B. Höfflinger

593 total citations
52 papers, 391 citations indexed

About

B. Höfflinger is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, B. Höfflinger has authored 52 papers receiving a total of 391 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 10 papers in Biomedical Engineering and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in B. Höfflinger's work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers) and Advancements in Photolithography Techniques (7 papers). B. Höfflinger is often cited by papers focused on Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers) and Advancements in Photolithography Techniques (7 papers). B. Höfflinger collaborates with scholars based in Germany, United States and France. B. Höfflinger's co-authors include Heinz‐Gerd Graf, Christine Harendt, G.W. Neudeck, Jochen Friedrich, M. Schubert, Lambert Spaanenburg, J.A.G. Nijhuis, Florian Letzkus, André van Schaik and Christian Reuter and has published in prestigious journals such as Proceedings of the IEEE, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

B. Höfflinger

48 papers receiving 365 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Höfflinger Germany 12 345 95 48 23 17 52 391
Jongsoo Lee South Korea 12 396 1.1× 112 1.2× 26 0.5× 9 0.4× 11 0.6× 45 473
Michał Rakowski Belgium 16 712 2.1× 100 1.1× 149 3.1× 70 3.0× 31 1.8× 57 752
Michael W. Haney United States 16 764 2.2× 138 1.5× 175 3.6× 18 0.8× 28 1.6× 107 868
Michael J. Hill United States 14 664 1.9× 90 0.9× 33 0.7× 13 0.6× 14 0.8× 36 729
Jeongho Yeo South Korea 9 253 0.7× 65 0.7× 18 0.4× 8 0.3× 11 0.6× 44 290
Juho Park South Korea 12 241 0.7× 56 0.6× 54 1.1× 41 1.8× 19 1.1× 30 353
Odysseas Zografos Belgium 14 456 1.3× 54 0.6× 160 3.3× 25 1.1× 41 2.4× 63 554
A.B. Bhattacharyya India 12 384 1.1× 75 0.8× 68 1.4× 10 0.4× 74 4.4× 86 460
A. Kornfeld Israel 9 551 1.6× 109 1.1× 93 1.9× 31 1.3× 33 1.9× 12 612

Countries citing papers authored by B. Höfflinger

Since Specialization
Citations

This map shows the geographic impact of B. Höfflinger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Höfflinger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Höfflinger more than expected).

Fields of papers citing papers by B. Höfflinger

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Höfflinger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Höfflinger. The network helps show where B. Höfflinger may publish in the future.

Co-authorship network of co-authors of B. Höfflinger

This figure shows the co-authorship network connecting the top 25 collaborators of B. Höfflinger. A scholar is included among the top collaborators of B. Höfflinger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Höfflinger. B. Höfflinger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pons, P., et al.. (2005). Capacitive Pressure Sensor Mock-up Without Compensation Circuits. Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95. 1. 628–631.
2.
Höfflinger, B., et al.. (2003). Stacked CMOS inverter with symmetric device performance. sc 17. 909–911. 1 indexed citations
3.
Höfflinger, B., et al.. (2003). Dual-gate SOI CMOS technology by local overgrowth (LOG). 74. 134–135.
4.
Harendt, Christine, et al.. (2002). Wafer bonding for intelligent power ICs: integration of vertical structures. 93 1. 152–153. 2 indexed citations
5.
Nijhuis, J.A.G., et al.. (2002). A VLSI implementation of a neural car collision avoidance controller. i. 493–499. 2 indexed citations
6.
Höfflinger, B., et al.. (1996). TSI Process Using Vapor-Applied Crosslinking Silylating Agents for Realizing sub-Quarter Micron Resolution.. Journal of Photopolymer Science and Technology. 9(3). 497–508. 4 indexed citations
7.
Höfflinger, B., et al.. (1996). Realisation of irregular quarter-micron patterns in thick resists using an advanced e-beam sensitive TSI process. Microelectronic Engineering. 30(1-4). 301–304. 2 indexed citations
8.
Höfflinger, B., et al.. (1996). Parallel digital neural hardware for controller design. Mathematics and Computers in Simulation. 41(1-2). 149–160. 2 indexed citations
9.
Nagel, N., et al.. (1992). First MOS transistors on insulator by silicon saturated liquid solution epitaxy. IEEE Electron Device Letters. 13(5). 294–296. 6 indexed citations
10.
Harendt, Christine, et al.. (1992). Silicon fusion bonding and its characterization. Journal of Micromechanics and Microengineering. 2(3). 113–116. 49 indexed citations
11.
Graf, Heinz‐Gerd, et al.. (1992). A smart power process in “direct-bonded” silicon on insulator with 150 V VDMOS, CMOS and bipolar transistors. Microelectronic Engineering. 19(1-4). 153–156. 2 indexed citations
12.
Schubert, M., et al.. (1991). 1D modeling of SOI MOSFETs using distinct quasi-fermi potentials. Microelectronic Engineering. 15(1-4). 237–240. 3 indexed citations
13.
Harendt, Christine, et al.. (1991). Wafer fusion bonding and its application to silicon-on-insulator fabrication. Journal of Micromechanics and Microengineering. 1(3). 145–151. 16 indexed citations
14.
Höfflinger, B., et al.. (1990). Integrated Electronics for Automotive Applications in the EUREKA Program PROMETHEUS. European Solid-State Circuits Conference. 2. 13–17. 4 indexed citations
15.
Schubert, M., et al.. (1990). A new analytical charge model for the dual-gate controlled thin-film SOI MOSFET. Superlattices and Microstructures. 7(4). 323–326. 2 indexed citations
16.
Harendt, Christine, et al.. (1990). Silicon direct bonding for sensor applications: Characterization of the bond quality. Sensors and Actuators A Physical. 25(1-3). 87–92. 11 indexed citations
17.
Harendt, Christine, et al.. (1989). Silicon‐on‐Insulator Films Obtained by Etchback of Bonded Wafers. Journal of The Electrochemical Society. 136(11). 3547–3548. 10 indexed citations
18.
Fettweis, Alfred, et al.. (1982). VIS-SC-filters with reduced influences of parasitic capacitances. IEE Proceedings G (Electronic Circuits and Systems). 129(2). 29–29. 3 indexed citations
19.
Höfflinger, B.. (1965). Ein vorschlag zur verstärkung von plasmawellen in festkörpern mit massenanisotropie. Solid-State Electronics. 8(12). 907–912. 1 indexed citations
20.
Höfflinger, B. & J. Voitländer. (1963). Eine Berechnung der Feldgradienten am Ort der Fe- und Co-Kerne in Fe(C5H5)2 und [Co(C5H5)2]+. Zeitschrift für Naturforschung A. 18(11). 1185–1190. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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