Y. T. Moon

646 total citations
30 papers, 544 citations indexed

About

Y. T. Moon is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Y. T. Moon has authored 30 papers receiving a total of 544 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Condensed Matter Physics, 19 papers in Electronic, Optical and Magnetic Materials and 15 papers in Electrical and Electronic Engineering. Recurrent topics in Y. T. Moon's work include GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (18 papers) and ZnO doping and properties (14 papers). Y. T. Moon is often cited by papers focused on GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (18 papers) and ZnO doping and properties (14 papers). Y. T. Moon collaborates with scholars based in United States, South Korea and Türkiye. Y. T. Moon's co-authors include H. Morkoç̌, Y. Fu, X. Ni, Necmi Bıyıklı, Feng Yun, M. A. Reshchikov, C. Liu, T. S. Kuan, C. K. Inoki and S. Doğan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Y. T. Moon

29 papers receiving 526 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Y. T. Moon United States 14 416 338 280 183 101 30 544
K. Y. Lim South Korea 13 417 1.0× 268 0.8× 252 0.9× 216 1.2× 146 1.4× 44 555
S. K. Lee South Korea 10 504 1.2× 241 0.7× 270 1.0× 251 1.4× 144 1.4× 13 552
W. Imler United States 7 529 1.3× 208 0.6× 242 0.9× 312 1.7× 186 1.8× 10 596
M. W. Leksono United States 9 407 1.0× 200 0.6× 186 0.7× 265 1.4× 121 1.2× 16 492
C. Q. Chen United States 7 544 1.3× 276 0.8× 308 1.1× 160 0.9× 109 1.1× 11 566
Hiroya Kimura Japan 5 429 1.0× 209 0.6× 232 0.8× 164 0.9× 135 1.3× 6 459
F. Hamdani France 11 256 0.6× 303 0.9× 178 0.6× 217 1.2× 159 1.6× 19 463
Z. L. Miao China 8 440 1.1× 272 0.8× 261 0.9× 183 1.0× 73 0.7× 15 502
A. Azizur Rahman India 14 464 1.1× 292 0.9× 277 1.0× 294 1.6× 106 1.0× 33 620
S. Fritze Germany 8 372 0.9× 222 0.7× 227 0.8× 220 1.2× 127 1.3× 10 476

Countries citing papers authored by Y. T. Moon

Since Specialization
Citations

This map shows the geographic impact of Y. T. Moon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. T. Moon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. T. Moon more than expected).

Fields of papers citing papers by Y. T. Moon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. T. Moon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. T. Moon. The network helps show where Y. T. Moon may publish in the future.

