T. Eimori

701 total citations
54 papers, 478 citations indexed

About

T. Eimori is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanics of Materials. According to data from OpenAlex, T. Eimori has authored 54 papers receiving a total of 478 indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 4 papers in Mechanics of Materials. Recurrent topics in T. Eimori's work include Semiconductor materials and devices (48 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Integrated Circuits and Semiconductor Failure Analysis (24 papers). T. Eimori is often cited by papers focused on Semiconductor materials and devices (48 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Integrated Circuits and Semiconductor Failure Analysis (24 papers). T. Eimori collaborates with scholars based in Japan, United States and Germany. T. Eimori's co-authors include O. Tsuchiya, K. Sonoda, Kiyoshi Ishikawa, R. F. W. Pease, H. Oda, R. Browning, Yuzuru Ohji, Taro Uchida, Hiroaki Morimoto and Yuichi Inoue and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

T. Eimori

47 papers receiving 447 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Eimori Japan 11 447 43 42 41 40 54 478
Kwyro Lee South Korea 8 280 0.6× 110 2.6× 32 0.8× 38 0.9× 67 1.7× 14 371
Mark N. Ruberto United States 11 418 0.9× 42 1.0× 18 0.4× 82 2.0× 77 1.9× 23 458
Eugene Delenia United States 9 157 0.4× 31 0.7× 18 0.4× 98 2.4× 81 2.0× 13 248
A.T. Wu United States 13 417 0.9× 27 0.6× 10 0.2× 104 2.5× 48 1.2× 28 434
A. Chou United States 11 657 1.5× 71 1.7× 8 0.2× 80 2.0× 114 2.9× 24 684
M. Narihiro Japan 10 405 0.9× 58 1.3× 9 0.2× 133 3.2× 61 1.5× 32 447
Jongho Oh South Korea 7 287 0.6× 21 0.5× 46 1.1× 59 1.4× 158 4.0× 16 333
T. Ohzone Japan 14 619 1.4× 100 2.3× 12 0.3× 104 2.5× 133 3.3× 101 647
K.F. Schuegraf United States 8 827 1.9× 37 0.9× 8 0.2× 91 2.2× 197 4.9× 11 858
Hiroaki Arimura Belgium 15 620 1.4× 95 2.2× 7 0.2× 82 2.0× 95 2.4× 96 651

Countries citing papers authored by T. Eimori

Since Specialization
Citations

This map shows the geographic impact of T. Eimori's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Eimori with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Eimori more than expected).

Fields of papers citing papers by T. Eimori

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Eimori. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Eimori. The network helps show where T. Eimori may publish in the future.

Co-authorship network of co-authors of T. Eimori

This figure shows the co-authorship network connecting the top 25 collaborators of T. Eimori. A scholar is included among the top collaborators of T. Eimori based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Eimori. T. Eimori is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Matsuki, Takeo, Satoshi Kamiyama, Toshihide Nabatame, et al.. (2009). Improvement of Device Characteristics for TiN Gate p-Type Metal–Insulator–Semiconductor Field-Effect Transistor with Al2O3-Capped HfO2 Dielectrics by Controlling Al2O3 Diffusion Annealing Process. Japanese Journal of Applied Physics. 48(4S). 04C010–04C010. 3 indexed citations
2.
Shinohara, Hisanori, Masaki Hayashi, Y. Sugita, et al.. (2009). Effect of Post Cap-Layer Deposition Annealing Temperature and TiN Thickness on SMDH CMOS Process using TiN Hard Mask. 1 indexed citations
3.
Morooka, T., T. Eimori, Teruo Ono, et al.. (2008). Proposal of Single Metal/Dual High-$k$ Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control. IEEE Transactions on Electron Devices. 56(1). 85–92. 4 indexed citations
4.
Sato, Motoyuki, Naoto Umezawa, Satoshi Kamiyama, et al.. (2008). Physical understanding of the reliability improvement of dual high-k CMOSFETs with the fifth element incorporation into HfSiON gate dielectrics. 47. 66–67. 10 indexed citations
5.
Nara, Yasuo, Masaru Kadoshima, Satoshi Kamiyama, et al.. (2008). Practical Gate-First Metal Gate/Dual High-k CMOS Integration with Low Threshold Voltages. ECS Transactions. 13(2). 209–218. 2 indexed citations
6.
Sato, Motoyuki, Naoto Umezawa, Hiroaki Arimura, et al.. (2008). Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects. 1–4. 16 indexed citations
7.
Nakata, Hiroyuki, et al.. (2008). Ultralow-Thermal-Budget CMOS Process Using Flash-Lamp Annealing for 45 nm Metal/High- $k$ FETs. IEEE Transactions on Electron Devices. 55(4). 1042–1049. 13 indexed citations
8.
Matsuki, Takeo, T. Eimori, Yasuo Nara, et al.. (2007). Impact of High Temperature Annealing on Traps in Physical-Vapor-Deposited-TiN/SiO2/Si Analyzed by Positron Annihilation. Japanese Journal of Applied Physics. 46(12L). L1219–L1219. 7 indexed citations
9.
Matsuki, Takeo, et al.. (2007). Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics. 46(4S). 1921–1921. 4 indexed citations
10.
Matsuki, Takeo, et al.. (2007). Impact of Gate Metal-Induced Stress on Performance Modulation in Gate-Last Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics. 46(5S). 3181–3181. 7 indexed citations
11.
Yamashita, T., Masami Mizutani, Masashi Inoue, et al.. (2006). Performance Enhancement in 45-nm Ni Fully-Silicided Gate/High-k CMIS Using Substrate Ion Implantation. 172–173. 1 indexed citations
12.
13.
Ota, K., Kenya Sugihara, Taro Uchida, et al.. (2003). Novel locally strained channel technique for high performance 55nm CMOS. 27–30. 67 indexed citations
14.
Ohno, Yutaka, Tsuyoshi Horikawa, Takeharu Kuroiwa, et al.. (2002). A memory cell capacitor with Ba/sub x/Sr/sub 1-x/TiO/sub 3/ (BST) film for advanced DRAMs. 149–150.
15.
Eimori, T., T. Oashi, Fukashi Morishita, et al.. (1998). Approaches to extra low voltage DRAM operation by SOI-DRAM. IEEE Transactions on Electron Devices. 45(5). 1000–1009. 15 indexed citations
16.
Oashi, T., Yutaro Yamaguchi, T. Eimori, et al.. (1997). A 1-V 46-ns 16-Mb SOI-DRAM with body control technique. IEEE Journal of Solid-State Circuits. 32(11). 1712–1720. 12 indexed citations
17.
Ohno, Yutaka, et al.. (1993). The Disk Shape Stacked Capacitor Cell for 256Mb DRAM. 1 indexed citations
18.
Frank, C. W., et al.. (1989). Ultrathin poly(methylmethacrylate) resist films for microlithography. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(6). 1745–1750. 32 indexed citations
19.
20.
Satoh, S., et al.. (1985). Hot Electron Improvement in MOS RAM's Based on Epitaxial Substrate. Japanese Journal of Applied Physics. 24(3A). L184–L184. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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