T. Ippōshi

978 total citations
90 papers, 745 citations indexed

About

T. Ippōshi is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T. Ippōshi has authored 90 papers receiving a total of 745 indexed citations (citations by other indexed papers that have themselves been cited), including 84 papers in Electrical and Electronic Engineering, 10 papers in Biomedical Engineering and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T. Ippōshi's work include Semiconductor materials and devices (59 papers), Advancements in Semiconductor Devices and Circuit Design (52 papers) and Integrated Circuits and Semiconductor Failure Analysis (21 papers). T. Ippōshi is often cited by papers focused on Semiconductor materials and devices (59 papers), Advancements in Semiconductor Devices and Circuit Design (52 papers) and Integrated Circuits and Semiconductor Failure Analysis (21 papers). T. Ippōshi collaborates with scholars based in Japan, United States and Germany. T. Ippōshi's co-authors include S. Maegawa, K. Takita, T. Iwamatsu, S. Maeda, Y. Inoue, Ryuta Tsuchiya, S. Kimura, Kohzoh Masuda, T. Nishimura and Masanao Yamaoka and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

T. Ippōshi

82 papers receiving 700 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Ippōshi Japan 16 656 81 70 65 63 90 745
E.P. Vandamme Belgium 12 762 1.2× 66 0.8× 62 0.9× 73 1.1× 22 0.3× 40 791
D. Greenberg United States 20 1.0k 1.5× 107 1.3× 83 1.2× 229 3.5× 40 0.6× 54 1.1k
K.W. Terrill United States 11 1.5k 2.2× 34 0.4× 132 1.9× 73 1.1× 42 0.7× 22 1.5k
L. Henry United States 13 586 0.9× 51 0.6× 42 0.6× 211 3.2× 25 0.4× 62 678
H.-J. Wann United States 10 863 1.3× 93 1.1× 22 0.3× 105 1.6× 39 0.6× 18 885
Ping-Keung Ko United States 10 1.9k 2.9× 79 1.0× 41 0.6× 102 1.6× 44 0.7× 13 2.0k
T. Horiuchi Japan 12 764 1.2× 66 0.8× 9 0.1× 79 1.2× 70 1.1× 51 820
Y. Tsuchiya Japan 10 296 0.5× 81 1.0× 38 0.5× 90 1.4× 37 0.6× 31 376
M. Racanelli United States 16 772 1.2× 107 1.3× 20 0.3× 135 2.1× 12 0.2× 92 794
F. Arnaud France 14 801 1.2× 101 1.2× 11 0.2× 111 1.7× 34 0.5× 63 838

Countries citing papers authored by T. Ippōshi

Since Specialization
Citations

This map shows the geographic impact of T. Ippōshi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Ippōshi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Ippōshi more than expected).

Fields of papers citing papers by T. Ippōshi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Ippōshi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Ippōshi. The network helps show where T. Ippōshi may publish in the future.

