Donghyun Jin

429 total citations
6 papers, 298 citations indexed

About

Donghyun Jin is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Donghyun Jin has authored 6 papers receiving a total of 298 indexed citations (citations by other indexed papers that have themselves been cited), including 6 papers in Electrical and Electronic Engineering, 4 papers in Condensed Matter Physics and 2 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Donghyun Jin's work include Semiconductor materials and devices (5 papers), GaN-based semiconductor devices and materials (4 papers) and Silicon Carbide Semiconductor Technologies (3 papers). Donghyun Jin is often cited by papers focused on Semiconductor materials and devices (5 papers), GaN-based semiconductor devices and materials (4 papers) and Silicon Carbide Semiconductor Technologies (3 papers). Donghyun Jin collaborates with scholars based in United States. Donghyun Jin's co-authors include Jesús A. del Alamo, A.W. Hanson, Timothy Boles, Ling Xia, Tae‐Woo Kim, Daehyun Kim, D.A. Antoniadis and Dae-Hyun Kim and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Microelectronics Reliability.

In The Last Decade

Donghyun Jin

6 papers receiving 285 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Donghyun Jin United States	6	257	238	86	57	41	6	298
N. Tipirneni United States	8	312 1.2×	312 1.3×	122 1.4×	46 0.8×	46 1.1×	16	365
Sung‐Jae Chang South Korea	10	236 0.9×	164 0.7×	88 1.0×	49 0.9×	47 1.1×	47	282
A. Pantellini Italy	8	298 1.2×	307 1.3×	76 0.9×	95 1.7×	46 1.1×	30	345
D. Mahaveer Sathaiya Taiwan	7	236 0.9×	221 0.9×	80 0.9×	96 1.7×	51 1.2×	13	296
Yasunori Tateno Japan	12	292 1.1×	244 1.0×	58 0.7×	83 1.5×	55 1.3×	28	338
Hideyuki Okita Japan	6	328 1.3×	383 1.6×	150 1.7×	56 1.0×	55 1.3×	9	401
Loizos Efthymiou United Kingdom	8	284 1.1×	322 1.4×	134 1.6×	50 0.9×	61 1.5×	22	356
Shuichi Yagi Japan	8	206 0.8×	241 1.0×	121 1.4×	47 0.8×	55 1.3×	31	271
Yi-Wei Lian Taiwan	8	275 1.1×	319 1.3×	169 2.0×	73 1.3×	40 1.0×	10	346
Naveen Karumuri India	6	327 1.3×	369 1.6×	163 1.9×	90 1.6×	66 1.6×	11	406

Countries citing papers authored by Donghyun Jin

Since Specialization

Citations

This map shows the geographic impact of Donghyun Jin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Donghyun Jin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Donghyun Jin more than expected).

Fields of papers citing papers by Donghyun Jin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Donghyun Jin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Donghyun Jin. The network helps show where Donghyun Jin may publish in the future.

Co-authorship network of co-authors of Donghyun Jin

This figure shows the co-authorship network connecting the top 25 collaborators of Donghyun Jin. A scholar is included among the top collaborators of Donghyun Jin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Donghyun Jin. Donghyun Jin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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6 of 6 papers shown

1.

Jin, Donghyun & Jesús A. del Alamo. (2013). Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors. IEEE Transactions on Electron Devices. 60(10). 3190–3196. 104 indexed citations

2.

Xia, Ling, A.W. Hanson, Timothy Boles, & Donghyun Jin. (2013). On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate. Applied Physics Letters. 102(11). 44 indexed citations

3.

Jin, Donghyun & Jesús A. del Alamo. (2012). Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs. Microelectronics Reliability. 52(12). 2875–2879. 23 indexed citations

4.

Jin, Donghyun & Jesús A. del Alamo. (2012). Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs. 333–336. 81 indexed citations

5.

Alamo, Jesús A. del, Dae-Hyun Kim, Tae‐Woo Kim, Donghyun Jin, & D.A. Antoniadis. (2011). III–V CMOS: What have we learned from HEMTs?. DSpace@MIT (Massachusetts Institute of Technology). 1–4. 6 indexed citations

6.

Jin, Donghyun, Daehyun Kim, Tae‐Woo Kim, & Jesús A. del Alamo. (2009). Quantum capacitance in scaled down III–V FETs. 1–4. 40 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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