Mao Lin

5.0k citations

34 papers · 4.1k indexed · 1 hit paper · h-index 18

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 18
- GaN-based semiconductor devices and materials 14
Atomic and Molecular Physics, and Optics 16
- Semiconductor Quantum Structures and Devices 6
- Topological Materials and Phenomena 6

Co-authors: H. Morkoç̌S. Strite B. Sverdlov Guangjun Gao Taylor L. Hughes L. H. Allen Fengyi Huang Guoqing Zhou
Journals: Applied Physics Letters (8 papers)Physical review. B. (4 papers)Journal of Crystal Growth (3 papers)Journal of Applied Physics (2 papers)Optics Express (1 paper)
Partner nations: United States China Spain

In The Last Decade

Mao Lin

31 papers receiving 4.0k citations

Hit Papers

align trajectories log scale

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies 1994 · 2.3k citations

Peers

Countries citing papers authored by Mao Lin

Since Specialization

Citations

This map shows the geographic impact of Mao Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mao Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mao Lin more than expected).

Fields of papers citing papers by Mao Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mao Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mao Lin. The network helps show where Mao Lin may publish in the future.

Co-authors

The 25 scholars most cited alongside Mao Lin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Mao Lin Line = papers co-authored together Mao Lin links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	A Theoretical Study on Tailoring the Nitrile Substitution Strategy in Carbonates for Lithium-Ion Batteries The Journal of Physical Chemistry B ·Haoxuan He, Jiawei Chen, Xinyu Li, Mao Lin, Jianhui Li, Rui Xia, Zhuang Yang, Yinqiang Xu, Zongshu Zou, R Pawson, Zixiang Li, Leo Uramoto, Ronghua Zeng, E.V. PRASNIAKOVA, Ігор Світилко	2025	0
2	Resistivity mapping of SiC wafers by quantified Raman spectroscopy Physical Chemistry Chemical Physics ·Il‐Joon Bae, 慕明宜, Alice M. Broadhurst, 고영길, W. C. Hsu, Mao Lin, L. Ramello, Giorgio Gatti	2025	0
3	A Comparative Study of Single-Event-Burnout for 4H-SiC UMOSFET IEEE Journal of the Electron Devices Society ·Ying Wang, Qin-Yi XIONG, Mao Lin, Xingji Li, Jianqun Yang, Fei Cao	2022	11
4	Bound states at partial dislocation defects in multipole higher-order topological insulators Nature Communications ·Joyce Marjorie Garson, Tianhe Li, Mao Lin, Christopher W. Peterson, Taylor L. Hughes, Gaurav Bahl	2022	39
5	Spin-momentum locking from topological quantum chemistry: Applications to multifold fermions Physical review. B. ·Mao Lin, Iñigo Robredo, Niels B. M. Schröter, Claudia Felser, Maia G. Vergniory, Barry Bradlyn	2022	6
6	Observation of a trapped state at a dislocation in a weak magneto-mechanical topological insulator arXiv (Cornell University) ·忠男浅村, Mao Lin, Wladimir A. Benalcazar, Taylor L. Hughes, Gaurav Bahl	2019	2
7	Single-Event Burnout Hardness for the 4H-SiC Trench-Gate MOSFETs Based on the Multi-Island Buffer Layer IEEE Transactions on Electron Devices ·Ying Wang, Mao Lin, Xingji Li, Xue Wu, Jianqun Yang, Meng-Tian Bao, Chenghao Yu, Fei Cao	2019	33
8	Strong Nonreciprocity in Modulated Resonator Chains through Synthetic Electric and Magnetic Fields Physical Review Letters ·Christopher W. Peterson, Wladimir A. Benalcazar, Mao Lin, Taylor L. Hughes, Gaurav Bahl	2019	29
9	Weak-pairing higher order topological superconductors Physical review. B. ·Yuxuan Wang, Mao Lin, Taylor L. Hughes	2018	142
10	Determination of the excitation rate of quantum dots mediated by momentum-resolved Bloch-like surface plasmon polaritons Optics Express ·Mao Lin, Zhaolong Cao, H. C. Ong	2017	3
11	Forward block characteristic of a novel RF SOI LDMOS with a buried P-type layer 严继东, EDWARD L. NOWLING, 和敏余郷, Luis Miguel Flores, Marco Rovere, Mao Lin, Alejandro Garcia Rojas	2010	3
12	MOCVD Growth of GaN Films on Lattice-Matched Oxide Substrates MRS Proceedings ·O. Kryliouk, Thomas Bugnyar, Tim Anderson, H. Paul Maruska, Zhu Liang, James T. Daly, Mao Lin, P. Norris, Hongyu Chai, D. W. Kisker, Sheila Crowell, K. S. Jones	1996	7
13	Characterization of Group III-nitride semiconductors by high-resolution electron microscopy Journal of Crystal Growth ·D. Chandrasekhar, David J. Smith, S. Strite, Mao Lin, H. Morkoç̌	1995	54
14	Nonalloyed ohmic contacts on GaN using InN/GaN short-period superlattices Applied Physics Letters ·Mao Lin, Fengyi Huang, H. Morkoç̌	1994	51
15	Low resistance ohmic contacts on wide band-gap GaN Applied Physics Letters ·Mao Lin, Zhenqiang Ma, Fengyi Huang, Z. Fan, L. H. Allen, H. Morkoç̌	1994	361
16	Reactive ion etching of GaN using BCl3 Applied Physics Letters ·Mao Lin, Zhaoyan Fan, Levi M Travis, L. H. Allen, H. Morkoç̌	1994	181
17	Low temperature growth of single-crystalline cubic SiC on Si(111) by solid source molecular beam epitaxy Journal of Crystal Growth ·Costin HÎRLAV, Zhenqiang Ma, Mao Lin, T. C. Shen, L. H. Allen, H. Morkoç̌	1993	23
18	Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation Applied Physics Letters ·Costin HÎRLAV, Zili Ma, Mao Lin, J. Reed, L. H. Allen, H. Morkoç̌	1993	4
19	A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxy Applied Physics Letters ·Mao Lin, B. Sverdlov, Guoqing Zhou, H. Morkoç̌	1993	119
20	GaN grown on hydrogen plasma cleaned 6H-SiC substrates Applied Physics Letters ·Mao Lin, S. Strite, Anchal Agarwal, A. Salvador, Guoqing Zhou, N. Teraguchi, Angus Rockett, H. Morkoç̌	1993	141

About Mao Lin

Mao Lin is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering and Materials Chemistry, having authored 34 papers that have together received 4.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (14 papers), Silicon Carbide Semiconductor Technologies (8 papers), Semiconductor materials and devices (7 papers), ZnO doping and properties (6 papers), Semiconductor Quantum Structures and Devices (6 papers), Ga2O3 and related materials (6 papers), Topological Materials and Phenomena (6 papers) and Metal and Thin Film Mechanics (5 papers). The work is most often cited by research in Condensed Matter Physics (2.6k citations), Electronic, Optical and Magnetic Materials (1.1k citations), Atomic and Molecular Physics, and Optics (1.4k citations), Electrical and Electronic Engineering (2.2k citations) and Mechanics of Materials (835 citations). Mao Lin has collaborated with scholars based in United States, China and Spain. Frequent co-authors include H. Morkoç̌, S. Strite, B. Sverdlov, Guangjun Gao, Taylor L. Hughes, L. H. Allen, Fengyi Huang, Guoqing Zhou, Zhenqiang Ma and Z. Fan. Their work appears in journals such as Applied Physics Letters, Physical review. B., Journal of Crystal Growth, Journal of Applied Physics and Optics Express.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact