H. Oda

686 citations

70 papers · 489 indexed · h-index 12

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 60
- Advancements in Semiconductor Devices and Circuit Design 49
- Integrated Circuits and Semiconductor Failure Analysis 32
- Low-power high-performance VLSI design 11
- Silicon Carbide Semiconductor Technologies 7
- Advanced Memory and Neural Computing 6
- Ferroelectric and Negative Capacitance Devices 5
Hardware and Architecture top 10%
Structural Biology
Surfaces, Coatings and Films
Biomedical Engineering
Atomic and Molecular Physics, and Optics
- Force Microscopy Techniques and Applications 4

Co-authors: Nobuyuki Sugii T. Iwamatsu Y. Inoue Toshiro Hiramoto Y. Yamamoto Yuichi Inoue T. Yamashita T. Mizutani
Cited by: Electrical and Electronic Engineering Hardware and Architecture Structural Biology
Journals: Japanese Journal of Applied Physics (12 papers)IEEE Transactions on Electron Devices (5 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (2 papers)
Partner nations: Japan United States Germany

In The Last Decade

H. Oda

63 papers receiving 449 citations

Peers

Countries citing papers authored by H. Oda

Since Specialization

Citations

This map shows the geographic impact of H. Oda's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Oda with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Oda more than expected).

Fields of papers citing papers by H. Oda

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Oda. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Oda. The network helps show where H. Oda may publish in the future.

