citations) and Bioengineering (5 citations). F. Lime has collaborated with scholars based in Spain, France and Germany. Frequent co-authors include Benjamı́n Iñı́guez, Oana Moldovan, G. Ghibaudo, S. Cristoloveanu, A. Cerdeira, R. Ritzenthaler, M. Estrada, Ghader Darbandy, B. Guillaumot and M. Cassé. Their work appears in journals such as Solid-State Electronics, IEEE Transactions on Electron Devices, Microelectronic Engineering, Semiconductor Science and Technology and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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