Co-authorship network of co-authors of T. Ippōshi

This figure shows the co-authorship network connecting the top 25 collaborators of T. Ippōshi. A scholar is included among the top collaborators of T. Ippōshi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Ippōshi. T. Ippōshi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mori, Takahiro, et al.. (2019). Experimental Study on the Effect of Recessed Gates in Drain STI Regions of nLDMOSFETs. 375–378. 4 indexed citations
2.
Iwamatsu, T., et al.. (2008). Delayed-ABC SOI for crosstalk noise repair. IEICE Electronics Express. 5(9). 354–360. 2 indexed citations
3.
Tsuchiya, Ryuta, Takashi Ishigaki, Yusuke Morita, et al.. (2007). Controllable Inverter Delay and Suppressing V<inf>th</inf> Fluctuation Technology in Silicon on Thin BOX Featuring Dual Back-Gate Bias Architecture. 475–478. 18 indexed citations
4.
Ishigaki, Takashi, Yukinori Morita, Nobuyuki Sugii, et al.. (2007). Wide-Range Vth Controllable SOTB (Silicon on Thin BOX) Integrated with Bulk CMOS Featuring Fully Silicided NiSi Gate Electrode. 1 indexed citations
5.
Numa, Masahiro, et al.. (2007). Look-Ahead Dynamic Threshold Voltage Control Scheme for Improving Write Margin of SOI-7T-SRAM. IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences. E90-A(12). 2691–2694. 1 indexed citations
6.
7.
Hirano, Y., T. Ippōshi, Hung Dang, et al.. (2004). Impact of actively body-bias controlled (ABC) SOI SRAM by using direct body contact technology for low-voltage application. 2.4.1–2.4.4. 16 indexed citations
8.
Hosokawa, Takashi, Michele Dei, Akio Nishida, et al.. (2004). Soft error free, low power and low cost superSRAM with 0.98 /spl mu/m/sup 2/ cell by utilizing existing 0.15 /spl mu/m-DRAM process. 232–233. 5 indexed citations
9.
Sato, H., Koji Nii, Kōji Yoshida, et al.. (2003). A 400MHz 183mW microcontroller in body-tied SOI technology. 1. 110–481. 1 indexed citations
10.
Iwamatsu, T., et al.. (2003). Surface defects on SOI wafers and their influence on device characteristics. Electronics and Communications in Japan (Part II Electronics). 86(7). 64–72. 2 indexed citations
11.
Yamaguchi, Yutaro, Y. Inoue, T. Ippōshi, T. Nishimura, & Y. Akasaka. (2003). Improved characteristics of MOSFETs on ultra thin SIMOX. 825–828.
12.
Maeda, S., Kazuya Yamamoto, Takuji Matsumoto, et al.. (2001). Feasibility of 0.18 μm SOI CMOS technology using hybrid trench isolation with high resistivity substrate for embedded RF/analog applications. IEEE Transactions on Electron Devices. 48(9). 2065–2073. 13 indexed citations
13.
Iwamatsu, T., et al.. (1997). Suppression of Parasitic MOSFETs at LOCOS Edge Region in Partially Depleted SOI MOSFETs. Japanese Journal of Applied Physics. 36(3S). 1631–1631. 3 indexed citations
14.
Ippōshi, T., et al.. (1994). SOI Type Pressure Sensor for High Temperature Pressure Measurement. SAE technical papers on CD-ROM/SAE technical paper series. 1. 7 indexed citations
15.
Maeda, S., S. Maegawa, T. Ippōshi, et al.. (1994). Mechanism of negative-bias temperature instability in polycrystalline-silicon thin film transistors. Journal of Applied Physics. 76(12). 8160–8166. 22 indexed citations
16.
Sugahara, Kengo, T. Ippōshi, Y. Inoue, T. Nishimura, & Y. Akasaka. (1989). Crystal-Axis-Rotation of Laser-Recrystallized Silicon on Insulator. MRS Proceedings. 164.
17.
Ippōshi, T., et al.. (1988). Hg content and thermal stability of the anodic sulfide films on Hg1−xCdxTe investigated by 30–40-MeV O5+ ion backscattering. Journal of Applied Physics. 63(1). 132–135. 13 indexed citations
18.
Takita, K., T. Ippōshi, & Kohzoh Masuda. (1987). Superconducting Upper Critical Field Hc2 of High-Tc Y-Ba-Cu-O Compound System. Japanese Journal of Applied Physics. 26(5A). L668–L668. 15 indexed citations
19.
Takita, K., T. Ippōshi, & Kohzoh Masuda. (1987). Magnetophonon resonance trapping of electron with emission of multi-phonon and magneto-Auger-recombination oscillation in n−Hg1-xCdxTe. Solid State Communications. 61(12). 817–820. 3 indexed citations
20.
Takita, K., T. Ippōshi, & K. Masuda. (1984). Magnetophonon resonance recombination of hot carriers with emission of two TA-phonons in LPE-HgTe. Solid State Communications. 52(12). 1021–1024. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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