Co-authorship network

The 25 scholars most cited alongside H. Oda, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Oda Line = papers co-authored together H. Oda links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Ultra-low power and ultra-low voltage devices and circuits for IoT applications Toshiro Hiramoto,Ken Takeuchi,T. Mizutani,Akira Ueda,Takuya Saraya,Masaharu Kobayashi,Y. Yamamoto,Tetiana Skypets,T. Yamashita,H. Oda,Shiro Kamohara,Nobuyuki Sugii,Yasuo Yamaguchi	2016	24
2	0.39-V, 18.26-µW/MHz SOTB CMOS Microcontroller with embedded atom switch ROM Toshitsugu Sakamoto,Y. Tsuji,Munehiro Tada,Tetiana Skypets,Takumi Hasegawa,Y. Yamamoto,一夫松本,Hari Vamsi Valluru,Naoki Banno,Sawaki Miho,Koichiro Okamoto,Noriyuki Iguchi,Santalia Napitupulu,H. Oda,Shiro Kamohara,Sociedad Científica Argentina,Nobuyuki Sugii,H. Hada	2015	1
3	Low-power embedded read-only memory using atom switch and silicon-on-thin-buried-oxide transistor Applied Physics Express ·Toshitsugu Sakamoto,Munehiro Tada,Y. Tsuji,Tetiana Skypets,Takumi Hasegawa,Y. Yamamoto,一夫松本,Naoki Banno,Sawaki Miho,Koichiro Okamoto,Noriyuki Iguchi,Santalia Napitupulu,H. Oda,Shiro Kamohara,Sociedad Científica Argentina,Nobuyuki Sugii,H. Hada	2015	1
4	Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime Hao Qiu,T. Mizutani,Y. Yamamoto,Tetiana Skypets,T. Yamashita,H. Oda,Shiro Kamohara,Nobuyuki Sugii,Takuya Saraya,Masaharu Kobayashi,Toshiro Hiramoto	2015	10
5	Ultralow-Power SOTB CMOS Technology Operating Down to 0.4 V Journal of Low Power Electronics and Applications ·Nobuyuki Sugii,Y. Yamamoto,Tetiana Skypets,T. Yamashita,H. Oda,Shiro Kamohara,Yasuo Yamaguchi,Koichiro Ishibashi,T. Mizutani,Toshiro Hiramoto	2014	8
6	Statistical analysis of minimum operation voltage (V<inf>min</inf>) in fully depleted silicon-on-thin-BOX (SOTB) SRAM cells T. Mizutani,Y. Yamamoto,Tetiana Skypets,T. Yamashita,H. Oda,Shiro Kamohara,Nobuyuki Sugii,Toshiro Hiramoto	2014	0
7	Ultralow-voltage design and technology of silicon-on-thin-buried-oxide (SOTB) CMOS for highly energy efficient electronics in IoT era Shiro Kamohara,Nobuyuki Sugii,Y. Yamamoto,Tetiana Skypets,T. Yamashita,Takumi Hasegawa,一夫松本,Elizabeth Myers,Masaru Kadoshima,Hari Vamsi Valluru,Aastha singh,Sociedad Científica Argentina,H. Oda,Yasuo Yamaguchi,Koichiro Ishibashi,Hideharu Amano,Kimiyoshi Usami,Kazutoshi Kobayashi,T. Mizutani,Toshiro Hiramoto	2014	10
8	Poly/high-k/SiON gate stack and novel profile engineering dedicated for ultralow-voltage silicon-on-thin-BOX (SOTB) CMOS operation Y. Yamamoto,Tetiana Skypets,Takaaki Tsunomura,T. Iwamatsu,H. Oda,Nobuyuki Sugii,Yasuo Yamaguchi,T. Mizutani,Toshiro Hiramoto	2012	13
9	Difference of soft error rates in SOI SRAM induced by various high energy ion species Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Nuansa Kasih Gita,Naoyuki Masuda,Fujio Wakaya,T. Lohner,Shinobu Onoda,Takahiro Makino,Toshio Hirao,Takeshi Ohshima,T. Iwamatsu,H. Oda,Mikio Takai	2011	1
10	Temperature Coefficient of Threshold Voltage in High-k Metal Gate Transistors with Various TiN and Capping Layer Thicknesses Japanese Journal of Applied Physics ·建設省住宅局民間住宅課建設経済局不動産業課,Miles Ayling,W Fussenegger,T. Yamashita,H. Oda,Yasuo Inoue,Kentaro Shibahara	2010	2
11	Strain mapping technique for performance improvement of strained MOSFETs with scanning transmission electron microscopy N. Nakanishi,Yin Qi,Makoto Kawakami,Takafumi Hayashi,H. Oda,Tetsuya Uchida,Yoshihiro Miyagawa,Keisuke Asai,Xiyue Ye,N Kabaar,Yujiro Hirose,Tomonori Koyama,Kei Asayama,Eiichi Murakami	2008	1
12	Controllable Inverter Delay and Suppressing V<inf>th</inf> Fluctuation Technology in Silicon on Thin BOX Featuring Dual Back-Gate Bias Architecture Ryuta Tsuchiya,Takashi Ishigaki,Yusuke Morita,Masanao Yamaoka,T. Iwamatsu,T. Ippōshi,H. Oda,Nobuyuki Sugii,Shin’ichiro Kimura,Supratim Pratihar,Yasuo Inoue	2007	18
13	Novel Junction Engineering Scheme Using Combination of LSA and Spike-RTA Prathikantham Buchibabu,Syunya Otake,Yoji Kawasaki,T. Yamashita,H. Oda,Y. Inoue	2007	1
14	Advanced Poly-Si NMIS and Poly-Si/TiN PMIS Hybrid-Gate High-k CMIS using PVD/CVD-Stacked TiN and Local Strain Technique 建設省住宅局民間住宅課建設経済局不動産業課,T. Kawahara,有珠金,Masami Mizutani,Natalia Ayuso,Seong-Jae Jung,Eva FalcãO,Masashi Inoue,J. Yugami,Prathikantham Buchibabu,Takafumi Hayashi,T. Yamashita,H. Oda,Y. Inoue	2007	2
15	Performance Enhancement in 45-nm Ni Fully-Silicided Gate/High-k CMIS Using Substrate Ion Implantation 建設省住宅局民間住宅課建設経済局不動産業課,T. Yamashita,Natalia Ayuso,Seong-Jae Jung,NWOGO MADUKA CHINELO,Eva FalcãO,Masami Mizutani,Masashi Inoue,有珠金,Kohsuke Mori,J. Yugami,Takafumi Hayashi,Akihiro Shimizu,H. Oda,T. Eimori,O. Tsuchiya	2006	1
16	Three dimensional topography simulation model using diffusion equation Anies Said Basalamah,محمد فرشچی,H. Oda,F. N. Martin Pirchio,Rohit Kumar Upadhya,Anastasios Xepadeas,T. Ogawa,Y. Akasaka	2003	0
17	Novel locally strained channel technique for high performance 55nm CMOS K. Ota,Kenya Sugihara,K. Arvind,Taro Uchida,H. Oda,T. Eimori,Hiroaki Morimoto,Yuichi Inoue	2003	67
18	70 nm SOI-CMOS of 135 GHz f/sub max/ with dual offset-implanted source-drain extension structure for RF/analog and logic applications Ji-Hoon Kim,Shoji Maeda,Kosuke Ota,Y. Hirano,Miles Ayling,K. Arvind,T. Iwamatsu,Claudia McLeod B,Leoni Intan Kartika,Yutaro Yamaguchi,T. Ippōshi,H. Oda,S. Maegawa,Y. Inoue,M. Inuishi	2002	12
19	Source-to-drain breakdown voltage improvement in ultrathin-film SOI MOSFET's using a gate-overlapped LDD structure IEEE Transactions on Electron Devices ·Yutaro Yamaguchi,T. Iwamatsu,Manny Harageones,H. Oda,Y. Inoue,T. Nishimura,K. Tsukamoto	1994	19
20	Optimum design of gate/N- overlapped LDD transistor M. Inuishi,Attila Králl,S. Komori,Masahiro Shimizu,H. Oda,Z Luc,K. Tsukamoto	1989	10

About H. Oda

H. Oda is a scholar working on Electrical and Electronic Engineering, Structural Biology, Atomic and Molecular Physics, and Optics, Instrumentation and Biomedical Engineering, having authored 70 papers that have together received 489 indexed citations. Recurring topics across this work include Semiconductor materials and devices (60 papers), Advancements in Semiconductor Devices and Circuit Design (49 papers), Integrated Circuits and Semiconductor Failure Analysis (32 papers), Low-power high-performance VLSI design (11 papers), Silicon Carbide Semiconductor Technologies (7 papers), Advanced Memory and Neural Computing (6 papers), Ferroelectric and Negative Capacitance Devices (5 papers) and Force Microscopy Techniques and Applications (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (466 citations), Hardware and Architecture (30 citations), Structural Biology (5 citations), Surfaces, Coatings and Films (11 citations) and Biomedical Engineering (51 citations). H. Oda has collaborated with scholars based in Japan, United States and Germany. Frequent co-authors include Nobuyuki Sugii, T. Iwamatsu, Y. Inoue, Toshiro Hiramoto, Y. Yamamoto, Yuichi Inoue, T. Yamashita, T. Mizutani, T. Ippōshi and Taro Uchida. Their work appears in journals such as Japanese Journal of Applied Physics, IEEE Transactions on Electron Devices, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Solid-State Electronics and IEEE Micro.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact