F. Lime

837 total citations
56 papers, 604 citations indexed

About

F. Lime is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, F. Lime has authored 56 papers receiving a total of 604 indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in F. Lime's work include Advancements in Semiconductor Devices and Circuit Design (50 papers), Semiconductor materials and devices (48 papers) and Silicon Carbide Semiconductor Technologies (22 papers). F. Lime is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (50 papers), Semiconductor materials and devices (48 papers) and Silicon Carbide Semiconductor Technologies (22 papers). F. Lime collaborates with scholars based in Spain, France and Germany. F. Lime's co-authors include Benjamı́n Iñı́guez, Oana Moldovan, G. Ghibaudo, S. Cristoloveanu, R. Ritzenthaler, A. Cerdeira, M. Estrada, B. Guillaumot, Ghader Darbandy and Alexander Kloes and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

F. Lime

53 papers receiving 583 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Lime Spain 15 591 81 47 32 29 56 604
Haijiang Ou United States 7 430 0.7× 83 1.0× 59 1.3× 22 0.7× 43 1.5× 13 451
M. Versleijen Netherlands 5 450 0.8× 42 0.5× 55 1.2× 30 0.9× 54 1.9× 12 463
R. Jammy United States 11 414 0.7× 78 1.0× 87 1.9× 104 3.3× 8 0.3× 32 439
Jeremy J. M. Law United States 8 278 0.5× 57 0.7× 102 2.2× 75 2.3× 34 1.2× 22 299
Yuan Taur United States 10 351 0.6× 26 0.3× 73 1.6× 74 2.3× 14 0.5× 13 362
Chien-I Kuo Taiwan 9 311 0.5× 54 0.7× 186 4.0× 50 1.6× 73 2.5× 36 347
J.-M. Sallese Switzerland 9 371 0.6× 79 1.0× 41 0.9× 41 1.3× 18 0.6× 22 406
T. Sonoda Japan 10 296 0.5× 28 0.3× 208 4.4× 40 1.3× 45 1.6× 43 318
E. Simoen Belgium 12 370 0.6× 42 0.5× 63 1.3× 35 1.1× 17 0.6× 44 382
A. Sibaja-Hernandez Belgium 11 400 0.7× 53 0.7× 95 2.0× 38 1.2× 133 4.6× 47 437

Countries citing papers authored by F. Lime

Since Specialization
Citations

This map shows the geographic impact of F. Lime's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Lime with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Lime more than expected).

Fields of papers citing papers by F. Lime

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Lime. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Lime. The network helps show where F. Lime may publish in the future.

Co-authorship network of co-authors of F. Lime

This figure shows the co-authorship network connecting the top 25 collaborators of F. Lime. A scholar is included among the top collaborators of F. Lime based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Lime. F. Lime is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lime, F., Benjamı́n Iñı́guez, & Alexander Kloes. (2024). A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling. Journal of Applied Physics. 135(4).
2.
Iñı́guez, Benjamı́n, et al.. (2023). Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors. IEEE Transactions on Electron Devices. 71(1). 884–889. 2 indexed citations
3.
Iñı́guez, Benjamı́n, et al.. (2022). Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs. IEEE Transactions on Electron Devices. 69(3). 1588–1595. 8 indexed citations
4.
Iñı́guez, Benjamı́n, et al.. (2019). Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact Model. 202–205. 1 indexed citations
5.
Graef, Michael, et al.. (2017). Compact modeling of intrinsic capacitances in Double-Gate Tunnel-FETs. 140–143. 4 indexed citations
6.
Graef, Michael, et al.. (2016). Rapid NEGF-based calculation of ballistic current in ultra-short DG MOSFETs for circuit simulation. 7. 2 indexed citations
7.
8.
Mart́ınez, F., M. Valenza, R. Ritzenthaler, et al.. (2013). Modeling of low frequency noise in FD SOI MOSFETs. Solid-State Electronics. 90. 116–120. 2 indexed citations
9.
Iñı́guez, Benjamı́n, et al.. (2012). Simulation and modeling of nanoscale multiple-gate SOI MOSFETs. International Conference Mixed Design of Integrated Circuits and Systems. 25–29. 1 indexed citations
10.
Darbandy, Ghader, et al.. (2012). Gate leakage current partitioning in nanoscale double gate MOSFETs, using compact analytical model. Solid-State Electronics. 75. 22–27. 3 indexed citations
11.
Mart́ınez, F., M. Bawedin, M. Valenza, et al.. (2011). New numerical low frequency noise model for front and buried oxide trap density characterization in FDSOI MOSFETs. Microelectronic Engineering. 88(7). 1286–1290. 1 indexed citations
12.
Darbandy, Ghader, et al.. (2011). Study of potential high-kdielectric for UTB SOI MOSFETs using analytical modeling of the gate tunneling leakage. Semiconductor Science and Technology. 26(11). 115002–115002. 17 indexed citations
13.
Darbandy, Ghader, R. Ritzenthaler, F. Lime, et al.. (2010). Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22nm node. Solid-State Electronics. 54(10). 1083–1087. 17 indexed citations
14.
Ritzenthaler, R., et al.. (2009). 2D compact modeling of the threshold voltage in triple- and Pi-gate transistors. 30. 1–2. 1 indexed citations
15.
Lime, F., Benjamı́n Iñı́guez, & Oana Moldovan. (2008). A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects. IEEE Transactions on Electron Devices. 55(6). 1441–1448. 45 indexed citations
16.
Lime, F., et al.. (2006). Low temperature characterization of effective mobility in uniaxially and biaxially strained nMOSFETs. Solid-State Electronics. 50(4). 644–649. 17 indexed citations
17.
Deen, M. Jamal, Benjamı́n Iñı́guez, Ognian Marinov, & F. Lime. (2006). Electrical studies of semiconductor–dielectric interfaces. Journal of Materials Science Materials in Electronics. 17(9). 663–683. 9 indexed citations
18.
Lime, F.. (2003). Charge trapping in SiO2/HfO2/TiN gate stack. Microelectronics Reliability. 43(9-11). 1445–1448. 6 indexed citations
19.
Lime, F., et al.. (2001). Stress induced leakage current at low field in ultra thin oxides. Microelectronics Reliability. 41(9-10). 1421–1425. 5 indexed citations
20.
Lime, F., R. Clerc, G. Ghibaudo, G. Pananakakis, & G. Guégan. (2001). Impact of gate tunneling leakage on the operation of NMOS transistors with ultra-thin gate oxides. Microelectronic Engineering. 59(1-4). 119–125. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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