Geng Han

568 total citations
24 papers, 288 citations indexed

About

Geng Han is a scholar working on Electrical and Electronic Engineering, Surfaces, Coatings and Films and Industrial and Manufacturing Engineering. According to data from OpenAlex, Geng Han has authored 24 papers receiving a total of 288 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 9 papers in Surfaces, Coatings and Films and 5 papers in Industrial and Manufacturing Engineering. Recurrent topics in Geng Han's work include Advancements in Photolithography Techniques (18 papers), Electron and X-Ray Spectroscopy Techniques (9 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). Geng Han is often cited by papers focused on Advancements in Photolithography Techniques (18 papers), Electron and X-Ray Spectroscopy Techniques (9 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). Geng Han collaborates with scholars based in United States, Australia and Hungary. Geng Han's co-authors include F. Cerrina, Yuling Ma, Katerina Moloni, Scott Mansfield, Jaeseok Kim, Lars W. Liebmann, Sungho Kang, Sung Oh Hwang, R. Tsai and Juan R. Maldonado and has published in prestigious journals such as Journal of Applied Crystallography, RSC Advances and IEEE Signal Processing Letters.

In The Last Decade

Geng Han

23 papers receiving 265 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Geng Han United States 11 228 96 91 24 24 24 288
Jeongho Yeo South Korea 9 253 1.1× 65 0.7× 47 0.5× 6 0.3× 3 0.1× 44 290
Yoshikazu Yamaguchi Japan 9 130 0.6× 82 0.9× 26 0.3× 113 4.7× 9 0.4× 47 295
A. Shibayama Japan 10 288 1.3× 73 0.8× 44 0.5× 45 1.9× 83 3.5× 34 358
Jongwook Kye United States 11 368 1.6× 130 1.4× 35 0.4× 59 2.5× 56 395
Hucheng Xie China 11 467 2.0× 40 0.4× 33 0.4× 4 0.2× 13 0.5× 16 551
Cyrus Tabery United States 11 668 2.9× 119 1.2× 63 0.7× 32 1.3× 50 704
Gregory McIntyre United States 10 247 1.1× 79 0.8× 131 1.4× 16 0.7× 39 275
Kyupil Lee South Korea 8 207 0.9× 37 0.4× 50 0.5× 19 0.8× 20 287
Germain Fenger United States 11 309 1.4× 83 0.9× 75 0.8× 7 0.3× 73 352
M.G. Rosenfield United States 9 255 1.1× 26 0.3× 87 1.0× 3 0.1× 89 3.7× 29 303

Countries citing papers authored by Geng Han

Since Specialization
Citations

This map shows the geographic impact of Geng Han's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Geng Han with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Geng Han more than expected).

Fields of papers citing papers by Geng Han

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Geng Han. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Geng Han. The network helps show where Geng Han may publish in the future.

Co-authorship network of co-authors of Geng Han

This figure shows the co-authorship network connecting the top 25 collaborators of Geng Han. A scholar is included among the top collaborators of Geng Han based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Geng Han. Geng Han is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Han, Geng, et al.. (2022). Harnessing magnetic fields for rare-earth complex crystallization–separations in aqueous solutions. RSC Advances. 12(43). 27895–27898. 12 indexed citations
2.
Liu, Yang, Yukun Liu, Yan Fan, & Geng Han. (2018). Likelihood ratio confidence interval for the abundance under binomial detectability models. Metrika. 81(5). 549–568. 1 indexed citations
3.
Liebmann, Lars W., et al.. (2018). Pre-PDK block-level PPAC assessment of technology options for sub-7nm high-performance logic. 7–7. 2 indexed citations
4.
Chen, Zheng, et al.. (2018). Line edge roughness reduction for 7nm metals. 7–7. 1 indexed citations
5.
Brunner, Timothy A., et al.. (2017). Vote-taking for EUV lithography: a radical approach to mitigate mask defects. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 10143. 1014313–1014313. 1 indexed citations
6.
Liebmann, Lars W., et al.. (2014). Demonstrating production quality multiple exposure patterning aware routing for the 10NM node. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9053. 905309–905309. 15 indexed citations
7.
Ahsan, Ishtiaq, Geng Han, J. G. Bolton, et al.. (2010). Use of print-simulations in accelerated yield learning for 22nm BEOL technology. 284–287.
8.
Han, Geng, et al.. (2007). Statistical optimization of sampling plan and its relation to OPC model accuracy. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6518. 651808–651808. 4 indexed citations
9.
Mansfield, Scott, et al.. (2007). Lithography simulation in DfM: achievable accuracy versus requirements. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6521. 652106–652106. 4 indexed citations
10.
Lai, Kafai, Alan E. Rosenbluth, Geng Han, et al.. (2007). Modeling polarization for hyper-NA lithography tools and masks. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6520. 65200D–65200D. 11 indexed citations
11.
Mansfield, Scott, et al.. (2006). Through-process modeling in a DfM environment. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6156. 615603–615603. 5 indexed citations
12.
Han, Geng, Scott Mansfield, & Azalia A. Krasnoperova. (2006). Integration of the retical systematic CD errors into an OPC modeling and correction. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6154. 61543I–61543I. 3 indexed citations
13.
Liebmann, Lars W., et al.. (2006). Reducing DfM to practice: the lithography manufacturability assessor. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6156. 61560K–61560K. 27 indexed citations
14.
Talbi, Mohammed, Daniel Fischer, Geng Han, et al.. (2006). Model-based calculation of weighting in OPC model calibration. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6152. 615202–615202. 5 indexed citations
15.
Hwang, Sung Oh, Geng Han, Sungho Kang, & Jaeseok Kim. (2004). New distributed arithmetic algorithm for low-power FIR filter implementation. IEEE Signal Processing Letters. 11(5). 463–466. 31 indexed citations
16.
Han, Geng, et al.. (2003). Stochastic modeling of high energy lithographies. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(6). 3166–3171. 7 indexed citations
17.
Han, Geng, et al.. (2002). Comprehensive model of electron energy deposition. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(6). 2666–2671. 21 indexed citations
18.
Han, Geng, et al.. (2001). Can proximity x-ray lithography print 35 nm features? Yes. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 19(6). 2423–2427. 12 indexed citations
19.
Han, Geng & F. Cerrina. (2000). Energy transfer between electrons and photoresist: Its relation to resolution. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(6). 3297–3302. 13 indexed citations
20.
Han, Geng, et al.. (1999). Extension of x-ray lithography to 50 nm with a harder spectrum. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(6). 3426–3432. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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