Co-authorship network of co-authors of Y. T. Moon

This figure shows the co-authorship network connecting the top 25 collaborators of Y. T. Moon. A scholar is included among the top collaborators of Y. T. Moon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. T. Moon. Y. T. Moon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Hyoung-Jun, Y. T. Moon, & Chulhun Seo. (2013). A Study on Improved Isolation of Indoor Repeating Antenna using Metamaterial Absorber for WCDMA System. Journal of Electrical Engineering and Technology. 8(4). 850–855. 1 indexed citations
2.
Alivov, Ya. I., Ümit Özgür, Xing Gu, et al.. (2007). Hybrid II-VI and III-V Compound Double Heterostructures and Their Properties. Journal of Electronic Materials. 36(4). 409–413. 3 indexed citations
3.
Reshchikov, M. A., Y. T. Moon, Xing Gu, et al.. (2006). Unstable luminescence in GaN and ZnO. Physica B Condensed Matter. 376-377. 715–718. 21 indexed citations
4.
Kauser, M. Z., P. P. Ruden, Jinqiao Xie, et al.. (2006). Effect of hydrostatic pressure on the current-voltage characteristics of GaN∕AlGaN∕GaN heterostructure devices. Journal of Applied Physics. 99(11). 16 indexed citations
5.
Fu, Y., Feng Yun, Y. T. Moon, et al.. (2006). Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy. Journal of Applied Physics. 99(3). 16 indexed citations
6.
Bıyıklı, Necmi, Jinqiao Xie, Y. T. Moon, et al.. (2006). Quantitative mobility spectrum analysis of AlGaN∕GaN heterostructures using variable-field hall measurements. Applied Physics Letters. 88(14). 15 indexed citations
7.
Ni, X., Y. Fu, Y. T. Moon, Necmi Bıyıklı, & H. Morkoç̌. (2006). Optimization of a-plane GaN growth by MOCVD on r-plane sapphire. Journal of Crystal Growth. 290(1). 166–170. 120 indexed citations
8.
Moon, Y. T., Jinqiao Xie, C. Liu, et al.. (2006). A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers. Journal of Crystal Growth. 291(1). 301–308. 11 indexed citations
9.
Feenstra, R. M., C. K. Inoki, T. S. Kuan, et al.. (2005). Dislocation density reduction in GaN using porous SiN interlayers. physica status solidi (a). 202(5). 722–726. 27 indexed citations
10.
Fu, Y., Y. T. Moon, Feng Yun, et al.. (2005). Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy. Applied Physics Letters. 86(4). 43108–43108. 47 indexed citations
11.
Johnstone, D., et al.. (2005). Comparison of deep levels in GaN grown by MBE, MOCVD, and HVPE. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5739. 7–7. 12 indexed citations
12.
Tsen, K. T., D. K. Ferry, H. J. Lü, et al.. (2005). Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors. Superlattices and Microstructures. 38(2). 77–114. 13 indexed citations
13.
Reshchikov, M. A., Jiulong Xie, Lei He, et al.. (2005). Effect of potential fluctuations on photoluminescence in Mg‐doped GaN. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2761–2764. 12 indexed citations
14.
Liu, C., Bo Xiao, Feng Yun, et al.. (2005). Effect of N doping on magnetic properties of (Zn, Mn)O thin films deposited by radio frequency magnetron sputtering. Superlattices and Microstructures. 39(1-4). 124–129. 6 indexed citations
15.
Alivov, Ya. I., Ümit Özgür, C. Liu, et al.. (2005). Forward-current electroluminescence from GaN/ZnO double heterostructure diode. Solid-State Electronics. 49(10). 1693–1696. 21 indexed citations
16.
Ruterana, P., et al.. (2005). A TEM study of ZnO layers deposited by MBE and RF magnetron sputtering. Superlattices and Microstructures. 39(1-4). 387–394. 11 indexed citations
17.
Yun, Feng, S. Doğan, Y. T. Moon, et al.. (2005). Characterization of MOCVD grown GaN on porous SiC templates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2087–2090. 6 indexed citations
18.
Lee, Jong‐Hyeon, et al.. (2004). Properties of various ion-implanted sapphire substrates for GaN epilayers. physica status solidi (a). 201(12). 2791–2794. 1 indexed citations
19.
Moon, Y. T., et al.. (2003). Growth-temperature dependent property of GaN barrier layer and its effect on InGaN/GaN multiple quantum well light-emitting diodes. Journal of the Korean Physical Society. 42(4). 557–561. 3 indexed citations
20.
Jang, Hanbyeol, et al.. (2002). Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering. Applied Physics Letters. 81(27). 5120–5122. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by K. Y. Lim Breakdown of academic impact, for papers by S. K. Lee Breakdown of academic impact, for papers by W. Imler Breakdown of academic impact, for papers by M. W. Leksono Breakdown of academic impact, for papers by C. Q. Chen Breakdown of academic impact, for papers by Hiroya Kimura Breakdown of academic impact, for papers by F. Hamdani Breakdown of academic impact, for papers by Z. L. Miao Breakdown of academic impact, for papers by A. Azizur Rahman Breakdown of academic impact, for papers by S. Fritze
Rankless by CCL
2026