Feng Yun
- Materials Chemistry top 5%
- Condensed Matter Physics top 1%
- Electronic, Optical and Magnetic Materials top 2%
- Electrical and Electronic Engineering top 5%
- Atomic and Molecular Physics, and Optics top 5%
- Topics
- GaN-based semiconductor devices and materials (101 papers)ZnO doping and properties (57 papers)Ga2O3 and related materials (54 papers)
- Partner nations
- ChinaUnited StatesUnited Kingdom
In The Last Decade
Feng Yun
140 papers receiving 2.6k citations
Hit Papers
Peers
Comparison fields: 5 of 80
- Materials Chemistry 1.5k
- Condensed Matter Physics 1.5k
- Electronic, Optical and Magnetic Materials 1.1k
- Electrical and Electronic Engineering 1.1k
- Atomic and Molecular Physics, and Optics 521
Countries citing papers authored by Feng Yun
This map shows the geographic impact of Feng Yun's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Feng Yun with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Feng Yun more than expected).
Fields of papers citing papers by Feng Yun
This network shows the impact of papers produced by Feng Yun. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Feng Yun. The network helps show where Feng Yun may publish in the future.
Co-authorship network of co-authors of Feng Yun
This figure shows the co-authorship network connecting the top 25 collaborators of Feng Yun. A scholar is included among the top collaborators of Feng Yun based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Feng Yun. Feng Yun is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 1 | |
| 2 | 0 | |
| 3 | 1 | |
| 4 | 5 | |
| 5 | 3 | |
| 6 | 0 | |
| 7 | 5 | |
| 8 | 4 | |
| 9 | 1 | |
| 10 | 2 | |
| 11 | 9 | |
| 12 | 2 | |
| 13 | 5 | |
| 14 | 6 | |
| 15 | 3 | |
| 16 | 9 | |
| 17 | 8 | |
| 18 | 9 | |
| 19 | 1 | |
| 20 | 73 |
About Feng Yun
Feng Yun is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 149 papers that have together received 2.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (101 papers), ZnO doping and properties (57 papers) and Ga2O3 and related materials (54 papers). The work is most often cited by research in Condensed Matter Physics (1.5k citations), Electronic, Optical and Magnetic Materials (1.1k citations) and Materials Chemistry (1.5k citations). Feng Yun has collaborated with scholars based in China, United States and United Kingdom. Frequent co-authors include H. Morkoç̌, C. Liu, M. A. Reshchikov, Paolo Visconti, H. Morkoç, Daming Huang, Lei He, Thomas J. King, Qiang Li and A. A. Baski. Their work appears in journals such as Physical Review Letters, Nano Letters and Applied Physics Letters.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.